A thin film of SnSe were deposited by thermal evaporation technique on 400 ±20 nm thick glass substrates of these films were annealed at different temperatures (100,150,200 ⁰C), The effect of annealing on the characteristics of the nano crystalline SnSe thin films was investigated using XRD, UV-VIS absorption spectroscopy, Atomic Force Microscope (AFM), and Hall effect measurements. The results of X-ray displayed that all the thin films have polycrystalline and orthorhombic structure in nature, while UV-VIS study showed that the SnSe has direct band gap of nano crystalline and it is changed from 60.12 to 94.70 nm with increasing annealing temperature. Hall effect measurements showed that all the films have a positive Hall coefficient, which means that the conductivity of the films is p-type. The conductivity of SnSe films was increased with increasing annealing temperatures (except that at 200⁰C). The I-V characteristics under illumination for the "p-SnSe/n-Si” solar cell displayed an increase in conversion efficiency with increasing annealing temperature from R.T to 150⁰C, while at 200⁰C, this efficiency was decreased. The measurements of the C-V characteristics displayed that all junctions were abrupt type. It is clear from C-V measurements that the capacitance decreased with increasing reverse bias voltage which leads to an increase in the depletion width.
In this paper an eco-epidemiological system has been proposed and studied analytically as well as numerically. The boundedness, existence and uniqueness of the solution are discussed. The local and global stability of all possible equilibrium point are investigated. The global dynamics is studied numerically. It is obtained that system has rich in dynamics including Hopf bifurcation.
This research includes depositionof thin film of semiconductor, CdSe by vaccum evaporation on conductor polymers substrate to the poly aniline where, the polymer deposition on the glass substrats by polymerization oxidation tests polymeric films and studied the structural and optical properties through it,s IR and UV-Vis , XRD addition to thin film CdSe, on of the glass substrate and on the substrate of polymer poly-aniline and when XRD tests was observed to improve the properties of synthetic tests as well as the semiconductor Hall effect proved to improve the electrical properties significantly
In the present paper, we introduce two subclasses, S*C(,,g,s,d) and TS*C(, ,g, s,d), of analytic functions . Coefficients bounds for these subclasses are calculated.
The main purpose of this article is to originate characteristic properties of the functions in the above subclasses.
The research aims to study some of the human characteristics of the state of Singapore to know the impact of these characteristics on the strength of the state, its development and. The research included two aspects, theoretical and analytical, using the descriptive analytical method, force analysis method, as well as the historical method. The data was analyzed according to mathematical equations, including the size of the country's population, the extraction of the population growth rate and the concept of age structure, where some indicators related to this concept have been explained. The researcher reached a set of results, the most important of which were: that the population size of the state of Singapore in the period between (19
... Show MoreThe study was carried out by reinforcing the resin matrix material
which was (Epoxy- Ep828) by useing Kevlar fibers and glass fibers type (E-gl ass) both or them in the form of woven roving and poly propylene tlbcrs in the form chopped strand mats. wi th (30%) volume fraction. Some mechan i cal properties of the were prepared composite specimens U ltraviolet radiation were stuied after being subjected to different weathering conditi ons i ncluded. Compression and hardness testing were carried out using Briel! method so as to compare between composite behavior i n the environments previously mentioned .
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... Show More The δ-mixing of γ-transitions in 70As populated in the 32 70 70 33 ( , ) Ge p n As γ
reaction is
calculated in the present work by using the a2-ratio methods. In one work we applied this method for two cases, the first one is for pure transition and the sacend one is for non pure transition, We take into account the experimental a2-coefficient for previous works and δ -values for one transition only.The results obtained are, in general, in a good agreement within associated errors, with those reported previously , the discrepancies that occur are due to inaccuracies existing in the experimental data of the previous works.
The δ-mixing of γ-transitions in 70As populated in the 32 70 70 33 Ge p n As (, ) γ reaction is calculated in the present work by using the a2-ratio methods. In one work we applied this method for two cases, the first one is for pure transition and the sacend one is for non pure transition, We take into account the experimental a2-coefficient for previous works and δ -values for one transition only.The results obtained are, in general, in a good agreement within associated errors, with those reported previously , the discrepancies that occur are due to inaccuracies existing in the experimental data of the previous works.