In this work, (Cu1-xAgx)2ZnSnSe4 (CAZTSe) alloys with various silver content (x= 0.0, 0.1and 0.2) have been prepared by reacting their high purity elements (Cu, Ag, Zn, Sn and Se) in an evacuated quartz tube under pressure of 10 -3Torr. The composition of the prepared alloys was determined by energy dispersive X-ray spectroscopy (EDXS) analysis, the results were close to the theoretical values. CAZTSe thin films with a thickness of 800 nm were deposited by thermal evaporation technique on glass substrates at room temperature (RT) with a deposition rate of 0.53nm/sec. Similarly, CdS thin films were deposited with a thickness of 100 nm on the same substrates at RT with a deposition rate of 0.3nm/sec from ready-made CdS alloy powder. All prepared thin films were annealed at temperatures of 373K and 473K under vacuum (10-3Torr) for 1h. X-ray analysis showed that all CAZTSe alloys and their thin films were polycrystalline and have the tetragonal structure with preferential orientation in the (112) direction, while all thin CdS films were polycrystalline and have the hexagonal structure with preferential orientation in the (002) direction. The scanning electron microscopy (SEM) technique was used to study the surface morphology of all prepared CAZTSe films, while the atomic force microscopy (AFM) technique was used to study the surface topography of all prepared CAZTSe and CdS films. SEM results revealed that CAZTSe films had uniform surface features with irregular sized grains, while AFM results showed that the surface roughness and the average grain size of CAZTSe and CdS thin films increased with increasing Ag content for CAZTSe thin films and annealing temperature for CAZTSe and CdS thin films. The absorbance and transmittance spectra for CAZTSe and CdS thin films were recorded in the wavelength ranges of (400-1100) nm and (350- 1100) nm, respectively. Optical measurements showed that all CAZTSe and CdS thin films have a direct energy gap (Eg) that decreased with increasing silver content for CAZTSe thin films and annealing temperature (Ta) for both types of prepared thin films, so it decreased from 1.73 eV to1.5 eV when x content increased from 0.0 to 0.2 and decreased from 1.5 eV to1.46 eV and from 2.47 eV to 2.38 eV when Ta increased from RT to 473K for CAZTSe thin films with x content equal to 0.2 and CdS thin films, respectively. Optical constants such as extinction coefficient, refractive index and dielectric constant were calculated for all prepared thin films. The measurements of the electrical properties for prepared films showed that the D.C electrical conductivity (σd.c) increased with increasing Ag content for CAZTSe thin films and annealing temperature for both types of thin films. So the electrical conductivity changed from 1.1276*10-2 (Ω.cm)-1 to 28.9266*10-2 (Ω.cm)-1 when x changed from 0.0 to 0.2 and changed from 28.9266*10-2 (Ω.cm)-1 to 57.4599*10-2 (Ω.cm)-1 and from 4.0476*10-4 (Ω.cm)-1 to 9.4227*10-4 (Ω.cm)-1 when Ta changed from RT to 473K for CAZTSe thin films with Ag content equal to 0.2 and CdS thin films, respectively. The prepared thin films have two activation energies (Ea1 & Ea2) in the temperature ranges of (318-488)K and (313-443)K for CAZTSe and CdS films, respectively. The results of Hall effect for CAZTSe thin films showed that all films were of acceptor type and the concentration of holes in them decreased with increasing silver content and annealing temperature, while CdS thin films were of donor type and the concentration of electrons in them increased with increasing annealing temperature. In this research, solar cells were fabricated from CdS/CAZTSe/Si structurThe C-V measurements revealed that all prepared heterojunctions were of the abrupt type and the junction capacitance and carrier concentration reduced while the width of depletion region and the built-in potential increased with increasing the silver content and annealing temperature. The current-voltage characteristics under dark condition of CAZTSe heterojunctions showed that both the ideality factor and saturation current decreased with increasing Ag content and annealing temperature. While,The current-voltage characteristics under dark condition of CAZTSe heterojunctions showed that both the ideality factor and saturation current decreased with increasing Ag content and annealing temperature. While, the current-voltage measurements under illumination showed that the performance of heterojunction solar cell improved with increasing Ag content and annealing temperature. The result indicated that the prepared solar cell with 0.2 Ag content and 473K annealing temperature exhibited the highest efficiency (η = 2.827%) compared to other prepared solar cells
The aim of the research is a techno-economic analysis of the use of concentrated solar energy technologies in the Iraqi city, considering the concentrated solar energy technology is a renewable energy technology that derives its resources from the sun and is replenished at a rate that exceeds its use. It is also inexhaustible and environmentally friendly energy from its environmental footprint, unlike traditional fossil energy which produces greenhouse gases and a major cause of global warming.
