structural and electrical of CuIn (Sex Te1-x)2

A nanocrystalline thin films of PbS with different thickness (400, 600)nm have been prepared successfully by chemical bath deposition technique on glass and Si substrates. The structure and morphology of these films were studied by X-ray diffraction and atomic force microscope. It shows that the structure is polycrystalline and the average crystallite size has been measured. The electrical properties of these films have been studied, it was observed that D.C conductivity at room temperature increases with the increase of thickness, From Hall measurements the conductivity for all samples of PbS films is p-type. Carrier's concentration, mobility and drift velocity increases with increasing of thickness. Also p-PbS/n-Si heterojunction has been

 Thin films were prepared from melting coumrin C 2 dye in solvent DMF with PMMA with the same  solvent and concentrations(1*10-2    5*10-3, 1*10-3  )M ,Films were either left on Flat surface for24hours or dried in avacuum oven for five hours at a temperature of 80c.The relative intensity of both the absorption and fluorescece spectrum are found to be increased with the increase of thickness of these films and concentration  .Also the thickness of these films was measured by Mickelsons interfearing method.Also quantum efficiency of these films were measured too

In this work, A new strategy for enhancing the efficiency of dye sensitized solar cells (DSSC) by doping foreign ion and co- doping TiO2 / Fe and Cu (38 nm ) was prepared by sol-gel method and successfully used as a photoanode for (DSSC). The samples were characterized by using X-ray diffraction ( XRD) is used to calculate grain size, before and after Fe, Cu- doping and co- doping. Glass coating process with a thin layer on (Fluorine doped tin oxide) FTO glass by using doctor Blade technique .The optimum thickness utilized for TiO2 paste is (15μm) on a conductive glass. The best experimental results for doping and co- doping TiO2 with additive Copper (II) nitrate Cu (NO3)2 as improved it was VOC=0.6 V, ISC=1.92 mA, Imax=1.8 mA and Vmax=

The electrical properties of the AlNiCo thin films with thickness (1000oA) deposited on glass substrates using Ion – Beam sputtering (IBS) technique under vacuum <10-6 torr have been studied . Also it studied the effect of annealing temperature from this films , It is found that the effective energy decrease with increase of temperature and the conductivity decrease with increase temperature 323oK but after this degree the conductivity increasing .

In this work, (CdO)1-x (CoO)x thin films were prepared on glass slides by laser-induced plasma using Nd:YAG laser with (λ=1064 nm) and duration (9 ns) at different laser energies (200-500 mJ) with ratio (x=0.5), The influence of laser energy on structural and optical properties has been studied. XRD patterns show the films have a structure of polycrystalline wurtzite. As for AFM tests results for the topography of the surface of the film, where the results showed that the grain size and the average roughness increase with increasing laser energy. The optical properties of all films were also studied and the results showed that the absorption coefficient for within the wavelength range (280-1100 nm), The value of the optical power gap fo