In this study, the effect of the annealing temperature on the material properties and the structural properties of cuprous oxide was studied in order to investigate how the annealing temperature affects the material properties, and the temperature varied between 200℃, 300℃, 400℃ and 500 ℃ and was unannealed. The physical properties of the cuprous oxide were measured by X-ray diffraction (XRD). The XRD patterns showed that the Cu₂O nanoparticles were highly pure, crystalline, and nano-sized. From the XRD results, we found the pure cuprite (Cu₂O) phase. The values of crystal size were discovered and calculated by the Halder-Wagner and Size-Strain Plot (SSP) methods, respectively. The crystallite size increased

    This paper is concerned with a Coupled Reaction-diffusion system defined in a ball with homogeneous Dirichlet boundary conditions. Firstly, we studied the blow-up set showing that, under some conditions, the blow-up in this problem occurs only at a single point. Secondly, under some restricted assumptions on the reaction terms, we established the upper (lower) blow-up rate estimates. Finally, we considered the Ignition system in general dimensional space as an application to our results.

In this research, the effect of electrode material on the parameters of the produced DBD plasma was investigated. First, a non-thermal plasma was created by applying a 15 kV AC voltage between two electrodes and using a glass plate as a dielectric barrier in the design Dielectric Barrier Discharge (DBD) plasma system. The obtained plasma spectrum was analyzed using optical emission spectroscopy to calculate plasma parameters by the Boltzmann plot method. Electrodes made of copper, aluminium, and stainless steel were employed in this research. Electron temperature ( ) for copper, aluminium, and stainless steel was found to be (1.398 eV), (1.093 eV) and (1.009 eV), respectively.

In this work, the photoluminescence spectra (PL) of porous silicon (PS) have been modified by adding gold nanoparticles (AuNPs) to PS layer. PS was produced via Photo electro-chemical etching (PECE) method of n-type Si wafer with resistivity of about (10 Ω.cm) and (100) orientation. Laser wavelength of (630 nm) and illumination intensity of about (30 mW/cm2), etching current density of (10mA/cm2), and etching time of (4 min) were used during the etching process. The bare PS before metallic deposition process and porous silicon/gold nanoparticles (PS/AuNPs) structures were investigated by X-Ray Diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive X-Ray (EDX). The photoluminescence spectra were investigated as a fu

This research include synthesized and characterization the compound [I] by reaction terephthaldehyde , mercaptoacetic acid and thiosemicarbazide with concentrated sulfuric acid then this compound reaction with ethyl chloroacetate and sodium acetate to product ester compound [II],the latter compound reaction with hydrazine hydrate to synthesized acid hydrazide [III] after that reaction with 4-alkoxy benzaldehyde[IV]n to synthesized Schiff bases compounds [V]n, the compound [VI] synthesized via reaction compound [I] with chloroacetic acid and sodium acetate then the compound[VI] reaction with 2-phenylenediamine in 4 N hydrochloric acid to product benzimidazole compound[VII]. The compounds characterized by melting points, FTIR and 1HNMR spectr

In this work, nanostructure zinc sulfide (ZnS) thin films at temperature of substrate 450 oC and thickness (120) nm have been produced by chemical spray pyrolysis method. The X-Ray Diffraction (XRD) measurements of the film showed that they have a polycrystalline structure and possessed a hexagonal phase with strong crystalline orientation of (103). The grain size was measured using scanning electron microscope (SEM) which was approximately equal to 80 nm. The linear optical measurements showed that ZnS nanostructure has direct energy gap. Nonlinear optical properties experiments were performed using Q-switched 532 nm Nd:YAG laser Z-scan system. The nonlinear refractive index (n2) and nonlinear absorption coefficient (β) estimated for Z

Optical properties of chromium oxide (Cr2O3) thin films which were prepared by pulse laser deposition method, onto glass substrates. Different laser energy (500-900) mJ were used to obtain Cr2O3 thin films with thickness ranging from 177.3 to 372.4 nm were measured using Tolansky method. Then films were annealed at temperature equal to 300 °C. Absorption spectra were used to determine the absorption coefficient of the films, and the effects of the annealing temperature on the absorption coefficient were investigated. The absorption edge shifted to red range of wavelength, and the optical constants of Cr2O3 films increases as the annealing temperature increased to 300 °C. X-ray diffraction (XRD) study reveals that Cr2O3 thin films are a