In this work, (Cu1-xAgx)2ZnSnSe4 (CAZTSe) alloys with various silver content (x= 0.0, 0.1and 0.2) have been prepared by reacting their high purity elements (Cu, Ag, Zn, Sn and Se) in an evacuated quartz tube under pressure of 10 -3Torr. The composition of the prepared alloys was determined by energy dispersive X-ray spectroscopy (EDXS) analysis, the results were close to the theoretical values. CAZTSe thin films with a thickness of 800 nm were deposited by thermal evaporation technique on glass substrates at room temperature (RT) with a deposition rate of 0.53nm/sec. Similarly, CdS thin films were deposited with a thickness of 100 nm on the same substrates at RT with a deposition rate of 0.3nm/sec from ready-made CdS alloy powder. All prepared thin films were annealed at temperatures of 373K and 473K under vacuum (10-3Torr) for 1h. X-ray analysis showed that all CAZTSe alloys and their thin films were polycrystalline and have the tetragonal structure with preferential orientation in the (112) direction, while all thin CdS films were polycrystalline and have the hexagonal structure with preferential orientation in the (002) direction. The scanning electron microscopy (SEM) technique was used to study the surface morphology of all prepared CAZTSe films, while the atomic force microscopy (AFM) technique was used to study the surface topography of all prepared CAZTSe and CdS films. SEM results revealed that CAZTSe films had uniform surface features with irregular sized grains, while AFM results showed that the surface roughness and the average grain size of CAZTSe and CdS thin films increased with increasing Ag content for CAZTSe thin films and annealing temperature for CAZTSe and CdS thin films. The absorbance and transmittance spectra for CAZTSe and CdS thin films were recorded in the wavelength ranges of (400-1100) nm and (350- 1100) nm, respectively. Optical measurements showed that all CAZTSe and CdS thin films have a direct energy gap (Eg) that decreased with increasing silver content for CAZTSe thin films and annealing temperature (Ta) for both types of prepared thin films, so it decreased from 1.73 eV to1.5 eV when x content increased from 0.0 to 0.2 and decreased from 1.5 eV to1.46 eV and from 2.47 eV to 2.38 eV when Ta increased from RT to 473K for CAZTSe thin films with x content equal to 0.2 and CdS thin films, respectively. Optical constants such as extinction coefficient, refractive index and dielectric constant were calculated for all prepared thin films. The measurements of the electrical properties for prepared films showed that the D.C electrical conductivity (σd.c) increased with increasing Ag content for CAZTSe thin films and annealing temperature for both types of thin films. So the electrical conductivity changed from 1.1276*10-2 (Ω.cm)-1 to 28.9266*10-2 (Ω.cm)-1 when x changed from 0.0 to 0.2 and changed from 28.9266*10-2 (Ω.cm)-1 to 57.4599*10-2 (Ω.cm)-1 and from 4.0476*10-4 (Ω.cm)-1 to 9.4227*10-4 (Ω.cm)-1 when Ta changed from RT to 473K for CAZTSe thin films with Ag content equal to 0.2 and CdS thin films, respectively. The prepared thin films have two activation energies (Ea1 & Ea2) in the temperature ranges of (318-488)K and (313-443)K for CAZTSe and CdS films, respectively. The results of Hall effect for CAZTSe thin films showed that all films were of acceptor type and the concentration of holes in them decreased with increasing silver content and annealing temperature, while CdS thin films were of donor type and the concentration of electrons in them increased with increasing annealing temperature. In this research, solar cells were fabricated from CdS/CAZTSe/Si structurThe C-V measurements revealed that all prepared heterojunctions were of the abrupt type and the junction capacitance and carrier concentration reduced while the width of depletion region and the built-in potential increased with increasing the silver content and annealing temperature. The current-voltage characteristics under dark condition of CAZTSe heterojunctions showed that both the ideality factor and saturation current decreased with increasing Ag content and annealing temperature. While,The current-voltage characteristics under dark condition of CAZTSe heterojunctions showed that both the ideality factor and saturation current decreased with increasing Ag content and annealing temperature. While, the current-voltage measurements under illumination showed that the performance of heterojunction solar cell improved with increasing Ag content and annealing temperature. The result indicated that the prepared solar cell with 0.2 Ag content and 473K annealing temperature exhibited the highest efficiency (η = 2.827%) compared to other prepared solar cells
