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Annealing Effect on the SnSe Nanocrystalline Thin Films and the Photovoltaic Properties of the p-SnSe/n-Si Heterojunction Solar Cells
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A thin film of SnSe were deposited by thermal evaporation technique on 400 ±20 nm thick glass substrates of these films were annealed at different temperatures (100,150,200 ⁰C), The effect of annealing on the characteristics of the nano crystalline SnSe thin films was investigated using XRD, UV-VIS absorption spectroscopy, Atomic Force Microscope (AFM), and Hall effect measurements. The results of X-ray displayed that all the thin films have polycrystalline and orthorhombic structure in nature, while UV-VIS study showed that the SnSe has direct band gap of nano crystalline and it is changed from 60.12 to 94.70 nm with increasing annealing temperature. Hall effect measurements showed that all the films have a positive Hall coefficient, which means that the conductivity of the films is p-type. The conductivity of SnSe films was increased with increasing annealing temperatures (except that at 200⁰C). The I-V characteristics under illumination for the "p-SnSe/n-Si” solar cell displayed an increase in conversion efficiency with increasing annealing temperature from R.T to 150⁰C, while at 200⁰C, this efficiency was decreased. The measurements of the C-V characteristics displayed that all junctions were abrupt type. It is clear from C-V measurements that the capacitance decreased with increasing reverse bias voltage which leads to an increase in the depletion width.

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Publication Date
Mon Feb 18 2019
Journal Name
Iraqi Journal Of Physics
Indium doped ZnO Urbach energy and dispersion parameters of thin films
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The characterization of ZnO and ZnO:In thin films were confirmed by spray pyrolysis technique. The films were deposited onto glass substrate at a temperature of 450°C. Optical absorption measurements were also studied by UV-VIS technique in the wavelength range 300-900 nm which was used to calculate the optical constants. The changes in dispersion and Urbach parameters were investigated as a function of In content. The optical energy gap was decreased and the wide band tails were increased in width from 616 to 844 eV as the In content increased from 0wt.% to 3wt.%. The single–oscillator parameters were determined also the change in dispersion was investigated before and after doping.

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Publication Date
Fri Apr 21 2023
Journal Name
Technologies And Materials For Renewable Energy, Environment And Sustainability: Tmrees22fr
Growth and characterization of bi doped Cu2S nano crystalline thin films
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Nano crystalline copper sulphide (Cu2S) thin films pure and 3% Bi doped were deposited on glass substrate by thermal evaporation technique of thickness 400±20 nm under a vacuum of ~ 2 × 10− 5 mbar to study the influence of annealing temperatures ( as-deposited, and 573) K on structural, surface morphology and optical properties of (Cu2S and Cu2S:3%Bi). (XRD) X-ray diffraction analysis showed (Cu2S and Cu2S:3%Bi) films before and after annealing are polycrystalline and hexagonal structure. AFM measurement approves that (Cu2S and Cu2S:3%Bi) films were Nano crystalline with grain size of (105.05-158.12) nm. The optical properties exhibits good optical absorption for Cu2S:3%Bi films. Decreased of optical band gap from 2.25 to 2 eV after dop

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Publication Date
Thu Apr 29 2021
Journal Name
Egyptian Journal Of Chemistry
Fabrication and Study of ZnO thin Films using Thermal Evaporation Technique
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Pure SnSe thin film and doped with S at different percentage (0,3,5,7)% were deposited from alloy by thermal evaporation technique on glass substrate at room temperature with 400±20nm thickness .The influences of S dopant ratio on characterization of SnSe thin film Nano crystalline was investigated by using Atomic force microscopy(AFM), X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), Hall Effect measurement, UV-Vis absorption spectroscopy to study morphological, structural, electrical and optical properties respectively .The XRD showed that all the films have polycrystalline in nature with orthorhombic structure, with preferred orientation along (111)plane .These films was manufactured of very fine crystalline size in the ra

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Publication Date
Wed Dec 30 2020
Journal Name
Iraqi Journal Of Science
The Potential Barrier and Thermal Stability Dependence on PI Thickness of Al/PI/c-Si Schottky Diode
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This research investigated the effectiveness of using different thickness values of polyimide (PI) interfacial layer in order to improve electrical and thermal properties of Al/ PI /c-Si capacitor. The PI spectra produced by poly(amic acid) (PAA) were characterized by using FT-IR analysis. After imidization of PAA, some absorption peaks vanished, whereas PI peaks appeared, due to the complete conversion of PAA to PI.

    The results show that thermal decomposition resistance of polyimide films increases with the increase of polyimide thickness, because of the increase of the imide bond and the decrease of the average distance between amide groups.

