In this work, (Cu1-xAgx)2ZnSnSe4 (CAZTSe) alloys with various silver content (x= 0.0, 0.1and 0.2) have been prepared by reacting their high purity elements (Cu, Ag, Zn, Sn and Se) in an evacuated quartz tube under pressure of 10 -3Torr. The composition of the prepared alloys was determined by energy dispersive X-ray spectroscopy (EDXS) analysis, the results were close to the theoretical values. CAZTSe thin films with a thickness of 800 nm were deposited by thermal evaporation technique on glass substrates at room temperature (RT) with a deposition rate of 0.53nm/sec. Similarly, CdS thin films were deposited with a thickness of 100 nm on the same substrates at RT with a deposition rate of 0.3nm/sec from ready-made CdS alloy powder. All prepared thin films were annealed at temperatures of 373K and 473K under vacuum (10-3Torr) for 1h. X-ray analysis showed that all CAZTSe alloys and their thin films were polycrystalline and have the tetragonal structure with preferential orientation in the (112) direction, while all thin CdS films were polycrystalline and have the hexagonal structure with preferential orientation in the (002) direction. The scanning electron microscopy (SEM) technique was used to study the surface morphology of all prepared CAZTSe films, while the atomic force microscopy (AFM) technique was used to study the surface topography of all prepared CAZTSe and CdS films. SEM results revealed that CAZTSe films had uniform surface features with irregular sized grains, while AFM results showed that the surface roughness and the average grain size of CAZTSe and CdS thin films increased with increasing Ag content for CAZTSe thin films and annealing temperature for CAZTSe and CdS thin films. The absorbance and transmittance spectra for CAZTSe and CdS thin films were recorded in the wavelength ranges of (400-1100) nm and (350- 1100) nm, respectively. Optical measurements showed that all CAZTSe and CdS thin films have a direct energy gap (Eg) that decreased with increasing silver content for CAZTSe thin films and annealing temperature (Ta) for both types of prepared thin films, so it decreased from 1.73 eV to1.5 eV when x content increased from 0.0 to 0.2 and decreased from 1.5 eV to1.46 eV and from 2.47 eV to 2.38 eV when Ta increased from RT to 473K for CAZTSe thin films with x content equal to 0.2 and CdS thin films, respectively. Optical constants such as extinction coefficient, refractive index and dielectric constant were calculated for all prepared thin films. The measurements of the electrical properties for prepared films showed that the D.C electrical conductivity (σd.c) increased with increasing Ag content for CAZTSe thin films and annealing temperature for both types of thin films. So the electrical conductivity changed from 1.1276*10-2 (Ω.cm)-1 to 28.9266*10-2 (Ω.cm)-1 when x changed from 0.0 to 0.2 and changed from 28.9266*10-2 (Ω.cm)-1 to 57.4599*10-2 (Ω.cm)-1 and from 4.0476*10-4 (Ω.cm)-1 to 9.4227*10-4 (Ω.cm)-1 when Ta changed from RT to 473K for CAZTSe thin films with Ag content equal to 0.2 and CdS thin films, respectively. The prepared thin films have two activation energies (Ea1 & Ea2) in the temperature ranges of (318-488)K and (313-443)K for CAZTSe and CdS films, respectively. The results of Hall effect for CAZTSe thin films showed that all films were of acceptor type and the concentration of holes in them decreased with increasing silver content and annealing temperature, while CdS thin films were of donor type and the concentration of electrons in them increased with increasing annealing temperature. In this research, solar cells were fabricated from CdS/CAZTSe/Si structurThe C-V measurements revealed that all prepared heterojunctions were of the abrupt type and the junction capacitance and carrier concentration reduced while the width of depletion region and the built-in potential increased with increasing the silver content and annealing temperature. The current-voltage characteristics under dark condition of CAZTSe heterojunctions showed that both the ideality factor and saturation current decreased with increasing Ag content and annealing temperature. While,The current-voltage characteristics under dark condition of CAZTSe heterojunctions showed that both the ideality factor and saturation current decreased with increasing Ag content and annealing temperature. While, the current-voltage measurements under illumination showed that the performance of heterojunction solar cell improved with increasing Ag content and annealing temperature. The result indicated that the prepared solar cell with 0.2 Ag content and 473K annealing temperature exhibited the highest efficiency (η = 2.827%) compared to other prepared solar cells
The thermal method was used to produce silicoaluminophosphate (SAPO-11) with different amounts of carbon nanotubes (CNT). XRD, nitrogen adsorption-desorption, SEM, AFM, and FTIR were used to characterize the prepared catalyst. It was discovered that adding CNT increased the crystallinity of the synthesize SAPO-11 at all the temperatures which studied, wile the maximum surface area was 179.54 m2/g obtained at 190°C with 7.5 percent of CNT with a pore volume of 0.317 cm3/g ,and with nano-particles with average particle diameter of 24.8 nm, while the final molar composition of the prepared SAPO-11 was (Al2O3:0.93P2O5:0.414SiO2).
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The present study was designed to synthesize a number of new Ceftriaxone derivatives by its involvement with a series of different amines, through the chemical derivatization of its 2-aminothiazolyl- group into an amide with chloroacetyl chloride, which on further conjugation with these selected amines will produce compounds with pharmacological effects that may extend the antimicrobial activity of the parent compound depending on the nature of these moieties.
