The objective of this study is to investigate the application of advanced oxidation processes (AOPs) in the treatment of wastewater contaminated with furfural. The AOPs investigated is the homogeneous photo-Fenton (UV/H2O2/Fe+2) process. The experiments were conducted by using cylindrical stainless steel batch photo-reactor. The influence of different variables: initial concentration of H2O2 (300-1300mg/L), Fe+2(20-70mg/L), pH(2-7) and initial concentration of furfural (50-300 mg/L) and their relationship with the mineralization efficiency were studied.
Complete mineralization for the system UV/H2O2/Fe+2 was achieved at: initi
... Show MoreIn the present work, tetracycline (TC) was removed from a simulated wastewater through a new photo-anodic oxidation process with a rotating graphite cylinder anode. The effects of current density, pH, rotation speed, and NaCl addition were evaluated. The results confirmed that increasing the current density results in improving the removal of TC. However, increasing the current density beyond 5 mA/cm2 had little effect on TC removal. Results revealed that TC removal using photoanodic oxidation can be achieved at high performance with an initial pH of 5. Increasing or decreasing pH beyond this value has a negative effect on TC removal. Increasing rotation speed gave better performance for TC removal due to the increase in mass t
... Show MoreCopper electrodeposition by electrorefining process in acidic sulfate media contains 40 g/l of cupric ions and 160 g/l of sulfuric acid was achieved to study the influence of the operating parameters on cathode purity, surface morphology, deposition rate, current efficiency and power consumption. These operating parameters and there ranges are: current density 200, 300 and 400 A/m2, electrolyte temperature 35, 50 and 65 oC, electrodes spacing 15, 30 and 45 mm and electrolyte residence time 6, 4 and 2 h were utilized. XRF, SEM and EDX analyses were attained to clarify the properties of the produced cathode.
The present project involves photodegrading the dye solochrom violet under advanced oxidation techniques at (25 oC) temperature and UV light. Zinc Oxide (ZnO) and UV radiation at a wavelength of 580 nm were used to conduct the photocatalytic reaction of the solochrom violet dye. One of the factors looked into was the impact of the starting conditions. pH, the amount of original hydrogen peroxide, and the dye concentration time radiation were used. For hours, the kinetics and percentages of degradation were examined at various intervals. In general, it has been discovered that the photodegradation rates of the dye were greater when H2O2 and ZnO were combined with UV light. The best wavelength to use was determined. Modern oxidation techni
... Show MorePolymeric hollow fiber membrane is produced by a physical process called wet or dry/wet phase inversion; a technique includes many steps and depends on different factors (starting from selecting materials, end with post-treatment of hollow fiber membrane locally manufactured). This review highlights the most significant factors that affect and control the characterization and structure of ultrafiltration hollow fiber membranes used in different applications.
Three different types of polymers (polysulfone PSF, polyethersulfone PES or polyvinyl chloride PVC) were considered to study morphology change and structure of hollow fiber membranes in this review. These hollow fiber membranes were manufactured with different pro
... Show MoreIn this work, porous silicon (PS) are fabricated using electrochemical etching (ECE) process for p-type crystalline silicon (c-Si) wafers of (100) orientation. The structural, morphological and electrical properties of PS synthesized at etching current density of (10, 20, 30) mA/cm2 at constant etching time 10 min are studied. From X-ray diffraction (XRD) measurement, the value of FWHM is in general decreases with increasing current density for p-type porous silicon (p-PS). Atomic force microscope (AFM) showed that for p-PS the average pore diameter decreases at 20 mA. Porous silicon which formed on silicon will be a junction so I-V characteristics have been studied in the dark to calculate ideality factor (n), and saturation current (Is
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