In the last few years, the literature conferred a great interest in studying the feasibility of using memristive devices for computing. Memristive devices are important in structure, dynamics, as well as functionalities of artificial neural networks (ANNs) because of their resemblance to biological learning in synapses and neurons regarding switching characteristics of their resistance. Memristive architecture consists of a number of metastable switches (MSSs). Although the literature covered a variety of memristive applications for general purpose computations, the effect of low or high conductance of each MSS was unclear. This paper focuses on finding a potential criterion to calculate the conductance of each MMS rather than the whole conductance as reported in the literature. Anti-Hebbian and Hebbian (AHaH) learning rules are used to mimic the changes in memristance of the memristors. This research will concentrate on the effect of conductance on an individual MSS to simulate the nanotechnology devices of the memristors. A single synapse is presented by a couple of memristors to mimic its resistance switching. The learning circuit of artificial synapses could be used in many applications, such as image processing and neural networks, for pattern classification of synapses, represented by a map of the memeristors. These synapses are essential elements for data processing and information storage in both real and artificial neural systems.
