This work focuses on the preparation of pure nanocrystalline SnO2 and SnO2:Cu thin films on cleaned glass substrates utilizing a sol-gel spin coating and chemical bath deposition (CBD) procedures. The primary aim of this study is to investigate the possible use of these thin films in the context of gas sensor applications. The films underwent annealing in an air environment at a temperature of 500 ◦C for duration of 60 minutes. The thickness of the film that was deposited may be estimated to be around 300 nm. The investigation included an examination of the structural, optical, electrical, and sensing characteristics, which were explored across various preparation circumstances, specifically focusing on varied concentrations of Cu-doping (2, 4, and 6 wt.%). The deposited films were analyzed by several techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and optical absorption spectroscopy. The films generated by the spin coating method had a tetragonal rutile structure, while the films created via the chemical bath deposition (CBD) technique displayed both tetragonal rutile and orthorhombic structures. The spin coating technique was used to make films of several weight percentages (0, 2, 4, and 6 wt.%). The resulting crystallite sizes were examined and found to be 23 nm, 18 nm, 14 nm, and 10.5 nm, respectively. Similarly, films made using the chemical bath deposition (CBD) method exhibited crystallite sizes of 22, 13.9, 9.3, and 8.15 nm, respectively. The obtained findings from atomic force microscopy (AFM) and scanning electron microscopy (SEM) analyses indicate a consistent trend whereby, as the concentration of Cu-doped material rises, there is a decrease in the average grain size. The transmittance and absorbance spectra were examined within the wavelength range of 300 to 1000 nm. The films generated by both approaches exhibit a significant level of light transmission throughout the visible spectrum. The bandgap energy of spin coating and CBD films decreases with increasing Cu-doped concentrations; the values were (3.88, 3.8, 3.68, and 3.63) eV and (3.8, 3.78, 3.66, and 3.55) eV, respectively. The electrical characteristics of the films include direct current (DC) electrical conductivity, which indicates the presence of two activation energies, Ea1 and Ea2. These activation energies exhibit an upward trend when the concentration of Cu doping is increased. The films were examined for their ability to detect carbon monoxide (CO) gas at a concentration of about 50 ppm at normal room temperature conditions. The sensitivity of the films to carbon monoxide (CO) gas was assessed at various time intervals and temperatures. The results indicated that the film generated using spin coating exhibited a notably high sensitivity at a temperature of 200 °C, while the film prepared using the chemical bath deposition (CBD) approach had heightened sensitivity at a temperature of 150 °C. Keywords: Spin coating, SnO2 thin films, CBD, AFM, XRD, gas sensor.
Sol-gel derived CuCo-oxide coatings as solar selective surfaces, synthesized onto aluminium substrates at various annealing temperatures, are analysed by correlating their structural, chemical bonding states, and surface morphological topographies. As the annealing progressed, all the coatings displayed a Cu0.56Co2.44O4 (ICSD 78-2175) phase with preferential orientation along (400) reflection plane. Rietveld refinement of X-ray diffraction (XRD) data indicate that residual stress and microstrains developed around the coating surfaces are reduced resulting in mechanically stable thin films. Enhancement of the crystallite size and preferred orientation of the surface were confirmed via XRD, field emission scanning electron microscopy (FESEM),
... Show MoreIn this work ,pure and doped(CdO)thin films with different concentration of V2O5x (0.0, 0.05, 0.1 ) wt.% have been prepared on glass substrate at room temperature using Pulse Laser Deposition technique(PLD).The focused Nd:YAG laser beam at 800 mJ with a frequency second radiation at 1064 nm (pulse width 9 ns) repetition frequency (6 Hz), for 500 laser pulses incident on the target surface At first ,The pellets of (CdO)1-x(V2O5)x at different V2O5 contents were sintered to a temperature of 773K for one hours.Then films of (CdO)1-x(V2O5)x have been prepared.The structure of the thin films was examined by using (XRD) analysis..Hall effect has been measured in orded to know the type of conductivity, Finally the solar cell and the effici
... Show MoreThe optical energy gap(Eopt) and the width of the tails of localized states in the band gap (?E) for Se:2%Sb thin films prepared by thermal co-evaporation method as a function of annealing temperature are studied in the photon energy range ( 1 to 5.4)eV.Se2%Sb film was found to be indirect transition with energy gap of (1.973,2.077, 2.096, 2.17) eV at annealing temperature (295,370,445,520)K respectively. The Eopt and ?E of Se:2%Sb films as a function of annealing temperature showed an increase in Eopt and a decrease in ?E with increasing the annealing temperature. This behavior may be related to structural defects and dangling bonds.