The reaction of 2-amino benzoic acid with 1,2-dichloroethane under reflux in methanol and KOH as a base to gave the precursor [H4L]. The precursor under reflux and drops of CH3COOH which reacted with (2mole) from salicycaldehyde in methanol to gave a new type N2O4 ligand [H2L], this ligand was reacted with (MCl2) Where [M= Co (II), Ni(II), Cu(II) and Zn(II)] in (1:1) ratio at reflux in methanol using KOH as a base, to give complexes of the general formula [M(L)]. All compounds have been characterized by spectroscopic methods [1H NMR ( just to the ligand), FTIR, uv-vis, atomic absorption], melting point, conductivity, chloride content, as well as m
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This work represents the preparation of the starting material, 3-chloro-2-oxo-1,4-dithiacyclohexane (S) using a new method. This material was reacted with, 4-phenylthiosemicarbazide to give (H3NS3) as a tetradentate ligand H3L. New complex of rhenium (V) with this ligand of the formula [ReO(L)] was prepared. New complexes of the general formula [M(HL)] of this ligand when reacted with some metal ions where: M = Ni(II), Cu(II), Cd(II), Zn(II), Hg(II) have been reported. The ligand and the complexes were characterized by infrared, ultraviolet–visible, mass, 1H nuclear magnetic resonance and atomic absorption spectroscopic techniques and by (HPLC), elemental analysis, and electrical conductivity. The proposed structure for H3L with Re (V) i
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The reaction of [Benzoyl hydrazine] with [Diphenyl mono oxime] and Glacial acetic acid was carried out in methanol gave a new tridentate ligand [Benzoic acid (2- hydroxyimino- 1, 2-diphyneylethylidene) - hydrazide]. This ligand was reacted with some metal ions (Fe(II), Co(II), Ni(II), and Cu(II)) in methanol with (1:1) metal : ligand ratio to give a series of new complexes of the general formula [M(L)Cl2.H2O], where M= Fe(11), Co(11), Ni(11) and Cu(11) . All compounds were characterized by spectroscopic methods (I.R, UV-Vis), elemental microanalysis (C.H.N), atomic absorption, magnetic susceptibility, and conductivity measurements. From the obtained data the proposed molecular structures were suggested for the complexes of Fe (II), Co (II)
... Show MoreThe reaction of [Benzoyl hydrazine] with [Diphenyl mono oxime] and Glacial acetic acid was carried out in methanol gave a new tridentate ligand [Benzoic acid (2-hydroxyimino- 1, 2-diphyneylethylidene) - hydrazide]. This ligand was reacted with some metal ions (Fe(II), Co(II), Ni(II), and Cu(II)) in methanol with (1:1) metal : ligand ratio to give a series of new complexes of the general formula [M(L)Cl2.H2O], where M= Fe(11), Co(11), Ni(11) and Cu(11). All compounds were characterized by spectroscopic methods (I.R, UV-Vis), elemental microanalysis (C.H.N), atomic absorption, magnetic susceptibility, and conductivity measurements. From the obtained data the proposed molecular structures were suggested for the complexes of Fe
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Nanocomposite was prepared using unsaturated polyester (UP) resin as a matrix and graphene nanoparticles as a reinforcement material in six percentage weights (0, 0.1, 0.2, 0.3, 1 and 1.5%). Mechanical, calorimetric and thermal studies were performed on the (UP) resin/graphene nanocomposite. All tests showed a clear improvement of all mechanical properties examined (hardness, flexural strength (F.S), impact strength (I.S) and tensile strength (T.S)) with increasing graphene percentage. In addition, the temperature of glass transition and thermal conductivity of this composite increased with increasing graphene content.
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In this work, porous Silicon structures are formed with photochemical etching process of n-type Silicon(111) wafers of resistivity (0.02.cm) in hydrofluoric acid (HF) of concentration (39%wt) under light source of tungeston halogen lamp of (100 Watt) power. Samples were anodized in a solution of 39%HF and ethanol at 1:1 for 15 minutes. The samples were realized on n-type Si substrates Porous Silicon layers of 100m thickness and 30% of porousity. Frequency dependence of conductivity for Al/PSi/Si/Al sandwich form was studied. A frequency range of 102-106Hz was used allowing an accurate determination of the impedance components. Their electronic transport parameters were determined using complex impedance measurements. These measu
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The new compounds synthesized by sequence reactions starting from a reaction of 4-hydroxybenzaldehyde with 1,5-dibromo pentane to produce dialdehyde)I( .Then compound )I( reacted with different aromatic amines to give schiff bases )IIIV(,thereafter added acetyl chloride to schiff bases to yield N-acyl derivatives)VVII(.While1,3-diazetine derivatives)VIII-X( were synthesized from the reaction of N-acyl derivatives with sodium azide.The reaction of thiourea with N-acyl compounds led to formation of thiourea derivatives (XI-XIII).Finally, the pyrimidine compounds )XIV-XVI( were synthesized by ring closure reaction of compounds(XIXIII) with diethyl malonate.The synthesized compounds were characterized by measurements of melting points,FTIR,1H-N
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