This work focuses on the preparation of pure nanocrystalline SnO2 and SnO2:Cu thin films on cleaned glass substrates utilizing a sol-gel spin coating and chemical bath deposition (CBD) procedures. The primary aim of this study is to investigate the possible use of these thin films in the context of gas sensor applications. The films underwent annealing in an air environment at a temperature of 500 ◦C for duration of 60 minutes. The thickness of the film that was deposited may be estimated to be around 300 nm. The investigation included an examination of the structural, optical, electrical, and sensing characteristics, which were explored across various preparation circumstances, specifically focusing on varied concentrations of Cu-doping (2, 4, and 6 wt.%). The deposited films were analyzed by several techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and optical absorption spectroscopy. The films generated by the spin coating method had a tetragonal rutile structure, while the films created via the chemical bath deposition (CBD) technique displayed both tetragonal rutile and orthorhombic structures. The spin coating technique was used to make films of several weight percentages (0, 2, 4, and 6 wt.%). The resulting crystallite sizes were examined and found to be 23 nm, 18 nm, 14 nm, and 10.5 nm, respectively. Similarly, films made using the chemical bath deposition (CBD) method exhibited crystallite sizes of 22, 13.9, 9.3, and 8.15 nm, respectively. The obtained findings from atomic force microscopy (AFM) and scanning electron microscopy (SEM) analyses indicate a consistent trend whereby, as the concentration of Cu-doped material rises, there is a decrease in the average grain size. The transmittance and absorbance spectra were examined within the wavelength range of 300 to 1000 nm. The films generated by both approaches exhibit a significant level of light transmission throughout the visible spectrum. The bandgap energy of spin coating and CBD films decreases with increasing Cu-doped concentrations; the values were (3.88, 3.8, 3.68, and 3.63) eV and (3.8, 3.78, 3.66, and 3.55) eV, respectively. The electrical characteristics of the films include direct current (DC) electrical conductivity, which indicates the presence of two activation energies, Ea1 and Ea2. These activation energies exhibit an upward trend when the concentration of Cu doping is increased. The films were examined for their ability to detect carbon monoxide (CO) gas at a concentration of about 50 ppm at normal room temperature conditions. The sensitivity of the films to carbon monoxide (CO) gas was assessed at various time intervals and temperatures. The results indicated that the film generated using spin coating exhibited a notably high sensitivity at a temperature of 200 °C, while the film prepared using the chemical bath deposition (CBD) approach had heightened sensitivity at a temperature of 150 °C. Keywords: Spin coating, SnO2 thin films, CBD, AFM, XRD, gas sensor.
مجلة العلوم الاقتصادية والإدارية المجلد 18 العدد 69 الصفحات 318- 332 |
ABSTRACT:In this paper, Cd10–xZnxS (x = 0.1, 0.3, 0.5) films were deposited by using chemical spray pyrolysis technique, the molar concentration precursor solution was 0.15 M/L. Depositions were done at 350°C on cleaned glass substrates. X-ray dif- fraction technique (XRD) studies for all the prepared film; all the films are crystalline with hexagonal structure .The optical properties of the prepared films were studied using measurements from VIS-UV-IR spectrophotometer at wave- length with the range 300 - 900 nm; the average transmission of the minimum doping ratio (Zn at 0.1%) was about 55% in the VIS region, it was decrease at the increasing of Zn concentration in the CdS films, The band gap of the doped CdS films was varied as 3.7, 3
... Show MoreThe PbSe alloy was prepared in evacuated quarts tubs by the method of melt quenching from element, the PbSe thin films prepared by thermal evaporation method and deposited at different substrate temperature (Ts) =R.T ,373 and 473K . The thin films that deposited at room temperature (R.T=303)K was annealed at temperature, Ta= R.T, 373 and 473K . By depended on D.C conductivity measurements calculated the density of state (DOS), The density of extended state N(Eext) increases with increasing the Ts and Ta, while the density of localized state N(Eloc) is decreased . We investigated the absorption coefficient (?) that measurement from reflection and transmission spectrum result, and the effect of Ts and Ta on it , also we calculated the tai
... Show MoreZnS thin films were grown onto glass substrates by flash evaporation technique, the effects of ? – rays on the optical constants of ZnS these films were studied. It was found that ? – rays affected all the parameters under investigation.
In this work, diamond-like carbon (DLC) thin films were prepared from Cyclohexane. Thin films were deposited on quartz substrate by atmospheric pressure Argon plasma jet system. The plasma jet system was applying high voltage sinusoidal waves of frequency 28 kHz and potential difference of 7.5kV peak to peak across the electrodes. The effect of annealing at 400, 500 and 600 °C under vacuum for two hours on optical properties and structural properties of the DLC thin films were investigated. This effect was clarified by X-ray diffraction (XRD), FTIR, UV-Visible absorption, Scanning Electron Microscopy (SEM) and Raman Spectroscopy. The X-ray diffraction patterns for the annealing DLC thin films show two broad peaks at 2θ, 26.62° and 51.58
... Show MoreThin film solar cells are preferable to the researchers and in applications due to the minimum material usage and to the rising of their efficiencies. In particular, thin film solar cells, which are designed based one transition metal chalcogenide materials, paly an essential role in solar energy conversion market. In this paper, transition metals with chalcogenide Nickel selenide termed as (NiSe2/Si) are synthesized. To this end, polycrystalline NiSe2 thin films are deposited through the use of vacuum evaporation technique under vacuum of 2.1x10-5 mbar, which are supplied to different annealing temperatures. The results show that under an annealed temperature of 525 K,
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