Zinc Oxide transparent thin films (ZnO) with different thickness from (220 to 420)nm
±15nm were prepared by thermal evaporation technique onto glass substrates at 200 with
the deposition rate of (10 2) nm sec
-1
, X-ray diffraction patterns confirm the proper phase
formation of the material. The investigation of (XRD) indicates that the (ZnO) film is
polycrystalline type of Hexagonal and the preferred orientation along (002) plane. The Optical
properties of ZnO were determined through the optical transmission method using ultraviolet-visible spectrophotometer with wavelength (300 – 1100) nm. The optical band gap values of
ZnO thin films were slightly increased from (2.9 - 3.1) eV as the film thickn

  A thermal evaporation technique was used to prepare ZnO thin films. The samples were prepared with good quality onto a glass substrate and using Zn metal. The thickness varied from (100 to 300) ±10 nm. The structure and optical properties of the ZnO thin films were studied. The results of XRD spectra confirm that the thin films grown by this technique have hexagonal wurtzite, and also aproved that ZnO films have a polycrystalline structure. UV-Vis measurement, optical transmittance spectra, showed high transmission about 90% within visible and infrared range. The energy gap is found to be between 3.26 and 3.14e.V for 100 to 300 nm thickness respectivly. Atomic Force Microscope AFM (topographic image ) shows the grain size incre

 The quaternary alloy of Cu₂CdSnS₄ (CCSS) is one type of thin film materials that contributes to the field of photovoltaic devices manufacturing, the importance of which has not been commonly enlightened as most of the other materials. For the preparation of CCSS thin films at 350 °C on glass substrates, the chemical spray pyrolysis technique was used. The optical properties of thin films prepared under the influence of the variation of copper solution molarity (0.03, 0.05, 0.07, and 0.09 M) on the quaternary compound were examined using a UV-vis spectrophotometer. The findings of the AFM study showed the atoms on the surface that are acclimatized in the form of nanorods with an increase in the average grain s

    In this work, the influence of the annealing temperature on the optical properties of the thin films Cadmium Sulphide (CdS) has been studied. Thin films of Cadmium Sulphide (CdS) were made using the Physical Vapor Deposition (PVD) method. The optical properties of annealing temperatures (as deposited, 200, 250, and 300  ) were scrupulous. The UV/VIS spectrophotometer investigated optical parameters such as transmission, the coefficient of absorption and energy gap of the films for the range (400-110 nm) as an assignment of the annealing temperature. The optical properties were calculated as a function of annealed temperature: absorption, transmission, reflection, band gap, coefficient of absorp

Copper Zinc Sulphide (Cu0.5Zn0.5S) alloy and thin films were fabricated in a vacuum. Nano crystallized (CZS) film with thick 450±20 nm was deposit at substrates glasses using thermal evaporation technique below ~ 2 × 10− 5 mbar vacuum to investigated the films structural, morphological and optical properties depended on annealing temperatures ( as-deposited, 423, 523 and 623) K for one hour. The influences annealed temperature on structurally besides morphologically characteristics on these films were investigated using XRD and AFM respectively. XRD confirms the formation a mixed hexagonal phase of CuS-ZnS in (102) direction with polycrystalline in nature having very fine crystallites size varying from (5.5-13.09) nm. AFM analys

BaTiO3 thin films have been deposited on Si (111) and glass substrates by using pulsed laser deposition technique. The films were characterized by using X-ray diffraction, atomic force microscope and optical transmission spectra. The films growth on Si after annealing at 873K showed a polycrystalline nature, and exhibited tetragonal structure, while on glass substrate no growth was noticed at that temperature. UV-VIS transmittance measurements showed that the films are highly transparent in the visible wavelength region and near-infrared region for sample annealing on glass substrate. The optical gap of the film were calculated from the curve of absorption coefficient (αhν) 2 vs. hν and was found tobe 3.6 eV at substrate temperature 5

   The ZnTe alloy was prepared as  deposited thin films on the glass substrates at a thickness of 400±20 nm using vacuum evaporation technique at pressure (1 × 10^-5) mbar and room temperature. Then the thin films under vacuum (2 × 10^-3 mbar) were annealing at (RT,100 and 300) °C for one hour. The structural properties were studied by using X-ray diffraction and AFM, the results show that the thin films had approached the single crystalline in the direction (111) as preferred orientation of the structure zinc-blende for cubic type, with small peaks of tellurium (Te) element for all prepared thin films. The calculated crystallite size (C_s) decreased with the increase in the anne

The crystal structure and unit cell dimensions of the (S03) compound have  been determined by employing the principles of crystallography.

The X-Ray diffraction spectra of (Sb203) which recorded as a function  of   different  annealing  temperatures  (100,150,200  and

250)±5c and for durations (0.5  hr,

0

1hr, l.Shr and 2hr), showed a

noticeable improvement, a decreasing in the unit cell dimensions and

an increasing in the number of diffraction spectra.

Indexing of diffraction spectra and refinement of  unit cell

dimensions showed that the compound (Sb203)  which is a

 X-ray diffraction pattern reveled the tetragonal crystal system of SnO2  Thin films of SnO2 were prepared on glass substrates using Spray Pyrolysis Technique. The absorption and transmition spectra were recorded in the rang of 300-900nm,  the   spectral   dependences   of   absorption coefficient were calculated   from   transmission spectra. The direct and allowed optical  energy gap has been evaluated from plots of   (αhÏ…)²  vs. (hÏ…) . The energy gap was found to be  2.4-2.6eV.  The optical constant such as extinction coefficient( k )  and absorption coefficient ( α) have been evaluated. 

     Zinc oxide films (ZnO) are prepared by an electrolysis technique and without vacuum and then annealed atvarious temperatures (300,400,500)^OC for an hour. The structural analysis performed by X-Ray diffraction (XRD) shows,dominant orientation of this films is plane (101), has a hexagonal structure and  polycrystalline pattern and it was is found that the crystal size increases(24,29) nm at annealing temperatures (300, 400)° C, but the crystal size decreases to (20 nm) at annealing temperature (500 ° C). As the results of a surface nature study of these films showed by examining the atomic force microscope (AFM), the grain  size increases from (60.79 to 88.11) nm, and the surface roughnes