Preferred Language
Articles
/
WBbuFIcBVTCNdQwCpTXP
Widening of the optical band gap of CdO2(1-X)Al(X) thin films prepared by pulsed laser deposition
...Show More Authors

In this study, doped thin cadmium peroxide films were prepared by pulsed laser deposition with different doping concentrations of aluminium of 0.0, 0.1, 0.3, and 0.5 wt.% for CdO2(1-X)Al(X) and thicknesses in the range of 200 nm. XRD patterns suggest the presence of cubic CdO2 and the texture factor confirms that the (111) plane was the preferential growth plane, where the texture factor and the grain size decreased from 2.02 to 9.75 nm, respectively, in the pure sample to 1.88 and 5.65 nm, respectively, at a concentration of 0.5 wt%. For the predominant growth plane, the deviation of the diffraction angle Δθ and interplanar distance Δd from the standard magnitudes was 2.774° and 0.318 Å, respectively, for the pure sample decreased to − 2.633° and 0.301 Å for the largest doping concentration. The optical absorption was found to decrease with increasing doping concentration, where the changes in threshold wavelengths from the standard λ = 496 nm were blue shifted by Δλ = 142, 133, 128, and 152 nm, respectively, for the concentrations used. The occurrence of such blue shifts points to a widening of the band gap to Eg = 3.5, 3.4, 3.35, and 3.6 eV for concentrations of 0.0, 0.1, 0.3, and 0.5 wt%, respectively.

Scopus Clarivate Crossref
View Publication
Publication Date
Tue Jun 09 2026
Journal Name
Optical Review
Preparation and characterization of ZnO: Ga2O3 thin film via pulsed laser deposition for NO2 and H2S gas sensing application
...Show More Authors

In this study, thin film of pure zinc oxide (ZnO) and ZnO doped with Ga2O3 films with different concentrations (0, 0.03, 0.05, 0.07 and 0.09)wt% were prepared by pulsed laser deposition. The powder mixture was then sintered in a furnace at 1273 K for 5 h. The resulting powders were thoroughly ground and then pressed using a special press to form discs with a diameter of 1 cm and a thickness of 0.5 cm. The deposition was carried out under a vacuum of 2.5×10−2 mbar on various substrates, including glass for AFM measurements and n-type crystalline silicon wafers for the gas sensor. AFM results revealed a progressive increase in both grain size and roughness with moderate doping and irregularity at high doping levels. Gas-sensing meas

... Show More
View Publication
Scopus Crossref
Publication Date
Fri Jan 01 2016
Journal Name
World Scientific News
Effect of annealing temperature on the structural and optical properties of CdSe: 1% Ag thin films
...Show More Authors

Publication Date
Tue Oct 30 2018
Journal Name
Journal Of Engineering
Accuracy Assessment of Stonex X-300 Laser Scanner Cameras
...Show More Authors

Assessment the actual accuracy of laboratory devices prior to first use is very important to know the capabilities of such devices and employ them in multiple domains. As the manual of the device provides information and values in laboratory conditions for the accuracy of these devices, thus the actual evaluation process is necessary.

In this paper, the accuracy of laser scanner (stonex X-300) cameras were evaluated, so that those cameras attached to the device and lead supporting role in it. This is particularly because the device manual did not contain sufficient information about those cameras.

To know the accuracy when using these cameras in close range photogrammetry, laser scanning (stonex X-300) de

... Show More
View Publication Preview PDF
Crossref (1)
Crossref
Publication Date
Wed Aug 04 2021
Journal Name
Ibn Al-haitham International Conference For Pure And Applied Science (ihicps)
Effect of Annealing on structural and optical properties of Indium Selenide (InSe) Thin films prepared by vacuum THERMAL EVAPORATION TECHNIQUE
...Show More Authors

Publication Date
Sat May 01 2021
Journal Name
Journal Of Physics: Conference Series
Study The Effect of Annealing on Structural and Optical Properties of Indium Selenide (InSe) Thin Films Prepared by Vacuum Thermal Evaporation Technique
...Show More Authors
Abstract<p>In this work, InSe thin films were deposited on glass substrates by thermal evaporation technique with a deposit rate of (2.5∓0.2) nm/sec. The thickness of the films was around (300∓10) nm, and the thin films were annealed at (100, 200 and 300)°C. The structural, morphology, and optical properties of Indium selenide thin films were studied using X-ray diffraction, Scanning Electron Microscope and UV–Visible spectrometry respectively. X-ray diffraction analyses showed that the as deposited thin films have amorphous structures. At annealing temperature of 100°C and 200°C, the films show enhanced crystalline nature, but at 300°C the film shows a polycrystalline structure with Rhombohedral phas</p> ... Show More
View Publication Preview PDF
Scopus (12)
Crossref (11)
Scopus Crossref
Publication Date
Tue Jan 01 2019
Journal Name
Energy Procedia
Studying The Effect of The Type of Substrate on The Structural, Morphology and Optical Properties of TiO2 Thin Films Prepared by RF Magnetron Sputtering
...Show More Authors

View Publication
Crossref (16)
Crossref
Publication Date
Sun Mar 01 2020
Journal Name
Journal Of Mechanical Science And Technology
Damage detection in glass/epoxy composite structure using 8–12 GHz X-band
...Show More Authors

View Publication
Scopus (7)
Crossref (6)
Scopus Clarivate Crossref
Publication Date
Wed Jun 10 2026
Journal Name
Applied Physics A
Annealing-temperature-dependent structural, optical, and NO2 gas-sensing properties of Ag-doped NiO thin films prepared by dip coating
...Show More Authors

Ag-doped NiO thin films were fabricated by dip coating and subsequently annealed at 373, 473, 573, and 673 K to elucidate the influence of annealing temperature on their structural, morphological, optical, and NO2-sensing characteristics. X-ray diffraction confirmed the formation of polycrystalline Ag/NiO films, with progressively improved crystallinity and larger crystallite size at elevated annealing temperatures. Atomic force microscopy revealed a homogeneous surface morphology with grain growth, with the average grain diameter increasing from 26.40 to 34.2 nm. Optical analysis showed high visible-region transmittance (65–70%) and a gradual reduction in the optical band gap from 2.75 to 2.07 eV with increasing annealing temperature. Ga

... Show More
View Publication
Scopus Crossref
Publication Date
Tue Jan 17 2012
Journal Name
Journal Of Electron Devices
INVESTIGATION OF OPTICAL PROPERTIES OF THE PbS/CdS THIN FILMS BY THERMAL EVAPORATION
...Show More Authors

In this work, we have investigated optical properties of the thermally evaporation PbS/CdS thin films. The optical constant such as (refractive index n, dielectric constant εi,r and Extinction coefficient κ) of the deposition films were obtained from the analysis of the experimental recorded transmittance spectral data. The optical band gap of PbS/CdS films is calculate from (αhυ)1/2 vs. photon energy curve.

Publication Date
Wed Jan 01 2014
Journal Name
Journal Of Thi – Qar Science
Enhanced of the Two photon Absorption in Nanostructure Wide Band gap Semiconductor CdS using femtosecond Laser
...Show More Authors

We observed strong nonlinear absorption in the CdS nanoparticles of dimension in the range 50-100 nm when irradiant with femtosecond pulsed laser at 800 nm and 120 GW/cm 2 irradiance intensity. The repetition rate and average power were 250 kHz and

View Publication