Hazardous materials, heavy metals, and organic toxins released into the environment have caused considerable harm to microbes, plants, animals, and humans. Wastewater is one of the most contaminated ecosystems due to heavy metals emitted mostly by human activity. Bioremediation of wastewater is an ecologically acceptable and cost-effective method of removing heavy metals from sewage; the general purpose of this study is to analyse the dependability of anaerobic sludge biomass in removing sulfur compounds and heavy metals from waste water. The anaerobic sludge biomass evaluated in this work was taken from a wastewater treatment plant (WWTP) in Al-Rustumiya, Baghdad, and grown in the mineral medium for anaerobic growth. In serum bottl

Near-ideal p-CdS/n-Si heterojunction band edge lineup has been investigated for the first time with aid of I-V and C-V measurements. The heterojunction was manufactured by deposition of CdS films prepared by chemical spray pyrolysis technique (CSP) on monocrystalline n-type silicon. The experimental data of the conduction band offset Ec and valence band offset Ec were compared with theoretical values. The band offset Ec=530meV and Ev=770meV obtained at 300K. The energy band diagram of p-CdS/n-Si HJ was constructed. C-V measurements depict that the junction was an abrupt type and the built-in voltage was determined from C-2-V plot

The frequent and widespread use of medicines and personal care products, particularly in the residential environment, tends to raise concerns about environmental and human health impacts. On the other hand, carbon dioxide accumulation in the atmosphere is a problem with numerous environmental consequences. Microalgae are being used to bioremediate toxins and capture CO2. The current study aimed to confirm the possibility of removing pharmaceutical contaminant (Ranitidine) at different concentrations by using the Chlorella Sorokiniana MH923013 microalgae strain during the growth time. As part of the experiment, carbon dioxide was added to the culture medium three times per week. Explanatory results revealed that gas doses directly affect

The aim of this work is to study reverse osmosis characteristics for copper sulfate hexahydrate (CuSO4.6H2O), nickel sulfate hexahydrate (NiSO4.6H2O) and zinc sulfate hexahydrate (ZnSO4.6H2O) removal from aqueous solution which discharge from some Iraqi factories such as Alnasser Company for mechanical industries. The mode of operation of reverse osmosis was permeate is removed and the concentrate of metals solution is recycled back to the feed vessel. Spiral-wound membrane is thin film composite membrane (TFC) was used to conduct this study on reverse osmosis. The variables studied are metals concentrations (50 – 150 ppm) and time (15 – 90 min). It was found that increasing the time results in an increase in concentration of metal in p

Abstract. Silver, Indium Selenium thin film with a thickness (5001±30) nm, deposited by thermal evaporation methods at RT and annealing3temperature (Ta=400, 500 and 600) K on a substrate of glass to study structural and optical properties of thin films and on p-Si wafer to fabricate the AgInSe2/p-Si heterojunction solar cell. XRD analysis shows that the AgInSe2 (AIS) deposited film at RT and annealing3temperature (Ta=400, 500 and 600) K have polycrystalline structure. The average grain size has been estimated from AFM images. The energy gap was estimated from the optical transmittance using a spectrometer type (UV.-Visible 1800 spectra photometer). From I-V characterization , the photovoltaic parameters such as, open-circuit voltage, short

The choice of gate dielectric materials is fundamental for organic field effect transistors (OFET), integrated circuits, and several electronic applications. The operation of the OFET depends on two essential parameters: the insulation between the semiconductor layer and the gate electrode and the capacitance of the insulator. In this work, the electrical behavior of a pentacene-based OFET with a top contact / bottom gate was studied. Organic polyvinyl alcohol (PVA) and inorganic hafnium oxide (HfO2) were chosen as gate dielectric materials to lower the operation voltage to achieve the next generation of electronic applications. In this study, the performance of the OFET was studied using monolayer and bilayer gate insulators. To mo

The choice of gate dielectric materials is fundamental for organic field effect transistors (OFET), integrated circuits, and several electronic applications. The operation of the OFET depends on two essential parameters: the insulation between the semiconductor layer and the gate electrode and the capacitance of the insulator. In this work, the electrical behavior of a pentacene-based OFET with a top contact / bottom gate was studied. Organic polyvinyl alcohol (PVA) and inorganic hafnium oxide (HfO₂) were chosen as gate dielectric materials to lower the operation voltage to achieve the next generation of electronic applications. In this study, the performance of the OFET was studied using monolayer and bilayer gate insulators.