In the present research, the electrical properties which included the ac-conductivity (σac), loss tangent of dielectric (tan δ) and real dielectric constant (ε’) are studied for nano polycarbonate in different pressures and frequencies as a function of temperature these properties were studied at selective temperature gradients which are (RT-50-100-150-250)°C. The results of the study showed that the values of dielectric constant and dissipation factor increase with increasing pressure and temperature and decreases by increasing frequency. And the results of electrical conductivity showed that it increases with increasing temperature, pressure and frequency.
Bubbled slabs can be exposed to damage or deterioration during its life. Therefore, the solution for strengthening must be provided. For the simulation of this case, the analysis of finite elements was carried out using ABAQUS 2017 software on six simply supported specimens, during which five are voided with 88 bubbles, and the other is solid. The slab specimens with symmetric boundary conditions were of dimensions 3200/570/150 mm. The solid slab and one bubbled slab are deemed references. Each of the other slabs was exposed to; (1) service charge, then unloaded (2) external prestressing and (3) loading to collapse under two line load. The external strengthening was applied using prestressed wire with four approaches, wh
... Show MoreBackground: Determination of local bone mineral density (BMD) immediately after implant insertion play an important role in implant success rate, may offer comprehensive description of the bone, and give enough information to the surgeon prior to implant insertion and at follow up status. The aim of the present study is to evaluate the changes of local bone density in the dental implant recipient sites by using computerized tomography. Material and method: The sample consisted of (20) dental implants recipient sites, bone density assessment was done twice, immediately after implants insertion and after six months. Results: The mean HU of the bone around the implant insertion site, immediately after implant placement was 552.28 HU, and inc
... Show MoreIt is believed that Organizations around the world should be prepared for the transition to IPv6 and make sure they have the " know how" to be able to succeed in choosing the right migration to start time. This paper focuses on the transition to IPv6 mechanisms. Also, this paper proposes and tests a deployment of IPv6 prototype within the intranet of the University of Baghdad (BUniv) using virtualization software. Also, it deals with security issues, improvements and extensions of IPv6 network using firewalls, Virtual Private Network ( VPN), Access list ( ACLs). Finally, the performance of the obtainable intrusion detection model is assessed and compared with three approaches.
We demonstrate the results of a mathematical model for investigation the nonlinear Stimulated Brillouin Scattering (SBS), which can be employed to achieve high optical amplifier. The SBS is created by interaction between the incident We demonstrate the results of a mathematical model for investigation the nonlinear Stimulated Brillouin Scattering (SBS), which can be employed to achieve high optical amplifier. The SBS is created by interaction between the incident light and the acoustic vibration fiber. The design criteria and the amplification characteristic of the Brillouin amplifier is demonstrated and discussed for fiber Brillouin amplifier using different pump power with different fiber length. The results show, high Brillouin gain can
... Show MoreIn this work, porous silicon gas sensor hs been fabricated on n-type crystalline silicon (c-Si) wafers of (100) orientation denoted by n-PS using electrochemical etching (ECE) process at etching time 10 min and etching current density 40 mA/cm2. Deposition of the catalyst (Cu) is done by immersing porous silicon (PS) layer in solution consists of 3ml from (Cu) chloride with 4ml (HF) and 12ml (ethanol) and 1 ml (H2O2). The structural, morphological and gas sensing behavior of porous silicon has been studied. The formation of nanostructured silicon is confirmed by using X-ray diffraction (XRD) measurement as well as it shows the formation of an oxide silicon layer due to chemical reaction. Atomic force microscope for PS illustrates that the p
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