Carbon nanotubes are an ideal material for infrared applications due to their
excellent electronic and photo electronic properties, suitable band gap, mechanical
and chemical stabilities. Functionalised multi-wall carbon nanotubes (f-MWCNTs)
were incorporated into polythiophen (PTh) matrix by electro polymerization
method. f-MWCNTs/ PTh nanocomposit films were prepared with 5wt% and
10wt% loading ratios of f-MWCNTs in the polymer matrix. The films are deposited
on porous silicon nanosurfaces to fabricate photoconductive detectors work in the
near IR region. The detectors were illuminated by semiconductor laser diode with
peak wavelength of 808 nm radiation power of 300 mW. FTIR spectra assignments
verify that t

     There has been an increase in demand for nanocomposite, which has resulted in large-scale manufacturers employing high-energy processes and harmful solvents. Because of this, the need for environmentally benign "green" synthesis processes has grown. Other methods for making nanocomposite include using plants and plant products, bacteria, fungi, yeast, and algae. Green synthesis has minimal toxicity and is safe for human health and the environment compared to other processes, making it the ideal option for creating nanocomposite materials. This work reveals an environmentally friendly synthesis method for magnetic nanocomposites. In particular, they were using an aqueous extract of Artemisia to obtain ZnO/Fe₃O₄

CZTS / CdS / ZnO / ITO solar cell was studied using Solar Cell Capacitance Simulato-1D (SCAPS-1D) program. We performed an improvement on the theoretical cell by increasing the doping and thickness of some layers. As a result, the efficiency was shifted from 2.18% to 6.17% and several back reflection layers (BSL) were introduced on the enhanced cell until. We obtained a highest conversion efficiency of 13.99%.  The best reflection layer (CZTSSe) was combined with the best buffer layer (CdSe), with thickness of 0.9µm, on the enhanced cell. Thereby, we obtained a cell with a conversion efficiency of 16.53%. A second improvement was made to the best obtained cell, where the CZTSSe with thickness of 0.05µm and the CdSe with thickness

In this work Study effect of annealing temperature on the Structure
of a-Se and electrical properties of a-Se/c-Si hetrojunction have been
studied.The hetrojunction fabricated by deposition of a-Se film on c-
Si using thermal evaporation.
Electrical properties of a-Se/ c-Si heterojunction include I-V
characteristics, in dark at different annealing temperature and C-V
characteristics are considered in the present work.
C-V characteristics suggested that the fabricated diode was
abrupt type, built in potential determined by extrapolation from
1/C2-V curve. The built - in potential (Vbi) for the Se/ Si System
was found to be increase from 1.21 to 1.62eV with increasing of
annealing temperature