The proliferation of manipulated multimedia content poses a significant threat in an era heavily reliant on social networks as primary information sources. Despite numerous countermeasures targeting specific attack types, the seamless nature of image manipulation challenges the differentiation between authentic and altered visuals. This study aims to detect fake images generated by StyleGAN2-ADA using watermark analysis and image content analysis techniques. The first experiment evaluates the performance of watermarking techniques in the spatial (Least Significant Bit (LSB)) and frequency (Discrete Cosine Transform (DCT)) domains using real-life imagery. Then, watermarked images are used as input to the StyleGAN2-ADA model to genera
... Show MoreHerein, a biocomposite of crosslinked chitosan polyethylene glycol diglycidyl ether (CS-PEDGE), montmorillonite (MMT), and foodgrade algae (FGA) was successfully prepared by a hydrothermal technique. The resulting absorbent (CS-PEDGE/FGA/MMT) was assessed for its adsorption property with methyl violet 2B (MV 2B) a toxic cationic dye. The physicochemical properties of CS-EDGE/ FGA/MMT were assessed via various analytical techniques, including BET, Elemental analysis, pHpzc, and spectroscopy (FTIR, XRD, SEM-EDX). The influence of three adsorption variables, namely adsorbent dose (A: 0.02–0.1 g/100 mL), solution pH (B: 4–10), and contact time (C: 10–420 min) on the rate of MV 2B dye removal was examined using the Box-Behnken design (RSM-
... Show MoreIn this paper, a comparison between horizontal and vertical OFET of Poly (3-Hexylthiophene) (P3HT) as an active semiconductor layer (p-type) was studied by using two different gate insulators (ZrO2 and PVA). The electrical performance output (Id-Vd) and transfer (Id-Vg) characteristics were investigated using the gradual-channel approximation model. The device shows a typical output curve of a field-effect transistor (FET). The analysis of electrical characterization was performed in order to investigate the source-drain voltage (Vd) dependent current and the effects of gate dielectric on the electrical performance of the OFET. This work also considered the effects of the capacitance semiconductor on the performance OFETs. The value
... Show MoreElectrochemical Grinding (ECG) process is a mechanically assisted electrochemical process for material processing. The process is able to successfully machine electrically conducting harder materials at faster rate with improved surface finish and dimensional control. This research studies the effect of applied current, electrolyte concentration, spindle speed and the gap between workpiece and tool on hardness and material removal rate during electrochemical grinding for stainless steel 316. The characteristic features of the electrochemical grinding process are explored through Taguchi-design-based experimental studies. The better hardness can be obtained at 10 A of the current, 150 g/l of the electrolyte concentration, 0.3 mm of gap an
... Show MorePrediction of the formation of pore and fracture pressure before constructing a drilling wells program are a crucial since it helps to prevent several drilling operations issues including lost circulation, kick, pipe sticking, blowout, and other issues. IP (Interactive Petrophysics) software is used to calculate and measure pore and fracture pressure. Eaton method, Matthews and Kelly, Modified Eaton, and Barker and Wood equations are used to calculate fracture pressure, whereas only Eaton method is used to measure pore pressure. These approaches are based on log data obtained from six wells, three from the north dome; BUCN-52, BUCN-51, BUCN-43 and the other from the south dome; BUCS-49, BUCS-48, BUCS-47. Along with the overburden pr
... Show MoreThe research aims to design a narrow-band frequency drive amplifier (1.5GHz -1.6GHz), which is used to boost the transmitter amplifier's input signal or amplify the GPS, GlONASS signals at the L1 band.
The Power Amplifier printed circuit board (PCB) prototype was designed using InGaP HBT homogeneous technology transistor and GaAs Heterojunction Bipolar Transistor (HBT) transistor. Two models have been compared; one of the models gave 16dB gain, and the other gave 23dB when using an input power signal (-15dBm). The PCB consumes 2.4W of power and has a physical dimension of 11 x 4 cm.