Optical Mark Recognition (OMR) is an important technology for applications that require speedy, high-accuracy processing of a huge volume of hand-filled forms. The aim of this technology is to reduce manual work, human effort, high accuracy in assessment, and minimize time for evaluation answer sheets. This paper proposed OMR by using Modify Bidirectional Associative Memory (MBAM), MBAM has two phases (learning and analysis phases), it will learn on the answer sheets that contain the correct answers by giving its own code that represents the number of correct answers, then detection marks from answer sheets by using analysis phase. This proposal will be able to detect no selection or select more than one choice, in addition, using MBAM make it timeless because it will deal with a complete answer sheet, it no need to extract the answer boxes from the answers sheet. The proposed OMR exhibits accuracy is 99.998% in the recognition of marked and non-marked.
In the present work we prepared heterojunction not homogenous CdS/:In/Cu2S) by spray and displacement methods on glass substrate , CdS:In films prepared by different impurities constration. Cu2S prepared by chemical displacement method to improve the junction properties , structural and optical properties of the deposited films was achieved . The study shows that the film polycrystalline by XRD result for all film and the energy gap was direct to 2.38 eV with no effect on this value by impurities at this constration .
Thin films of pure tin mono-sulfide SnS and tin mono-sulfide for (1,2,3,4)% fluorine SnS:F with Thicknesses of (0.85 ±0.05) ?m and (0.45±0.05) ?m respectively were prepared by chemical spray pyrolysis technique. the effect of doping of F on structural and optical properties has been studied. X-Ray diffraction analysis showed that the prepared films were polycrystalline with orthorhombic structure. It was found that doping increased the intensity of diffraction peaks. Optical properties of all samples were studied by recording the absorption and transmission spectrum in range of wave lengths (300-900) nm. The optical energy gap for direct forbidden transi
... Show MoreThe growing demand for optical fibers is due to their superior the ability to transmit information with high efficiency and minimal loss across extensive distances. In this study, four optical fibers with core radii ranging from (2.05-5.05) μm, and with a numerical aperture of 0.1624 were analyzed. The modal properties of these fibers were calculated at a wavelength of 1030 nm using the RP Fiber Calculator software (free version 2025). Furthermore, the impact of increasing the core radius on these properties was examined. The results showed that multimode fibers are formed when the core radius is much larger than the wavelength used. In contrast, single-mode fiber is obtained when th
Alloys of InxSe1-x were prepared by quenching technique with
different In content (x=10, 20, 30, and 40). Thin films of these alloys
were prepared using thermal evaporation technique under vacuum of
10-5 mbar on glass, at room temperature R.T with different
thicknesses (t=300, 500 and 700 nm). The X–ray diffraction
measurement for bulk InxSe1-x showed that all alloys have
polycrystalline structures and the peaks for x=10 identical with Se,
while for x=20, 30 and 40 were identical with the Se and InSe
standard peaks. The diffraction patterns of InxSe1-x thin film show
that with low In content (x=10, and 20) samples have semi
crystalline structure, The increase of indium content to x=30
decreases degree o
This paper reports the effect of Mg doping on structural and optical properties of ZnO prepared by pulse laser deposition (PLD). The films deposited on glass substrate using Nd:YAG laser (1064 nm) as the light source. The structure and optical properties were characterized by X-ray diffraction (XRD) and transmittance measurements. The films grown have a polycrystalline wurtzite structure and high transmission in the UV-Vis (300-900) nm. The optical energy gap of ZnO:Mg thin films could be controlled between (3.2eV and 3.9eV). The refractive index of ZnO:Mg thin films decreases with Mg doping. The extinction coefficient and the complex dielectric constant were also investigate.