The Cu2SiO3 composite has been prepared from the binary compounds (Cu2O, and SiO2) with high purity by solid state reaction. The Cu2SiO3 thin films were deposited at room temperature on glass and Si substrates with thickness 400 nm by pulsed laser deposition method. X-ray analysis showed that the powder of Cu2SiO3 has a polycrystalline structure with monoclinic phase and preferred orientation along (111) direction at 2θ around 38.670o which related to CuO phase. While as deposited and annealed Cu2SiO3 films have amorphous structure. The morphological study revealed that the grains have granular and elliptical shape, with average diameter of 163.63 nm. The electrical properties which represent Hall effect were investigated. Hall coeffici

     A colloidal indium oxide (In₂O₃) nanoparticles (NPs) were synthesized pulsed laser ablation (PLA) of  indium  plate placed on the bottom of the quartz vessel containing (3ml) of pure ethanol. The influence laser energy on the properties of the formed nano-particles  were characterized by using atomic force microscopy (AFM), X-ray diffraction (XRD), Ultraviolet Visible (UV-Vis) technique, and electrical properties measurements. The XRD revealed the crystallization  structure of  In₂O₃  nanoparticles and all the films having preferential orientation along (222) plane and intensity increases with increasing laser energy, The UV–Visible spect

CuInSe2(CIS) thin films have been prepared by use vacuum thermal evaporation technique, of thickness750 nm with rate of deposition 1.8±0.1 nm/sec on glass substrate at room temperature and pressure (10-5) mbar. Heat treatment has been carried out in the range (400-600) K for all samples. The optical properties of the CIS thin films are been studied such as (absorption coefficient, refractive index, extinction coefficient, real and imaginary dielectric constant) by determined using Measurement absorption and transmission spectra. Results showed that through the optical constants we can make to control it are wide applications as an optoelectronic devices and photovoltaic applications.

CuInSe2 (CIS)thin films have been prepared by use vacuum thermal evaporation technique, of 750 nm thickness, with rate of deposition 1.8±0.1 nm/sec on glass substrate at room temperature and pressure (10-5) mbar. Heat treatment has been carried out in the range (400-600) K for all samples. The optical properties of the CIS thin films are been studied such as (absorption coefficient, refractive index, extinction coefficient, real and imaginary dielectric constant)by determined using Measurement absorption and transmission spectra. Results showed that through the optical constants we can made to control it is wide applications as an optoelectronic devices and photovoltaic applications.

The study effect irradiation on optical properties of film (PVA: CuCL2) prepared by casting method, with thickness of (30±1) μm. And used Cs137 to obtained Gamma ray with energy (662)keV and time irradiation(5,6 and 7) weeks and affectivity (4.3) ci. The spectra absorbance and transmittance register in range (300-1100) nm .
Results show that the optical band gap for (PVA: CuCl2) decreasing after irradiation with gamma ray from (3.2,3.1,3 and 2.7)eV, urbach energy values increase with the increasing time radiation. And the absorption constants (α,k,n,) and the optical conductivity are changing after irradiated with gamma ray .

  The Influence of annealing temperature on the optical properties of (CuInSe2) thin films was studied. Thermal evaporation in vacuum technique has been used for films deposited on glass substrates, these films were annealed in vacuum at (100C°, 200C°) for (2 hours). The optical properties were studied in the range (300-900) nm. The obtained results revealed a reduction in energy band gap with annealing temperature . optical parameters such as reflectance, refractive index, extinction coefficient, real and imaginary parts of the dielectric constant, skin depth and optical conductivity are investigated before and after annealing. It was found that all these parameters were affected by annealing temperature.
 

  The Silver¹Indium¹Selenide (AgInSe₂) (AIS) thin¹films of (300¹Â±20) nm thickness  have been¹prepared²from the compound alloys²using thermal evaporation² technique onto the glass²substrate at room temperature, with a deposition rate²(3±0.1) nm²sec^-1.

The²structural, optical and electrical³properties have been studied³at different annealing³temperatures (Ta=450, 550 and 650) K.

The amount³or (concentration) of the elements³(Ag, In, Se) in the  prepared alloy³was verified using  an