Pure Cu (CZTSe) and Ag dopant CZTSe (CAZTSe) thin films with Ag content of 0.1 and 0.2 were fabricated on coring glass substrate at R.T with thickness of 800nm by thermal evaporation method. Comparison between the optical characteristics of pure Cu and Ag alloying thin films was done by measuring and analyzing the absorbance and transmittance spectra in the range of (400-1100)nm. Also, the effect of annealing temperature at 373K and 473K on these characteristics was studied. The results indicated that all films had high absorbance and low transmittance in visible region, and the direct bang gap of films decreases with increasing Ag content and annealing temperature. Optical parameters like extinction coefficient, refractive index, and dielectric constants were estimated.
A thin film of AgInSe2 and Ag1-xCuxInSe2 as well as n-Ag1-xCuxInSe2 /p-Si heterojunction with different Cu ratios (0, 0.1, 0.2) has been successfully fabricated by thermal evaporation method as absorbent layer with thickness about 700 nm and ZnTe as window layer with thickness about 100 nm. We made a multi-layer of p-ZnTe/n-AgCuInSe2/p-Si structures, In the present work, the conversion efficiency (η) increased when added the Cu and when used p-ZnTe as a window layer (WL) the bandgap energy of the direct transition decreases from 1.75 eV (Cu=0.0) to 1.48 eV (Cu=0.2 nm) and the bandgap energy for ZnTe=2.35 eV. The measurements of the electrical properties for prepared films showed that the D.C electrical conductivity (σd.c) increase
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In this work, thin films of cadmium oxide: nickel oxide (CdO: NiO) were prepared by pulsed laser deposition at different pulse energies of Nd: YAG laser. The thin films' properties were determined by various techniques to study the effect of pulse laser energy on thin films' properties. X-ray diffraction measurements showed a mixture of both phases. The degree of crystallinity and the lattice constant increase with the laser energy increase, while the lattice strain decreases. FE-SEM images show that the substrates' entire surface is uniformly covered, without any cracks, with a well-connected structure consisting of small spherical particles ranging in size from 15 to 120 nm. Increasing the laser power causes to increase the pa
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In this paper, we used maximum likelihood method and the Bayesian method to estimate the shape parameter (θ), and reliability function (R(t)) of the Kumaraswamy distribution with two parameters l , θ (under assuming the exponential distribution, Chi-squared distribution and Erlang-2 type distribution as prior distributions), in addition to that we used method of moments for estimating the parameters of the prior distributions. Bayes
The aim of this paper is to estimate a nonlinear regression function of the Export of the crude oil Saudi (in Million Barrels) as a function of the number of discovered fields.
Through studying the behavior of the data we show that its behavior was not followed a linear pattern or can put it in a known form so far there was no possibility to see a general trend resulting from such exports.
We use different nonlinear estimators to estimate a regression function, Local linear estimator, Semi-parametric as well as an artificial neural network estimator (ANN).
The results proved that the (ANN) estimator is the best nonlinear estimator am
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The behaviour of the electrical conductivity (σ) and the activation energies (Ea1, Ea2) have been investigated on a-InAs thin films as a function of thickness (250,350,450,550,650) nm, before and after heat treatment. The films were annealed at (373, 423, 473) K for one hour. The films contain two types of transport mechanisms, and the electrical conductivity (σ) increases whereas the activation energy (Ea) would decrease as the films thickness increases.
Some of structural ,and electrical properties of pure and zinc (Zn) doped cadmium telluride thin films with impurity percentages (0.5, 1, 1.5)%, deposited on hot glass substrate (temperature equals to 423K) of thickness of 300nm and rate deposition of 0.5 nm.s-1 by thermal co-evaporation technique under vacuum of (2×10-5)Torr have been investigates. The structural properties for the prepared films were studied before and after. doping process by analysis of the X-ray diffraction, and it appeared that pure and dopant CdTe thin films are polycrystalline and have the cubic structure with preferential orientation in the [111] direction, and the crystal structure of the films were improved due to doping process. From d.c
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The electrical properties of the AlNiCo thin films with thickness (1000oA) deposited on glass substrates using Ion – Beam sputtering (IBS) technique under vacuum <10-6 torr have been studied . Also it studied the effect of annealing temperature from this films , It is found that the effective energy decrease with increase of temperature and the conductivity decrease with increase temperature 323oK but after this degree the conductivity increasing .
ZnO thin films have been prepared by pulse laser deposition technique at room temperatures (RT). These films were deposited on GaAs substrate to form the ZnO/GaAs heterojunction solar cell. The effect of annealing temperatures at ( RT,100, 200)K on structural and optical properties of ZnO thin films has been investigated. The X-ray diffraction analysis indicated that all films have hexagonal polycrystalline structure. AFM shows that the grains uniformly distributed with homogeneous structure. The optical absorption spectra showed that all films have direct energy gap. The band gap energy of these films decreased with increasing annealing temperatures. From the electrical properties, the carriers have n-type conductivity. From
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