Doping And Annealing Effect On Evaporation Of ZnO Thin Films
(3)
(1)
Publication Date
Sat May 01 2021
Journal Name
Journal Of Physics: Conference Series
Violet Laser Irradiation Effect on The Optical Properties of Cobalt oxide (CoO<sub>2</sub>) Thin Films deposited via Semi-Computerized Spraying System
Abstract<p>The existing investigation explains the consequence of irradiation of violet laser on the optic properties of (CoO<sub>2</sub>) films. The film was equipped by the utilization of semi-computerized spray pyrolysis technique (SCSPT), it is the first time that this technique is used in the preparation and irradiation using a laser in this technique. From the XRD analysis, the crystalline existence with trigonal crystal system was when the received films were processed by continuous violet laser (405 nm) with power (1W) for different laser irradiation time using different number of times a laser scan (0, 6, 9, 12, 15 and 18 times) with total irradiation time(0,30,45,60,75,90 min</p>
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Publication Date
Mon Mar 01 2021
Journal Name
Journal Of Physics: Conference Series
Investigating the Effect of ZnO on the Structural and Optical Properties of (MgO)<sub>1-x</sub>(ZnO)<sub>x</sub> via Pulsed Laser Deposition
Abstract<p>This work concerned with effect of zinc oxide concentrating on the structural and optical properties of (MgO)<sub>1-x</sub>(ZnO)<sub>x</sub> thin films. (MgO)<sub>1-x</sub>(ZnO)<sub>x</sub> compounds were produced by mixing the two oxides powders accordance to the atomic ratios and compressed as pellets, these pellets were sintered in an oven at temperature1273K for five hours. Thin films from (MgO)<sub>1-x</sub>(ZnO)<sub>x</sub> compounds were obtained using pulsed laser deposition technique using Nd:YAG laser . The results of x-ray diffraction as well as UV-Visible- spectrophotometer measurements transmittance of (MgO)<jats></jats></p>
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PLD
(MgO)1-x(ZnO)x
XRD.
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Publication Date
Mon Mar 08 2021
Journal Name
Baghdad Science Journal
study Of Optical Properties Of Copper-Doped Cds Thin Films
Thin films of CdS:Cu were deposited onto glass substrate temperature 400 °c. The optieal properties have been studied for Cds doped with (1,3, 8) wt% of Cu before and after Gamma irradiation. It was found that the irradiation caused an ( Frenkel defects) where the atom is displaced from its original site leaving vacancy and forming on interstitial atom. It was found the irradiation caused an absorption edge shifting towards long wavelength as a result of the increasing of Cu concentration.
Publication Date
Fri Sep 01 2023
Journal Name
Energy Reports
Effect of solvents on performance of Alq3/ZnO solar cells: A theoretical approach
Quantum model
Theoretical solar cell
Fill factor
Successfully, theoretical equations were established to study the effect of solvent polarities on the electron current density, fill factor and efficiencies of Tris (8-hydroxy) quinoline aluminum (Alq3)/ ZnO solar cells. Three different solvents studied in this theoretical works, namely 1-propanol, ethanol and acetonitrile. The quantum model of transition energy in donor–acceptor system was used to derive a current formula. After that, it has been used to calculate the fill factor and the efficiency of the solar cell. The calculations indicated that the efficiency of the solar cell is influenced by the polarity of solvents. The best performance was for the solar cell based on acetonitrile as a solvent with electron current density of (5.0
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(5)
(2)
Publication Date
Sat May 01 2021
Journal Name
Journal Of Physics: Conference Series
Tailoring the structural, morphological, electrical and optical characteristics of transparent and conductive ZnO/Ag-NPs thin film coatings
Abstract<p>In this study, high quality ZnO/Ag-NPs thin transparent and conductive film coatings were fabricated <italic>via</italic> sol-gel process combined with spin-coating technique. Structural, surface morphology, electrical and optical properties were investigated by means of XRD, Hall effect measurements, FESEM and UV-Vis. The synthesized ZnO/Ag-NPs thin films shows a polycrystalline wurtzite structure, and the grain sizes enlarged when the annealing temperature increased. The surface morphologies of the coatings were dense, smooth and homogeneous as proved by FESEM images. The resistivity of (5.8×10<sup>−4</sup> Ω.cm), the carrier concentration of (3×10<sup></sup></p>
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(1)
Publication Date
Sat Aug 19 2023
Journal Name
Silicon
(5)
(4)
Publication Date
Tue Jan 01 2019
Journal Name
Energy Procedia
Publication Date
Sat May 01 2021
Journal Name
Journal Of Physics: Conference Series
Effect of Red Laser Irradiation on The Optical Properties of Cobalt oxide (CoO<sub>2</sub>) Thin Films deposited via Semi-Computerized Spraying Technique
Abstract<p>The existing investigation explains the consequence of irradiation of red laser on the optic properties of (CoO<sub>2</sub>) films. The film was equipped by the utilization of semi-computerized spray pyrolysis technique (SCSPT), it is the first time that this technique is used in the preparation and irradiation using a laser in this technique. From the XRD analysis, the crystalline existence with trigonal crystal system was when the received films were processed by continuous red laser (700 nm) with power (>1000mW)for different laser irradiation time using different number of times a laser scan (0, 6, 9, 12, 15 and 18 times) with total irradiation time(0,30,45,60,75,90 mi</p>
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Publication Date
Sun Feb 24 2019
Journal Name
Iraqi Journal Of Physics
The optical properties of a- (GeS2)100-xGax thin films
Chalcogenide glasses
absorption coefficient
optical band gap
average bond energy.
Thin films whose compositions can be expressed by (GeS2)100-xGax (x=0, 6,12,18) formula were obtained by thermal evaporation technique of bulk material at a base pressure of ~10-5 torr. Optical transmission spectra of the films were taken in the range of 300-1100 nm then the optical band gap, tail width of localized states, refractive index, extinction coefficient were calculated. The optical constants were found to increase at low concentration of Ga (0 to12%) while they decreases with further addition of Ga. The optical band gap was found to change in opposite manner to that of optical constants. The variation in the optical parameters are explained in terms of average bond energy
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(1)
Publication Date
Sat Mar 01 2008
Journal Name
Iraqi Journal Of Physics
The Temperature Dependence of Photoconductivity in a-Ge20Se80 Thin Films
photoconductivity
The photoconductivity and its dependence on light intensity have been investigated in a-Ge20Se80 thin films as a function of temperature between (293–323)K. The result showed that the photoconductivity and photosensitivity increase with increase of annealing temperature. This behavior is interpreted in terms of the dispersive diffusion –controlled recombination of localized electrons and holes.