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Contact Resistance Effects in Highly Doped Organic Electrochemical Transistors
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Publication Date
Sat Aug 17 2013
Journal Name
American Journal Of Pharmacological Sciences
Pentoxifylline as Adjuvant Therapy to Etanercept in Patients with Moderately to Highly Active Rheumatoid Arthritis
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Publication Date
Sat Jul 22 2023
Journal Name
Journal Of Engineering
Experimental Investigation into the Heat and Mass Transfer in an Indirect Contact Closed Circuit Cooling Tower
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The heat and mass transfer coefficients of the indirect contact closed circuit cooling tower, ICCCCT, were investigated experimentally. Different experiments were conducted involving the controlling parameters such as air velocity, spray water to air mass flow rate ratio, spray water flow rate, ambient air wet bulb temperature and the provided heat load to investigate their effects on the performance of the ICCCCT. Also the effect of using packing on the performance of the ICCCCT was investigated. It was noticed that these parameters affect the tower performance and the use of packing materials is a good approach to enhance the performance for different operational conditions. Correlations for mass and heat transfer coefficients are pres

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Publication Date
Thu May 18 2023
Journal Name
Journal Of Engineering
Implementation of Digital Image processing in Calculating Normal Approach for Spherical Indenter Considering Elastic/Plastic Contact
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In this work a study and calculation of the normal approach between two bodies, spherical and rough flat surface, had been conducted by the aid of image processing technique. Four kinds of metals of different work hardening index had been used as a surface specimens and by capturing images of resolution of 0.006565 mm/pixel a good estimate of the normal approach may be obtained the compression tests had been done in strength of material laboratory in mechanical engineering department, a Monsanto tensometer had been used to conduct the indentation tests.
A light section measuring equipment microscope BK 70x50 was used to calculate the surface parameters of the texture profile like standard deviation of asperity peak heights, centre lin

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Publication Date
Sat Dec 11 2021
Journal Name
Neuroquantology
Investigate and Calculation Electron Transfer Rate Constant in the N749 Sensitized Dye Contact to ZnSe Semiconductor
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The dye–semiconductor interface between N749 sensitized and zinc semiconductor (ZnSe) has been investigated and studied according to quantum transition theory with focusing on the electron transfer processes from the N749 sensitized (donor) to the ZnSe semiconductor (acceptor). The electron transfer rate constant and the orientation energy were studied and evaluated depended on the polarity of solvents according to refractive index and dielectric constant coefficient of solvents and ZnSe semiconductor. Attention focusing on the influence of orientation energies on the behavior of electron transfer rate constant. Differentdata of rate constant was discussion with orientation energy and effective driving energy for N749-ZnSe system.

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Publication Date
Fri Jul 21 2023
Journal Name
Journal Of Engineering
Implementation of Digital Image processing in Calculating Normal Approach for Spherical Indenter Considering Elastic/Plastic Contact
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In this work a study and calculation of the normal approach between two bodies,
spherical and rough flat surface, had been conducted by the aid of image processing
technique. Four kinds of metals of different work hardening index had been used as a
surface specimens and by capturing images of resolution of 0.006565 mm/pixel a good estimate of the normal approach may be obtained the compression tests had been done in strength of material laboratory in mechanical engineering department, a Monsanto tensometer had been used to conduct the indentation tests. A light section measuring equipment microscope BK 70x50 was used to calculate the surface parameters of the texture profile like standard deviation of asperity peak heights

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Publication Date
Thu Oct 01 2020
Journal Name
Ieee Transactions On Very Large Scale Integration (vlsi) Systems
Low-Power, Highly Reliable Dynamic Thermal Management by Exploiting Approximate Computing
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With the continuous downscaling of semiconductor processes, the growing power density and thermal issues in multicore processors become more and more challenging, thus reliable dynamic thermal management (DTM) is required to prevent severe challenges in system performance. The accuracy of the thermal profile, delivered to the DTM manager, plays a critical role in the efficiency and reliability of DTM, different sources of noise and variations in deep submicron (DSM) technologies severely affecting the thermal data that can lead to significant degradation of DTM performance. In this article, we propose a novel fault-tolerance scheme exploiting approximate computing to mitigate the DSM effects on DTM efficiency. Approximate computing in hardw

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Publication Date
Sun Mar 31 2024
Journal Name
Journal Of Optics
Novel characteristics of CQDs synthesized by electrochemical method
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Publication Date
Wed Jun 01 2011
Journal Name
Journal Of Engineering
ELECTROCHEMICAL DECOLORIZATION OF DIRECT BLACK TEXTILE DYE WASTEWATER
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Electrochemical decolorization of direct black textile dye was studied in the presence of sodiumhydroxide (NaCl). Electrochemical cell occupy about 1 liter of working electrolyte supplied with graphiteelectrodes for both anode and cathode was constructed for this purpose. Decolorization percent, treatment time, power consumption, and pH were studied as a function of the applied voltage and salt concentration. Results show that decolorization increase with increasing salt concentration and applied voltage. Best decolorization of 86% can be achieved after 17 min at 7 volt and 5 g/l salt concentration. Further decolorization can be achieved but this will be accompanied with a sharp increase in power consumption. No significant decrease

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Publication Date
Wed Feb 01 2017
Journal Name
Journal Of Multidisciplinary Engineering Science Studies
Investigation of p-Ps Produced by Electrochemical Etching
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The nanocrystalline porous silicon (PS) films are prepared by electrochemical etching ECE of p -type silicon wafer with current density (10mA/cm ) and etching times on the formation nano -sized pore array with a dimension of around different etching time (10 and 20) min. The films were characterized by the measurement of XRD, atomic force microscopy properties (AFM). We have estimated crystallites size from X -Ray diffraction about nanoscale for PS and AFM confirms the nanometric size Chemical fictionalization during the electrochemical etching show on the surface chemical composition of PS. The atomic force microscopy investigation shows the rough silicon surface, with increasing etching process (current density and etching time) porous st

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Publication Date
Mon Dec 30 2002
Journal Name
Iraqi Journal Of Chemical And Petroleum Engineering
Relationship Between Nusselt and Reynolds Number in Direct Contact Heat Transfer by Condensation of Light Hydrocarbons in Water
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