Background: Acrylic resin polymer s used in prosthodontic treatment as a denture base material for several decades. Separation and debonding of artificial teeth from denture bases present a laboratory and clinical problem affect patient and dentist. The aim of this study is to evaluate the effect of oxygen plasma and argon plasma treatment of acrylic teeth and thermocycling on bonding strength to hot cured acrylic resin denture base material. Materials and Methods: Sixty denture teeth (right maxillary central incisor) are selected. The denture teeth are waxed onto the beveled surface of rectangular wax block according to Japanese standard for artificial teeth. The control group consisted of 20 denture teeth specimen without any treatment.

The structural, optical and photoelectrical properties of fabricated diffusion heterojunction (HJ) solar cell, from n-type c-Si wafer of [400] direction with Boron, has been studied. AgAl alloys was used because of its properties that affect as a good connection materials. TiO2 has been used as a reflecting layer to increase the absorption radiation. The HJ has direct allowed energy gap equal to 3.1 eV. The c-Si/B HJ solar cell yielded has an active area conversion efficiency of 16.4% with an open circuit voltage of (Voc) 0.592V, short circuit current (Isc) of 2.042mA, fill factor (F.F) of 0.682 and % =10.54.

Fabrication of solar cell prepared by thermal spray and vacuum thermal evaporation method on silicon wafer(n-type) and studying its efficiency. The film have been deposited on three layers(ZnO then CdS and CdTe) on Si and glass respectively.Direct energy gap was calculated and equal to (4.3,3.4,3)eV and indirect energy gap equal to (3.5,2.5,1.5)eV respectively . Efficiency was calculated for the cell of area 2cm2 it was equal to 0.14%.

Abstract. Silver, Indium Selenium thin film with a thickness (5001±30) nm, deposited by thermal evaporation methods at RT and annealing3temperature (Ta=400, 500 and 600) K on a substrate of glass to study structural and optical properties of thin films and on p-Si wafer to fabricate the AgInSe2/p-Si heterojunction solar cell. XRD analysis shows that the AgInSe2 (AIS) deposited film at RT and annealing3temperature (Ta=400, 500 and 600) K have polycrystalline structure. The average grain size has been estimated from AFM images. The energy gap was estimated from the optical transmittance using a spectrometer type (UV.-Visible 1800 spectra photometer). From I-V characterization , the photovoltaic parameters such as, open-circuit voltage, short

In this work preparation of antireflection coating with single layer of MgO using pulsed laser deposition (PLD) method which deposit on glass substrate with different thicknesses (90 and 100) nm annealed at temperature 500 K was done.
The optical and structural properties (X-ray diffraction) have been determined. The optical reflectance was computed with the aid of MATLAB over the visible and near infrared region. Results shows that the best result obtained for optical performance of AR'Cs at 700 shots with thickness 90 nm nanostructure single layer AR'Cs and low reflection at wavelength 550 nm.

Dentures that are not cleaning and maintained properly may prone to contamination by different microbial pathogens that result in several oral conditions. This study was design to compare the antimicrobial effect of different denture cleansers oxalic, tartaric, citric acids and alkaline peroxide with microwave irradiation on the growth of Candida albicans and Staphylococcus aureus respectively. Microwave oven used to disinfect specimens of heat-activated acrylic resin and soft linear. Oxalic, citric, tartaric acids, and alkaline peroxide were also used. Microorganisms that tested were Candida albicans and Staphylococcus aureus separately. Treatment with microwave or tartaric acid could achieve sterilization of both hot cured acrylic resins

The operating characteristics of optoelectronic devices depend critically on the properties physical of the constituent materials, interesting compound has been focused on this research formed from group III and V of the periodic table. Thin film n-InSb heterjuntion were successfully fabricated on p-Si substrates by thermal evaporation technique at different annealing temperature (as prepared, 400,500,600) °C. The effect of annealing temperature on the structural, surface morphology, optical and optoelectronic properties of InSb films were investigated and studied. The crystal structure of the film was characterized by X-ray diffraction and techniques. AFM techniques inspect the surface morphology of InSb films, the study presented the val