This study aimed to explain the relationship between hyperthyroidism and asthma by indicating the effect of thyroid hormones (T3 and T4) on leptin and IgE levels.To determine whether T3 and T4 alters serum leptin and IgE levels, twenty newly diagnosis hyperthyroidism patients,twenty asthma patients, ten asthma with hyperthyroidism patients and ten (healthy) as a control were studied. Serum samples were collected to measure the leptin and IgE levels in addition to T3,T4 and TSH Levels. The results revealed a significant (p<0.05) increase in leptin and IgE levels in hyperthyroidism, asthma and hyperthyroidism with asthma patients compared with the control group.These results indicated that elevation in T3 and T4 induced asthma,by affect

Eighty one bacterial isolates were obtained from 53 soil samples of different plants rhizosphere. All the isolated bacterial were screened for antifungal effect against Fusarium oxysporum . Three isolates gave antifungal activity with inhibition zone ranged between (0.5-2.5 cm). Two isolates (Bd1 and Bd2) were Brevundimonas diminuta, while the third (Pf1) was Pseudomonas fluorescence . B. diminuta (Bd1) which used in this study isolated from Raphanus sativus gave the highest inhibition zone against F. oxysporum. Cell free supernatant of B.diminuta(Bd1) was better in antifungal activity than bacterial cells against F. oxysporum. The highest antifungal substance production was obtained from mineral salt broth containing 1% peptone after in

A field experiment was carried out at University of Baghdad, College of Agricultural Engineering Sciences during fall season of 2020 and spring season of 2021. This study was aimed evaluate the effect of the organic fertilizer and boron foliar on the yield of potatoes for processing. The factorial experiment (5*4) within RCBD and three replicates. The organic fertilizer as palm peat at four levels (0, 12, 24 and 36 ton. ha-1) in addition to the chemical fertilizer recommendation treatment. Boron at four Concentrations 0, 100, 150 and 200 mg. L-1 . The results revealed significant different among application of organic fertilizer at the level of 24 ton. ha-1 and the foliar application of boron at a concentration of 100 mg. L-1 in the

   The ZnTe alloy was prepared as  deposited thin films on the glass substrates at a thickness of 400±20 nm using vacuum evaporation technique at pressure (1 × 10^-5) mbar and room temperature. Then the thin films under vacuum (2 × 10^-3 mbar) were annealing at (RT,100 and 300) °C for one hour. The structural properties were studied by using X-ray diffraction and AFM, the results show that the thin films had approached the single crystalline in the direction (111) as preferred orientation of the structure zinc-blende for cubic type, with small peaks of tellurium (Te) element for all prepared thin films. The calculated crystallite size (C_s) decreased with the increase in the anne

 The behaviour of the electrical conductivity (σ) and the activation energies (Ea1, Ea2) have been investigated on a-InAs thin films as a function of thickness (250,350,450,550,650) nm, before and after heat treatment. The films were annealed at (373, 423, 473) K for one hour.          The films contain two types of transport mechanisms, and the electrical conductivity (σ) increases whereas the activation energy (Ea) would decrease as the films thickness increases.
 

Thin films of cadmium sulphoselenide (CdSSe) have been prepared by a thermal evaporation method on glass substrate, and with pressure of 4x10-5 mbar. The optical constants such as (refractive index n, dielectric constant ?i,r and Extinction coefficient ?) of the deposition films were obtained from the analysis of the experimental recorded transmittance spectral data. The optical band gap of (CdSSe) films is calculate from (?h?)2 vs. photon energy curve. CdSSe films have a direct energy gap, and the values of the energy gap were found to increase when increasing annealing temperature. The band gap of the films varies from 1.68 – 2.39 eV.

The choice of gate dielectric materials is fundamental for organic field effect transistors (OFET), integrated circuits, and several electronic applications. The operation of the OFET depends on two essential parameters: the insulation between the semiconductor layer and the gate electrode and the capacitance of the insulator. In this work, the electrical behavior of a pentacene-based OFET with a top contact / bottom gate was studied. Organic polyvinyl alcohol (PVA) and inorganic hafnium oxide (HfO₂) were chosen as gate dielectric materials to lower the operation voltage to achieve the next generation of electronic applications. In this study, the performance of the OFET was studied using monolayer and bilayer gate insulators.