A single-crystalline semi-polar gallium nitride (11-22) was grown on m-plane (10-10) sapphire substrate by metal organic chemical vapor deposition. Three-step approach was introduced to investigate the grain size evolution for semi-polar (11-22) GaN. Such approach was achieved due to the optimized gallium to ammonia ratio and temperature variations, which led to high quality (11-22) oriented gallium nitride epilayers. The full width at half maximum values along (-1-123) and (1-100) planes for the overgrowth temperature of 1080°C were found to be as low as 0.37° and 0.49°, respectively. This was an indication of the enhanced coalescence and reduction in root mean square roughness as seen by atomic force microscopy. Surface analysis via atomic force microscopy indicated the orientation towards semi-polar plane. Field emission scanning electron microscopy analysis further indicates that higher temperature of 1080°C during the deposition of the overgrowth promoted closely packed surface coalescence. Room temperature Raman revealed that the overgrowth temperature of 1080°C portrayed compressive strain free as compared to other overgrowth temperature. Based on these results, the promising overgrowth temperature of 1080°C can be further utilized in future work for optoelectronics devices.
The purpose of this work is to study the classification and construction of (k,3)-arcs in the projective plane PG(2,7). We found that there are two (5,3)-arcs, four (6,3)-arcs, six (7,3)arcs, six (8,3)-arcs, seven (9,3)-arcs, six (10,3)-arcs and six (11,3)-arcs. All of these arcs are incomplete. The number of distinct (12,3)-arcs are six, two of them are complete. There are four distinct (13,3)-arcs, two of them are complete and one (14,3)-arc which is incomplete. There exists one complete (15,3)-arc.
In the present work, We study the structural and optical properties of (ZnO), which are prepared by thermal evaporation technique, where deposit (Zn) on glass substrates at different thicknesses (150,250,350)nm, deposited on glass substrate at R.T. with rate (5 nm sec-1). And then we make oxidation for (Zn) films at temperature (500) and using the air for one hour, and last annealing samples at temperature (400,500) for one hour. The investigation of (XRD) indicates that the (ZnO) films are polycrystalline type of hexagonal with a preferred orientation along (002) to all samples and analysis reveals that the intensity of this orientation increases with the increase of the thickness and annealing temperature.  
... Show MoreThe conductance of solu ti ons of cysteine in water at different concentrations and temperatures has been measured. These solutions obey Onsagcr equation and give linear relations especially at low concentrations. In more concentrated solutions a deviation from the equation is observed.
The molar conductivity of these solutions decreases with t he increase in concen trations at constant temperature.
The values of the ionization constants and the conductivity at infin ite
dilution for each temperature have been calcu lated.
In this research, analytical study for simulating a Fabry-Perot bistable etalon (F-P cavity) filled with a dispersive optimized nonlinear optical material (Kerr type) such as semiconductors Indium Antimonide (InSb). An optimization procedure using reflective (~85%) InSb etalon (~50µm) thick is described. For this etalon with a (50 µm) spot diameter beam, the minimum switching power is (~0.078 mW) and switching time is (~150 ns), leading to a switching energy of (~11.77 pJ) for this device. Also, the main role played by the temperature to change the etalon characteristic from nonlinear to linear dynamics.
A nanocrystalline CdS thin film with 100 nm thickness has been prepared by thermal evaporation technique on glass substrate with substrate temperature of about 423 K. The films annealed under vacuum at different annealing temperature 473, 523 and 573 K. The X-ray diffraction studies show that CdS thin films have a hexagonal polycrystalline structure with preferred orientation at (002) direction. Our investigation showed the grain size of thin films increased from 9.1 to 18.9 nm with increasing the annealing temperature. The optical measurements showed that CdS thin films have direct energy band gap, which decreases with increasing the annealing temperature within the range 3.2- 2.85 eV. The absorbance edge is blue shifted. The absorption
... Show MoreIn this work, we construct and classify the projectively distinct (k,3)-arcs in PG(2,9), where k ≥ 5, and prove that the complete (k,3)-arcs do not exist, where 5 ≤ k ≤ 13. We found that the maximum complete (k,3)-arc in PG(2,q) is the (16,3)-arc and the minimum complete (k,3)-arc in PG(2,q) is the (14,3)-arc. Moreover, we found the complete (k,3)-arcs between them.
In humans, Pseudomonas aeruginosa is the second most frequent gram negative nosocomial pathogen in hospitals and has the highest case-fatality rate of all hospital-acquired bacteremia because of the hardy resistance of these bacteria to mechanical cleansing as well as to disinfectant, and many antibiotics. The susceptibility of bacteria against the antibiotics is modulated by several local factors such as temperature which modified drug efficacy, so this study was carried out to evaluate the effect of different temperature (20,42,45)Ċon the susceptibility of Pseudomonas aeruginosa to the minimum inhibitory concentrations (MIC) of the antimicrobial agents before and after irradiation. The samples collected from 150 persons suffering from
... Show Morea-Ge: As thin films have prepared by thermal evaporation teclmique, then they were annealing at various temperatures within the
range (373-473) K. The result of X-ray di ffraction spectrum was showing that all the specimens remained in amorphous structure before and after annealing process. This paper studied the effect of annealing temperature as a function of wavelength on the optical energy gap and optical constants for the a-Ge:As thin films . Results have showed that there was an increasing in the optical energy gap
{Egopt) values with the in ,;rcasing of the annealing temperatures within
... Show More