The substrate's nature plays an important role in the characteristics of semiconductor films because of the thermal and lattice mismatching between the film and the substrate. In this study, tin sulfide (SnS) nanostructured thin films were grown on different substrates (polyester, glass, and silicon) using a simple and low-cost chemical bath deposition technique. The structural, morphological, and optical properties of the grown thin films were investigated using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and ultraviolet-visible-near infrared (UV-Vis-NIR) spectroscopy. The XRD and FESEM results of the prepared films revealed that each film is polycrystalline and exhibits both orthorhombic and cubic stru

One of the major problems facing the road construction engineer is the collapsible granular soil which may be used for embankment construction. Problems appears when such compacted soil come in touch with water, it exhibits cracking and uncontrolled settlement. Collapsible soils are defined as any unsaturated soil that goes through a radical rearrangement of practice and great loss of volume upon wetting, with or without additional loading. An attempt has been made in this investigation to stabilize the collapsible soil of Nasiriya with asphalt emulsion. Specimens of pure and asphalt emulsion stabilized soil have been prepared using optimum fluid content and tested. The first group of specimens of (60x60x20) cm have been tested for direct s

 Eight soil samples were selected around Najaf governorate at depth levels 40-50 cm. X-Ray Fluorescence (XRF) was used to determine the concentrations of major and trace elements. Liner and mass attenuation coefficient (µ, µ_ρ) have been determined at gamma energies (662, 1172,1332) keV using NaI (Tl) detector. The range of linear attenuation coefficients for calculated samples were (0.553-1.163) cm^-1, (0.122-0.178) cm^-1 and (0.049-0.105) cm^-1 at (662, 1172,1332) keV respectively. The range of mass attenuation coefficients obtained (0.39-0.76) cm²/gm, (0.087-0.117) cm²/gm and (0.0336-0.074) cm²/gm at (662, 1172,1332) keV respectively. The result

Surge pressure is supplemental pressure because of the movement of the pipes downward and the swab pressure is the pressure reduction as a result of the drill string's upward movement. Bottom hole pressure is reduced because of swabbing influence. An Investigation showed that the surge pressure has great importance for the circulation loss problem produced by unstable processes in the management pressure drilling (MPD) actions. Through Trip Margin there is an increase in the hydrostatic pressure of mud that compensates for the reduction of bottom pressure due to stop pumping and/or swabbing effect while pulling the pipe out of the hole. This overview shows suggested mathematical/numerical models for simulating surge pressure problems ins

The study aims to identify the theoretical literature for all the variables of the study (ICT, GDP) as well as to identify the practical side of the impact of ICT on the per capita GDP in Iraq for the period (2004-2021). The study was based on the hypothesis that ICT impacts per capita GDP in Iraq. The problem of the study was to answer the question: does ICT contribute to per capita GDP? The study concluded that an increase in the rate of internet users per 100 people by one unit would increase. Increasing the landline telephone rate per 100 people by one unit will increase GDP per capita. In addition, increasing the mobile phone rate per 100 people by one unit will increase GDP per capita. The study recommended adopting rational poli

 In this research , pure Cadmium Oxide thin films were prepared by  thermal  evaporation Under  vacuum  method , where  pure cadmium  metal was  deposited on  glass  Substrate in Room temperature (300K) at thickness (400 ± 30) nm with Deposition rate(1.1 ± 0.1) nm/sec   And  then  we  oxidize a pure  cadmium  Film  in Temperature ( 350ºC ) for  one  hour  with existence air flow.       This  research  contained  study of   the  influence  of  doping  process  by  Tin metal (Sn) with two different  ratios (1,3) %  at  substrate temperature (473K ) on th