Pollen morphology characterization is an important field in taxonomy. This study aims to identify and characterize the pollen morphology for fourteen species from subfamily Caesalpiniodeae (Fabaceae). The results showed the similarity of all species pollen in terms of being monad and tri,zono-colporate type, and each Ceratonia siliqua and Senna occidentalis distinguished by having tetra,zono-colporate pollen as well, and the results revealed the prevalence of reticulate configuration in most studies species, while Ceratonia siliqua characterized by striates configuration, Cassia fistula distinguished by verrrucate-gemmate wall, and Senna species by verrrucate- perforate, as for the shape, showed a discrepancy in the general shape fr

Investigation regarding queue length dynamics have been explored using various kinds of models including ordinary differential equations (ODEs). ODEs possess the advantageous property of having a continuous-time representation of queue length dynamics, thus its adoption in this article in modelling various scenarios as system of first-order ODEs. Specifically, a multi-server queue is considered and a numerical approach for solving first-order ODEs using MATLAB is adopted to obtain approximate solutions of the resultant models. The results display the dynamics of the queue length in each scenario, thus showing the usefulness of ODEs in analysing the behaviour of queues using system of ODEs.

Polyaniline organic Semiconductor polymer thin films have been prepared by oxidative polymerization at room temperature, this polymer was deposited on glass substrate with thickness 900nm, FTIR spectra was tested , the structural,optical and electrical properties were studied through XRD ,UV-Vis ,IR measurements ,the results was appeared that polymer thin film sensing to NH3 gas.

Semiconductor laser is used in processing many issues related to the scientific, military, medical, industrial and agricultural fields due to its unique properties such as coherence and high strength where GaN-based components are the most efficient in this field. Current technological developments mention to the strong connection of GaN with sustainable electronic and optoelectronic devices which have high-efficiency. The threshold current density of Al0.1Ga0.9N/GaN triple quantum well laser structure was investigated to determine best values of the parameters affecting the threshold current density that are well width, average thickness of active region, cavity length, reflectivity of cavity mirrors and optical confinement factor. The opt