Compounds of (ZnO)1-x(SnO 2 ) x were prepared with various proportions of tin oxide (SiO 2) (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) by mixing zinc oxide (ZnO) with highpurity tin oxide and then sintering the mixture in an oven at a temperature of 1000 °C for a period of 1 h. The resulting powders were ground and pressed into tablets of 1 cm diameter and 0.5 cm thickness. The properties of (ZnO) 1-x(SnO 2 ) x composites flms were prepared and studied as sensitive to the diferent gases NO2 and H2 S. Thin flms were prepared from (ZnO) 1-x(SnO 2 ) x via pulsed laser deposition method using glass and single crystal silicon for investigation the morphology and gas sensing properties with a thickness of 150 nm. The morphology examinat
... Show MoreTin oxide: titanium oxide: bismuth oxide (SnO2 )1–x(TiO 2 :Bi 2O3 ) x composites with different loading ratios (0, 0.1, 0.15, 0.2, 0.25 and 0.3) have numerous new application in microelectronics, sensors, and capacitors. This work concerned with the synthesis of (SnO 2 )1–x(TiO 2 :Bi 2O3 ) xcomposites as well as, thin films which were deposited on glass substrates as well as, silicon wafers by using pulsed laser deposition. The diffraction pattern confirms the anatase teteragonal phase of undoped tin oxide. It was observed some peaks related with titanium and bismuth oxides appeared at high loading ratios. Upon the transmission-spectra analysis, the undoped samples declared transmittance 60–67% in a visible spectrum, and the energy ga
... Show MoreZinc Oxide (ZnO) is considered as one of the best materials already used as a window layer in solar cells due to its antireflective capability. The ZnO/MgF2 bilayer thin film is more efficient as antireflective coating. In this work, ZnO and ZnO/MgF2 thin films were deposited on glass substrate using pulsed laser deposition and thermal evaporation deposition methods. The optical measurements indicated that ZnO thin layer has an energy gap of (3.02 eV) while ZnO/MgF2 bilayer gives rise to an increase in the energy gap. ZnO/MgF2 bilayer shows a high energy gap (3.77 eV) with low reflectance (1.1-10 %) and refractive index (1.9) leading to high transmittance, this bilayer could be a good candidate optical material to improve the performance
... Show MoreIn this work a chemical sensor was built by using Plane Wave Expansion (PWE) modeling technique by filling the core of 1550 hollow core photonic crystal fiber with chloroform that has different concentrations after being diluted with distilled water. The minimum photonic bandgap width is.0003 and .0005 rad/sec with 19 and 7 cells respectively and a concentration of chloroform that filled these two fibers is 75%.
The Ge0.4Te0.6 alloy has been prepared. Thin films of Ge0.4Te0.6 has been prepared via a thermal evaporation method with 4000A thickness, and rate of deposition (4.2) A/sec at pressure 2x10-6 Torr. The A.C electrical conductivity of a-Ge0.4Te0.6 thin films has been studied as a function of frequency for annealing temperature within the range (423-623) K, the deduced exponent s values, was found to decrease with increasing of annealing temperature through the frequency of the range (102-106) Hz. It was found that, the correlated barrier hopping (CBH) is the dominant conduction mechanism. Values of dielectric constant ε1 and dielectric loss ε2 were found to decrease with frequency and increase with temperature. The activation energies have
... Show MoreChalcogenide glasses SeTe have been prepared from the high purity constituent elements .Thin films of SeTe compound have been deposited by thermal evaporation onto glass substrates for different values of film thickness . The effect of varying thickness on the value of the optical gap is reported . The resultant films were in amorphous nature . The transmittance spectra was measured for that films in the wavelength range (400-1100) nm . The energy gap for such films was determined .