Aluminum doped zinc selenide ZnSe/n-Si thin films of (250∓20 nm) thickness with (0.01, 0.02 and 0.03), are depositing on the two type of substrate (glass and n-Si) to manufacture (ZnSe/n-Si) solar cell through using thermal vacuum evaporation procedure. physical and optoelectronic properties were examined for the samples. X-Ray and AFM techniques are using to study the structure properties. The energy band gap of as-deposited ZnSe thin films for changed dopant ratio were ranging from (2.6-2.68 eV). The results of Hall effect show that pure and doping films were (p-type), and the concentration carriers and the carriers mobility increases with increase Al-dopant ratio. The (C-V) have shown that the heterojunction were of abrupt type. In addition, the I-V characteristics of ZnSe /Si heterojunctions show the forward dark current varies with applied voltage, besides the saturation current and the ideality factor are determined under different doping percentage. Also, the (I– V) characteristic for ZnSe/Si heterojunction show that the forward current at dark varies with applied voltage and the Isc and Voc have been studied. The photoelectric properties designated an increase light current of hetero junctions with cumulative Al-dopant, and I-V characteristics under illumination showed that the heterojunction (ZnSe: Al (0. 3%)/Si) have a high efficiency.
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In this paper mildly-regular topological space was introduced via the concept of mildly g-open sets. Many properties of mildly - regular space are investigated and the interactions between mildly-regular space and certain types of topological spaces are considered. Also the concept of strong mildly-regular space was introduced and a main theorem on this space was proved.
Let R be associative; ring; with an identity and let D be unitary left R- module; . In this work we present semiannihilator; supplement submodule as a generalization of R-a- supplement submodule, Let U and V be submodules of an R-module D if D=U+V and whenever Y≤ V and D=U+Y, then annY≪R;. We also introduce the the concept of semiannihilator -supplemented ;modules and semiannihilator weak; supplemented modules, and we give some basic properties of this conseptes.
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Our aim in this work is to investigate prime submodules and prove some properties of them. We study the relations between prime submodules of a given module and the extension of prime submodules. The relations between prime submodules of two given modules and the prime submodules in the direct product of their quotient module are studied and investigated.
Throughout this work we introduce the notion of Annihilator-closed submodules, and we give some basic properties of this concept. We also introduce a generalization for the Extending modules, namely Annihilator-extending modules. Some fundamental properties are presented as well as we discuss the relation between this concept and some other related concepts.
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Let M be an R-module, where R is a commutative ring with unity. A submodule N of M is called e-small (denoted by N e  M) if N + K = M, where K e  M implies K = M. We give many properties related with this type of submodules.
Let R be a commutative ring with identity and M be a unitary R- module. We shall say that M is a primary multiplication module if every primary submodule of M is a multiplication submodule of M. Some of the properties of this concept will be investigated. The main results of this paper are, for modules M and N, we have M N and HomR (M, N) are primary multiplications R-modules under certain assumptions.
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