A numerical method for the calculation of the three-dimensional wake rollup behind symmetric wings with ground effect and its aerodynamic characteristics for steady low subsonic flow have been developed. A non-planar quadrilateral vortex-ring method with vortex wake relaxation iterative scheme for lifting surfaces is obtained. A computer program was build to treat wings with breaks, span wise trailing edge flaps, local dihedral angle, camber, twist and ground effect. Forces and moments are obtained from vector product of local velocity and vortex strength multiplied by density. The program has been validated for a number of configurations for which experimental data is available. Good agreement has been obtained for these configurations. Also many results obtained for different cases of wing with different shapes parameters.
Light naphtha treatment was achieved over 0.3wt%Pt loaded-alumina, HY-zeolite and Zr/W/HY-zeolite catalysts at temperature rang of 240-370°C, hydrogen to hydrocarbon mole ratio of 1-4 0.75-3 wt/wt/hr, liquid hourly space velocity (LHSV) and at atmospheric pressure. The hydroconversion of light naphtha over Pt loaded catalyst shows two main reactions; hydrocracking and hydroisomerization reactions. The catalytic conversion of a light naphtha is greatly influenced by reaction temperature, LHSV, and catalyst function. Naphtha transformation (hyroisomerization, cracking and aromatization) increases with decreasing LHSV and increasing temperature except hydroisomerization activity increases with increasing of temperature till 300°C then began
... Show MoreIn this paper, Pentacene based-organic field effect transistors (OFETs) by using different layers (monolayer, bilayer and trilayer) for three different gate insulators (ZrO2, PVA and CYEPL) were studied its current–voltage (I-V) characteristics by using the gradual-channel approximation model. The device exhibits a typical output curve of a field-effect transistor (FET). Source-drain voltage (Vds) was also investigated to study the effects of gate dielectric on electrical performance for OFET. The effect of capacitance semiconductor in performance OFETs was considered. The values of current and transconductance which calculated using MATLAB simulation. It exhibited a value of current increase with increasing source-drain voltage.