Porous silicon (PS) layers are prepared by anodization for
different etching current densities. The samples are then
characterized the nanocrystalline porous silicon layer by X-Ray
Diffraction (XRD), Atomic Force Microscopy (AFM), Fourier
Transform Infrared (FTIR). PS layers were formed on n-type Si
wafer. Anodized electrically with a 20, 30, 40, 50 and 60 mA/cm2
current density for fixed 10 min etching times. XRD confirms the
formation of porous silicon, the crystal size is reduced toward
nanometric scale of the face centered cubic structure, and peak
becomes a broader with increasing the current density. The AFM
investigation shows the sponge like structure of PS at the lower
current density porous begi

Background: techniques of image analysis have been used extensively to minimize interobserver variation of immunohistochemical scoring, yet; image acquisition procedures are often demanding, expensive and laborious. This study aims to assess the validity of image analysis to predict human observer’s score with a simplified image acquisition technique. Materials and methods: formalin fixed- paraffin embedded tissue sections for ameloblastomas and basal cell carcinomas were immunohistochemically stained with monoclonal antibodies to MMP-2 and MMP-9. The extent of antibody positivity was quantified using Imagej® based application on low power photomicrographs obtained with a conventional camera. Results of the software were employed

Simulated annealing (SA) has been an effective means that can address difficulties related to optimization problems. is now a common discipline for research with several productive applications such as production planning. Due to the fact that aggregate production planning (APP) is one of the most considerable problems in production planning, in this paper, we present multi-objective linear programming model for APP and optimized by . During the course of optimizing for the APP problem, it uncovered that the capability of was inadequate and its performance was substandard, particularly for a sizable controlled problem with many decision variables and plenty of constraints. Since this algorithm works sequentially then the current state wi

This work introduces the synthesis and the characterization of N-doped TiO2 and Co3O4 thin films prepared via DC reactive magnetron sputtering technique. N-doped TiO2 thin films was deposited on indium-tin oxide (ITO) conducting substrate at different nitrogen ratios, then the Co3O4 thin film was deposited onto the N-doped TiO2 layer to synthesize a double-layer TiO2-N/Co3O4 Photoelectrochromic device. Several techniques were used to characterize the produces which are x-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM), Fourier-transform infrared (FTIR) spectroscopy and UV–Vis spectroscopy. The Photoelectrochromic device was characterized by UV–Vis spectroscopy and the results show that the double-layer N-dope