This research measures the costs of concentrated solar energy technology to Reduce the effects caused by other energies and work to fill part of the shortfall in the total electricity production, even at a specific percentage, in preparati
... Show MoreIn this work, ZnS thin films have been deposited by developed laser deposition technique on glass substrates at room temperature. After deposition process, the films were annealed at different temperatures (200ºC , 300 ºC and 400ºC ) using thermal furnace.The developed technique was used to obtain homogeneous thin films of ZnS depending on vaporization of this semiconductor material by continuous CO2 laser with a simple fan to ensure obtaining homogeneous films. ZnS thin films were annealed at temperature 200ºC, 300 ºC and 400ºC for (20) minute in vacuum environment. Optical properties of ZnS thin film such as absorbance, transmittance, reflectance, optical band gap, refractive index extinction coefficient and absorption coefficien
... Show Morethe structrual and mechanical properties of thin Ni films of different thicknesses deposited on coring glass substrate using lonbeam sputtering(IBS) technique under vacuum torr have been studied the TEM and electron
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The study is dealing with an application reengineering process clean solar cells in the Ministry of electricity, as aimed at the possibility of the applicability and impact of re-engineering to achieve the level of performance of the Ministry's operations, with the application of the cleaning process solar cells, developed, improved and found a correlation, statistically significant effect between variable re-engineering and performance as well as the application of process reengineering clean solar cells:1- Before the re-engineering process the total time for cleaning up and solar cell 20 minutes and number of columns performed per day 24 columns and total columns750 which were completed per month that re
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A new 4-thiazolidinone, substitutedbenzylidene-thiazolidinone and tetrazole were synthesized from thiosemicarbazone and hydrazone. The thiosemicarbazone was prepared by the reaction of thiosemicarbazide with aldehyde derivative from L-ascorbic acid in absolute ethanol using glacial acetic acid as a catalyst. 1, 3-thiazolidin-4-ones were synthesized from the condensation of thiosemicarbazones with chloroacetic acid in presence of anhydrous sodium acetate. A 1, 3- thiazolidine-4-one was reaction with several 4-substitutedaldehydes to produce new derivatives with a double bond at the position-5 of the 4-thiazolidinone ring. While the tetrazole compounds were synthesized by 1, 3-cycloaddition reaction of sodium azide and hydrazone compounds in
... Show MoreIn this study, new oxazolidinone and thiazolidinone derivatives were synthesized through a three-step process. In the first step, o-aminothiophenol was reacted with p-aminobenzoic acid in hydrochloric acid to produce an amine containing a thiazole ring, achieving a product yield of 80%. The second step involves synthesizing Schiff bases (E1-E4) by reacting 4-(benzo[d]thiazol-2-yl)aniline with various aromatic aldehydes in the presence of glacial acetic acid. This reaction yields products of 76% to 90%. In the third step, the Schiff derivatives (E1-E4) are reacted with glycolic acid and thioglycolic acid to obtain the desired products. Oxazolidinone derivatives (N1-T1) were produced with rates ranging from 66% to 74%, while thiazolidin
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The efficient behavior of a low-concentrating photovoltaic-thermal system with a micro-jet channel (LCPV/T-JET) and booster mirror reflector is experimentally evaluated here. Micro-jets promote the thermal management of PV solar cells by implementing jet water as active cooling, which is still in the early stages of development. The booster mirror reflector concentrates solar irradiance into solar cells and improves the thermal, electrical, and combined efficiencies of the LCPV/T-JET system. The LCPV/T-JET system was tested under ambient weather conditions in the city of Bangi, Selangor, Malaysia, and all data was recorded between 10:00 a.m. and 4:00 p.m. Parametric studies were conducted to compare the performance of the LCPV/T-JET system
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Increased diseases and obesity currently due to increased production and excessive consumption of foods manufactured from non-food sweeteners without attention to the risk of consuming those additional high calories due to consuming these refreshing products such as juices and other various drinks, especially in the summer season by most segments of Iraqi society, especially workers, children and school students the aim of this study. Therefore, the study designed to replace sucrose with 0.03, 0.04 and 0.05% of each of the white stevia crystals and milled dry stevia leaves in the laboratory manufacture of juices and its effect on the general and sensory characteristics and the extent of their acceptability among the specialized r
... Show MoreFabrication of solar cell prepared by thermal spray and vacuum thermal evaporation method on silicon wafer(n-type) and studying its efficiency. The film have been deposited on three layers(ZnO then CdS and CdTe) on Si and glass respectively.Direct energy gap was calculated and equal to (4.3,3.4,3)eV and indirect energy gap equal to (3.5,2.5,1.5)eV respectively . Efficiency was calculated for the cell of area 2cm2 it was equal to 0.14%.