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Blue Organic-Inorganic Light Emitting Diode Based on Electroluminescence CdS Nanoparticle
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     A hybrid cadmium sulfide nanoparticles (CdSNPs) electroluminescence (EL) device was fabricated by Phase – Segregated Method and characterized. It was fabricated as layers of (ITO/poly-TPD:CdS ) and (ITO/poly-TPD:CdS /Alq3). Poly-TPD is an excellent Hole Transport Layer (HTL), CdSNPs is an emitting layer and Alq3 as electron transport layer (ETL). The EL of Organic-Inorganic Light Emitting Diode (OILED) was studied at room temperature at 26V. This was achieved according to band-to-band transition in CdSNPs. From the I-V curve behavior, the addition of Alq3 layer decreased the transfer of electrons by about 250 times. The I-V behavior for (poly-TPD/CdS) is exponential with a maximum current of 4500 µA. While, the current is constant for (poly-TPD:CdS /Alq3) and the maximum current was 16.5 µA. Semiconductor nanoparticles like CdS are attractive for fabricating hybrid LEDs with spectrally pure color, low operating voltage values, and short-wavelength electro-luminescence, needed for the RGB devices. The correlated color temperature (CCT) was equal to (1700 oK) for the emitted blue light.

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Publication Date
Mon May 01 2023
Journal Name
Journal Of Molecular Liquids
On the influence of hydrocarbons solvents on the inhibition efficiency of some organic corrosion inhibitors: Theoretical and validation studies
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Publication Date
Mon Jun 19 2023
Journal Name
Journal Of Engineering
Organic Solid Waste in Vessel Composting System
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Low-level microbial activity due to the production of organic acids is a recognized problem during the initial phase of food waste composting. Increasing such activity levels by adjusting the pH values during the initial composting phase is the primary objective to be investigated. In this study, sodium acetate (NaoAc) was introduced as an amendment to an in-vessel composting system. NaoAc was added when the pH of the compost mixture reached a low level (pH < 5), the addition increased pH to 5.8. This had a positive effect on the degradation of organic materials i.e. the formation of methane gas compared to the results without NaoAc addition.

The results also proved that anaerobic-aerobic in-vessel composting could reduce the

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Publication Date
Wed Nov 16 2016
Journal Name
Acs Applied Materials &amp; Interfaces
Minority Currents in n-Doped Organic Transistors
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Publication Date
Fri May 11 2018
Journal Name
Nanotechnology
Doped bottom-contact organic field-effect transistors
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Publication Date
Thu Dec 01 2016
Journal Name
Organic Electronics
Charge trapping in doped organic Zener diodes
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Publication Date
Tue Jun 12 2007
Journal Name
Iraqi Journal Of Laser
Nonlinear Optical Properties of CdS Thin Film Nanoparticles Using z-Scan Technique
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In the present work, a z-scan technique was used to study the nonlinear optical properties, represented by the nonlinear refractive index and nonlinear absorption coefficients of nanoparticles cadmium sulfide thin film. The sample was prepared by the chemical bath deposition method. Several testing were done including, x-ray, transmission and thickness of thin film. z-Scan experiment was performed at two wavelengths (1064 nm and 532 nm) and different energies. The results showed the effect of self-focusing in the material at higher intensities, which evaluated n2 to be (0.11-0.16) cm2/GW. The effect of two-photon absorption was studied, which evaluated β to be (24-106) cm/GW. In addition, the optical limiting behavior has been studied.

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Publication Date
Fri Nov 29 2019
Journal Name
Iraqi Journal Of Physics
Band Gap Characterization of Thermally Treated Hybrid Blend ZnPc/CdS Thin Films
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Spin coating technique used to prepare ZnPc, CdS and ZnPc/CdS blend thin films, these films annealed at 423K for 1h, 2h and 3h. Optical behavior of these films were examined using UV-Vis. and PL. The absorption spectrum of ZnPc shows a decreasing in absorption with the increase of annealing time while CdS spectrum give a clearly absorption peak at~510 nm. Energy gap of ZnPc increases from 1.41 to 1.52 eV by increasing the annealing time. Eg of CdS decrease by increasing annealing time, from 2.3 eV to 2.2 eV. The intensities of the peaks obtained from PL spectra were strongly dependent on annealing time and confirmed the results obtained from UV-Vis. D.C. conductivity measurement showed that all the thin films have two differen

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Publication Date
Thu Jan 13 2022
Journal Name
Iraqi Journal Of Science
Preparation and Characterization of Chemical Bath Deposition synthesis CdS Nanocrystalline Thin Films
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Cadmium sulfide (CdS) nanocrystalline thin films are prepared onto ITO-glass and Si(111) substrates by chemical bath deposition method. The scanning electron microscope images showed that the CdS thin film onto Si substrate is more homogenous without vacancies. The XRD patterns of the CdS nanocrystalline thin film confirm that they have polycrystalline with cubic phase. Room temperature photoluminescence (PL) spectrum of the CdS nanocrystalline thin films shows emission band located at 502nm for CdS/Si sample while the CdS/ITO-glass thin films shows a broad emission band peaked at 505nm. The Raman spectra of CdS nanocrystalline thin films prepared onto Si and ITO-glass substrates contain two main peaks which are corresponding to the firs

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Publication Date
Tue May 01 2018
Journal Name
Journal Of Physics: Conference Series
Physical properties of CdS/CdTe/CIGS thin films for solar cell application
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Publication Date
Wed Dec 30 2009
Journal Name
Iraqi Journal Of Physics
Preparation and characterization of nanostructure high efficient CdS/Si hetrojunction by CBD
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In this paper, CdS/Si hetrojunction solar cell has been made by
Chemical Bath Deposition (CBD) of CdS thin film on to
monocrystalline silicon substrate. XRD measurements approved that
CdS film is changing the structure of CdS films from mixed
hexagonal and cubic phase to the hexagonal phase with [101]
predominant orientation. I-V characterization of the hetrojunction
shows good rectification, with high spectral responsivity of 0.41
A/W, quantum efficiency 90%,and specific detectivity 2.9*1014
cmHz1/2W -1 .

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