Increased downscaling of CMOS circuits with respect to feature size and threshold voltage has a result of dramatically increasing in leakage current. So, leakage power reduction is an important design issue for active and standby modes as long as the technology scaling increased. In this paper, a simultaneous active and standby energy optimization methodology is proposed for 22 nm sub-threshold CMOS circuits. In the first phase, we investigate the dual threshold voltage design for active energy per cycle minimization. A slack based genetic algorithm is proposed to find the optimal reverse body bias assignment to set of noncritical paths gates to ensure low active energy per cycle with the maximum allowable frequency at the optimal supply voltage. The second phase, determine the optimal reverse body bias that can be applied to all gates for standby power optimization at the optimal supply voltage determined from the first phase. Therefore, there exist two sets of gates and two reverse body bias values for each set. The reverse body bias is switched between these two values in response to the mode of operation. Experimental results are obtained for some ISCAS-85 benchmark circuits such as 74L85, 74283, ALU74181, and 16 bit RCA. The optimized circuits show significant energy saving ranged (from 14.5% to 42.28%) and standby power saving ranged (from 62.8% to 67%).
The traditional technique of generating MPSK signals is basically to use IQ modulator that involves analog processing like multiplication and addition where inaccuracies may exist and would lead to imbalance problems that affects the output modulated signal and hence the overall performance of the system. In this paper, a simple method is presented for generating the MPSK using logic circuits that basically generated M-carrier signals each carrier of different equally spaced phase shift. Then these carriers are time multiplexed, according to the data symbols, into the output modulated signal.
The purpose of the current work was to evaluate the effect of Radiation of Gamma on the superconducting characteristics of the compound PbBr2Ca1.9Sb0.1Cu3O8+δ utilizing a 137Cs source at doses of 10, 15, and 20MRad. Solid state reaction technology was used to prepare the samples. Before and after irradiation, X-ray diffraction (XRD) and superconductor properties were examined. Results indicated that the tetragonal structure of our chemical corresponds to the Pb-1223 phase with an increase in the ratio c/a as a result of gamma irradiation. (Tc (onset) ) and on set temperature Tc (offset)) were also dropping from 113 to the 85.6 K and 129.5 to 97 K, respectively, for a transition temperatu
A new approach presented in this study to determine the optimal edge detection threshold value. This approach is base on extracting small homogenous blocks from unequal mean targets. Then, from these blocks we generate small image with known edges (edges represent the lines between the contacted blocks). So, these simulated edges can be assumed as true edges .The true simulated edges, compared with the detected edges in the small generated image is done by using different thresholding values. The comparison based on computing mean square errors between the simulated edge image and the produced edge image from edge detector methods. The mean square error computed for the total edge image (Er), for edge regio
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The preparation of composite metal oxide to attain high efficiency in removing phenol from wastewater has a great concern. In the present study, the focus would be on adopting antimony-tin oxide coating onto graphite substrates instead of titanium; besides the effect of SbCl3 concentration on the SnO2-Sb2O3 composite would be examined. The performance of this composite electrode as the working electrode in the removal of phenol by sonoelectrochemical oxidation will be studied. The antimony-tin dioxide composite electrode was prepared by cathodic deposition with SnCl2 . 2H2O solution in a mixture of HNO3 and NaNO3, with different concentrations of SbCl3. The SnO2-Sb2O3 deposit layer’s structure and morphology were examined and the 4 g/l Sb
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Abstract Ternary Silver Indium selenide Sulfur AgInSe1.8S0.2 in pure form and with a 0.2 ratio of Sulfur were fabricated via thermal evaporation under vacuum 3*10-6 torr on glasses substrates with a thickness of (550) nm. These films were investigated to understand their structural, optical, and Hall Characteristics. X-ray diffraction analysis was employed to examine the impact of varying Sulfur ratios on the structural properties. The results revealed that the AgInSe1.8S0.2 thin films in their pure form and with a 0.2 Sulfur ratio, both at room temperature and after annealing at 500 K, exhibited a polycrystalline nature with a tetragonal structure and a predominant orientation along the (112) plane, indicating an enhanced de
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