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Publication Date
Tue Sep 25 2018
Journal Name
Iraqi Journal Of Science
Influence the number of laser pulses and annealed temperature and the Structure and optical properties of In2O3: CdO films prepared laser induce plasma
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In this Research, (In2O3: CdO) films were prepared using pulsed laser deposition (PLD) method on glass substrate at room temperature deposited at laser influence 500mJ/cm2with different shoots N= (200,300,400,500and600). the structural, and the optical properties and the films are studied with different annealing temperatures (523and 623) K. Optical measurements and the films were analyzed by UV-VIS absorption spectra. The structural properties of samples were investigated by x-ray diffraction patterns of the films and show that the films and polycrystalline Structure with all shoots. Transmittance spectrum found is equal to 93.17%, refractive index range is 1.635 and energy gap range is 2.75-3.15ev.

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Publication Date
Fri Feb 08 2019
Journal Name
Iraqi Journal Of Laser
Random Number Generation for Quantum Key Distribution Systems Based on Shot-Noise Fluctuations in a P-I-N Photodiode
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A simple setup of random number generator is proposed. The random number generation is based on the shot-noise fluctuations in a p-i-n photodiode. These fluctuations that are defined as shot noise are based on a stationary random process whose statistical properties reflect Poisson statistics associated with photon streams. It has its origin in the quantum nature of light and it is related to vacuum fluctuations. Two photodiodes were used and their shot noise fluctuations were subtracted. The difference was applied to a comparator to obtain the random sequence.

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Publication Date
Thu May 18 2023
Journal Name
Journal Of Engineering
Effect of Cryogenic Trteatment on the Tensile Properties of Carbon Dual Phase Steel
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The aim of this study was to evaluate tensile properties of low and medium carbon ferrite -martensite dual phase steel, and the effect cryogenic treatment at liquid nitrogen temperature (-196 ºC) on its properties. Low carbon steel (C12D) and medium carbon steels (C32D & C42D) were used in this work. For each steel grade, five groups of specimens were prepared according to the type of heat treatment. The first group was normalized, the second group was normalized and subsequently subjected to cryogenic treatment then tempered at (200 ºC) for one hour, the third group was quenched from intercritical annealing temperature of (760 ºC) to obtain dual phase (DP) steel, the fourth and fifth groups were both quenched from (760 ºC), but

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Crossref
Publication Date
Sun Mar 01 2015
Journal Name
Journal Of Engineering
Effect of Initial Water Content on the Properties of Compacted Expansive Unsaturated Soil
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Unsaturated soil can raise many geotechnical problems upon wetting and drying resulting in swelling upon wetting and collapsing (shrinkage) in drying and changing in the soil shear strength. The classical principles of saturated soil are often not suitable in explaining these phenomena. In this study, expansive  soil (bentonite and sand) were tested in different water contents and dry unit weight chosen from the compaction curve to examine the effect of water content change on soil properties (swelling pressure, expansion index, shear strength (soil cohesion) and soil suction by the filter paper method). The physical properties of these soils were studied by conducting series of tests in laboratory. Fitting methods

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Publication Date
Sun Mar 04 2012
Journal Name
Baghdad Science Journal
Effect of Fat Replacement with Tahena on the Quality Properties of Shortened Cake
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The objective of this research was to investigate the effect of replacing fat(shortening) with different percentages of tahena on the quality properties (physiochemical and sensory ) of shortened cake.The percentages of moisture,protein ,fat and ash of cake increased significantly(p<0.05) as the replacement was increased .The highest increase percentages were 10,48,5,and 90 %,respectivly, at 100% replacement .Carbohydrate,however,decreased by 10%at 100% replacement .these findings may indicate improvement of cake nutritional value.Standing height,as an indicator of cake volume, also increased significantly by 4% at the 50% replacement then it decreased by 4% 100% replacement level. Basic formula (control) has signific

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Publication Date
Sat Dec 01 2012
Journal Name
Iraqi Journal Of Physics
The effect of additive carbon nano tube on optical properties of epoxy resin
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In this work, MWCNT in the epoxy can be prepared at room temperature and thickness (1mm) at different concentration of CNTs powder. Optical properties of multi-walled carbon nanotubes (CNTs) reinforced epoxy have been measured in the range of (300-800)nm. The electronic transition in pure epoxy and CNT/epoxy indicated direct allowed transition. Also, it is found that the energy gap of epoxy is 4.1eV and this value decreased within range of (4.1-3.5)eV when the concentration of CNT powder increased from (0.001-0.1)% respectively.
The optical constants which include (the refractive index (n), the extinction coefficient (k), real (ε1) and imaginarily (ε2) part of dielectric constant calculated in the of (300-800)nm at different concent

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