Abstract Ternary Silver Indium selenide Sulfur AgInSe1.8S0.2 in pure form and with a 0.2 ratio of Sulfur were fabricated via thermal evaporation under vacuum 3*10-6 torr on glasses substrates with a thickness of (550) nm. These films were investigated to understand their structural, optical, and Hall Characteristics. X-ray diffraction analysis was employed to examine the impact of varying Sulfur ratios on the structural properties. The results revealed that the AgInSe1.8S0.2 thin films in their pure form and with a 0.2 Sulfur ratio, both at room temperature and after annealing at 500 K, exhibited a polycrystalline nature with a tetragonal structure and a predominant orientation along the (112) plane, indicating an enhanced degree of crystallinity. The Atomic Force Microscopy (AFM) was utilized to explore how Sulfur affects roughness of surfaces and sampls Grain Size . Furthermore, optical parameters, such as the optical gap and absorption coefficient, were calculated to assess the influence of Sulfur on the optical properties of the AgInSe1.8S0.2 thin films. The UV/Visible measurements indicated a reduction in the energy band gap to 1.78 eV for AgInSe1.8S0.2 at 500 K, making these films potentially suitable for photovoltaic applications. These thin films exhibited donor characteristics, with an increase in electron concentration observed with higher Sulfur content and annealing temperature
A nanocrystalline thin films of PbS with different thickness (400, 600)nm have been prepared successfully by chemical bath deposition technique on glass and Si substrates. The structure and morphology of these films were studied by X-ray diffraction and atomic force microscope. It shows that the structure is polycrystalline and the average crystallite size has been measured. The electrical properties of these films have been studied, it was observed that D.C conductivity at room temperature increases with the increase of thickness, From Hall measurements the conductivity for all samples of PbS films is p-type. Carrier's concentration, mobility and drift velocity increases with increasing of thickness. Also p-PbS/n-Si heterojunction has been
... Show MoreBackground: Lymphomas are a group of diseases caused by malignant lymphocytes that accumulate in lymph nodes and cause the characteristic clinical features of lymphadenopathy. Intercellular adhesion molecule-1 (ICAM-1) (CD54) is a transmembrane glycoprotein belonging to the immunoglobulin superfamily of adhesion molecules. Cortactin was first identified as one of the major substrates for src kinase. because it localized to Cortical actin structures, The aims of this study was to evaluate and compare the immunohistochemical of ICAM-1 expression as cell adhesion molecule marker and Cortactin expression as invasive marker. Material and Methods: This study was performed on (68) formalin-fixed, paraffin-embedded blocks, histopathologically diagn
... Show MoreThe -s-extending modules will be purpose of this paper, a module M is -s-extending if each submodule in M is essential in submodule has a supplement that is direct summand. Initially, we give relation between this concept with weakly supplement extending modules and -supplemented modules. In fact, we gives the following implications:
Lifting modules -supplemented modules -s-extending modules weakly supplement extending modules.
It is also we give examples show that, the converse of this result is not true. Moreover, we study when the converse of this result is true.
Let L be a commutative ring with identity and let W be a unitary left L- module. A submodule D of an L- module W is called s- closed submodule denoted by D ≤sc W, if D has no proper s- essential extension in W, that is , whenever D ≤ W such that D ≤se H≤ W, then D = H. In this paper, we study modules which satisfies the ascending chain conditions (ACC) and descending chain conditions (DCC) on this kind of submodules.
Five samples of the ternary alloy Ge-S-Cd were created using the melting point method, and the effects of partially substituting cadmium for germanium were determined. and partial substitution of germanium by cadmium was used to study the change in electrical conductivity. Electrical experiments were performed on Ge35-xS65Cdxternary alloy with x = 0, 5, 10, 15, and 20. It was discovered that the conductivity (σdc) rises with rising temperature in all samples under experiment. This confirms that the samples have semiconductor behavior. It has been observed that there are three regions of electrical conductivity in the electrical conductivity curve at low, moderate, and high temperatures. The pr
... Show MoreIn the present work, the feasibility of formation near-ideal ohmic behavior of In/n-Si contact efficiently by 300 s duration Nd:YAG pulsed laser processing has been recognized. Several laser pulses energy densities have been used, and the optimal energy density that gives best results is obtained. Topography of the irradiated region was extensively discussed and supported with micrographic illustrations to determine the surface condition that can play the important role in the ohmic contact quality. I-V characteristics in the forward and reverse bias and barrier height measurements have been studied for different irradiated samples to determine the laser energy density that gives best ohmic behavior. Comparing the current results with
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