CdS and CdS:Sn thin films were successfully deposited on glass
substrates by spray pyrolysis method. The films were grown at
substrate temperatures 300 C°. The effects of Sn concentration on the
structural and optical properties were studied.
The XRD profiles showed that the films are polycrystalline with
hexagonal structure grown preferentially along the (002) axis. The
optical studies exhibit direct allowed transition. Energy band gap
vary from 3.2 to 2.7 eV.

In this paper Alx Ga1-x As:H films have been prepared by using new deposition method based on combination of flash- thermal evaporation technique. The thickness of our samples was about 300nm. The Al concentration was altered within the 0 x 40.
The results of X- ray diffraction analysis (XRD) confirmed the amorphous structure of all AlXGa1-x As:H films with x  40 and annealing temperature (Ta)<200°C. the temperature dependence of the DC conductivity GDC with various Al content has been measured for AlXGa1-x As:H films.
We have found that the thermal activation energy Ea depends of Al content and Ta, thus the value of Ea were approximately equal to half the value of optical gap.

Tin:antimony oxides composites have given great attention due to their unique properties and many application in various fields like optoelectronic devices, gas sensors. The synthesis and characterization of (SnO2)1-x(Sb2O3)x was conducted in order to comprehend the structure and discuss the optical and dielectric properties of this composites. The x-ray showed that the prepared pure tin oxide thin film was had a polycrystalline structure and that the peaks were identical with the tetragonal phase while the peaks were identical with antimony oxide for x=0.1 to x=0.5. The average crystal size along the preferred level of growth of tin oxide as well as of antimony oxide showed non regular change by i

We have investigated the impact of laser pulse wavelength on the quantity of ablated materials. Specifically, this study investigated the structural, optical, and morphological characteristics of tungsten trioxide (WO3) nanoparticles (NPs) that were synthesized using the technique of pulsed-laser ablation of a tungsten plate. A DD drop of water was used as the ablation environment at a fixed fluence at 76.43 J/cm2 and pulse number was 400 pulses of the laser. The first and second harmonic generation ablations were carried out, corresponding to wavelengths of 1064 and 532 nm, respectively. The Q-switched Nd: YAG laser operates at a repetition rate of 1 Hz and has a pulse width of roughly 15 ns. These parameters are applicable to both wavelen

Sb2S3 thin films have been prepared by chemical bath deposition on a glas sub Absorbance and transmittance spectra were recorded in the wavelength range (30-900) nm. The effects of thickness on absorption coefficient, reflectance, refractive index, extinction coefficient, real and imaginary parts of dielectric constant were estimated. It was found that the reflectivity, absorption coefficient , extinction coefficient, real part of dielectric constant and refractive index, all these parameters decrease as the thickness increased, while the imaginary part of the dielectric constant increase as the thickness incre

Results of a study of alloys and films with various Pb content have been reported and discussed. Films of of thickness 1.5 μm have been deposited on glass substrates by flash thermal evaporation method at room temperature, under vacuum at constant deposition rate. These films were annealed under vacuum around 10⁻⁶Torr at different temperatures up to 523 K. The composition of the elements in alloys was determined by standard surfaces techniques such as atomic absorption spectroscopy (AAS) and X-ray fluorescence (XRF), and the results were found of high accuracy and in very good agreement with the theoretical values. The structure for alloys and films is determined by using X-ray

In this study, thin film of pure zinc oxide (ZnO) and ZnO doped with Ga2O3 films with different concentrations (0, 0.03, 0.05, 0.07 and 0.09)wt% were prepared by pulsed laser deposition. The powder mixture was then sintered in a furnace at 1273 K for 5 h. The resulting powders were thoroughly ground and then pressed using a special press to form discs with a diameter of 1 cm and a thickness of 0.5 cm. The deposition was carried out under a vacuum of 2.5×10−2 mbar on various substrates, including glass for AFM measurements and n-type crystalline silicon wafers for the gas sensor. AFM results revealed a progressive increase in both grain size and roughness with moderate doping and irregularity at high doping levels. Gas-sensing meas