Ceftriaxone was first equipped with a spacer arm (linker) by the action of chloroacetyl chloride in aqueous medium and then further reacted with seven different aliphatic and aromatic amines which resulted in the production of the aimed final target products. The syntheses
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The compound [G1] was prepared from the reaction of thiosemicarbazide with para-hydroxyphenylmethyl ketone in ethanol as a solvent. Then by sequence reactions prepared [G2] and [G3] compounds. The compound [G4] reaction with ethyl acetoacetoneto synthesized compound [G6] and acetyl acetone to synthesized compound [G5]. Reaction the [G3] with two different types of aldehydes in the present of pipredine to form new alkenes compounds [G7]and [G8].The compound [G3] reacted with hydrazine hydrate to formation[G4] with present the hydrazine hydrade 80% in (10) ml of absolute ethanol. Latter the compound [G4]reacted with different aldehydes with present the glacial acetic acid and the solvent was ethanol to formed the Schiff bases compounds[G9] an
... Show MoreThe compound [G1] was prepared from the reaction of thiosemicarbazide with para-hydroxyphenylmethyl ketone in ethanol as a solvent. Then by sequence reactions prepared [G2] and [G3] compounds. The compound [G4] reaction with ethyl acetoacetoneto synthesized compound [G6] and acetyl acetone to synthesized compound [G5]. Reaction the [G3] with two different types of aldehydes in the present of pipredine to form new alkenes compounds [G7]and [G8].The compound [G3] reacted with hydrazine hydrate to formation[G4] with present the hydrazine hydrade 80% in (10) ml of absolute ethanol. Latter the compound [G4]reacted with different aldehydes with present the glacial acetic acid and the solvent was ethanol to formed the Schiff bases compounds[G9] an
... Show MoreThis work involves synthesis of amides containing isoxazoline unit starting with
chalcone; 4-[3-(3‾-nitrophenyl)-2-propene- 1-one]-aniline[I]. 4-Aminoacetophenone was
reacted with 3-nitrobenzaldehyde in basic medium giving chalcone [I] by claisen-schemidt
reaction. The chalcone [I] was reacted with hydroxylamine hydrochloride giving isoxazoline
[II] in NaOH basic medium. The amides with structural formula [III]a-h were prepared by the
reaction of amino compounds ; isoxazoline [II] with different acid chlorides in dry pyridine
and using DMF as a solvent at 4
0
C. All the synthesized compounds have been characterized
by melting points , FTIR and
1
HMNR (of compound [III]a) spectroscopy.
Phthalimide formation of Phthalic anhydride with various amines using microwave or without a method with the difference of the catalyst used in a prepared Phthalimide, either structure general are C6H4CONRCO and used as starting materials in synthesis several compounds derivative phthalimides are an important compounds because spectrum wide biological activities including Antimicrobial activity, anticonvulsant activity, Anti-inflammatory activity,Analgesic activity, Anti- influenza activity and Thromboxane inhibitory activity
Silica-based mesoporous materials are a class of porous materials with unique characteristics such as ordered pore structure, large surface area, and large pore volume. This review covers the different types of porous material (zeolite and mesoporous) and the physical properties of mesoporous materials that make them valuable in industry. Mesoporous materials can be divided into two groups: silica-based mesoporous materials and non-silica-based mesoporous materials. The most well-known family of silica-based mesoporous materials is the Mesoporous Molecular Sieves family, which attracts attention because of its beneficial properties. The family includes three members that are differentiated based on their pore arrangement. In this review,
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This study aims to prepare Cadmium Sulphide (CdS) thin films using thermal Chemical Spray Pyrolysis (CSP) on glass of different temperatures substrate from cadmium nitrate solution. Constant thickness was (430 ± 20 nm) and the effect of substrate temperature on the optical properties of prepared thin films.
Optical properties have been studied from transmittance and absorbance spectral within wavelengths range (360 - 900 nm). The results show that all the prepared films have a direct electron transitions and optical energy gap between (2.31-2.44 eV). They also show that the transmittance and optical energy gap of films prepared from nitrate solution increase with increasing of substrate temperature, then transmittance start do
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In this research we prepared CdS thin films by Spray pyrolysis method on a glass substrates and we study its structural , optical , electrical properties .The result of (X-Ray ) diffraction showed that all thin films have a polycrystalline structure , The relation of the transmission as a function of wavelength for the CdS films had been studied , The investigated of direct energy gap of the CdS its value is (2.83 eV). In Hall effect measurement of the CdS we find the charge carriers is p – type and Hall coefficient 1157.33(cm3/c) ,Hall mobility 6.77(cm2/v.s)
New Schiff base and their Mn(II),Co(II),Ni(II), Cu(II) and Hg(II) complexes formed by the condensation of O-phathaldehyde and ethylene diamine (2:1) to give ligand (L1) in the first step ,then the ligand (L1) with 2- aminophenol (1:2) to give ligand (L2) were prepared by classic addition through microwave method . These compounds (Ligands and complexes) have been diagnosed electronic spectra, FT-IR, 1H-&13C-NMR (only ligand), magnetic susceptibility, elemental microanalysis and molar conductance measurements. Analytical values displayed that all the complexes appeared (metal: ligand) (1:1) ratio with the six chelation. All the compounds appear a high activity versus four types of bacteria suc
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