The enhancement of ZnSe/Si Heterojunction by adding some elements (V, In and Cu) as impurities is the main goal because they contribute to the manufacturing of renewable energy equipment, such as solar cells. This paper describes the preparation of thin films ZnSe with V, In and Cu doped using thermal evaporation method with a vacuum of 10–5 Torr. The thin film was obtained from this work could be applied in heterojunction solar cell because of several advantages including high absorption coefficient value and direct band gap. The samples prepared on a glass and n-type Si wafer substrate. These films have been annealed for 1 h in 450 K. X-ray diffraction XRD results indicated that ZnSe thin film possesses poly-crystalline structure after

Determination of the proportion of selected metal elements (Fe, Mn, Co, Cu, Cr, Ni, Mo, Pb, Cd ) using a flame absorption spectroscopy device and the spectroscopy of Graphite furnace, and Phenols so as Free Radical (NO3-, NO2-) using ultraviolet spectroscopy device in the industrial wastewater of Al-Dura (A) and AlNajaf (B) refinery before and after entering the treatment units, taking into consideration the sampling time Varying (more than separated) and setting the temperature during the drawing of the model and conducting a statistical study of the results reached

The thermal properties (thermal transfer and thermal expansion coefficient) of the enhanced epoxy resin (MWCNT / x-TiO₂) were studied by weight ratios with the values (0%, 3%, 5%, 7% and 10%) and a constant ratio of 3% of MWCNT. The ultrasonic technology was used to prepare the neat and composites which were then poured into Teflon molds according to standard conditions. Thermo-analyzer sensor technology was used to measure thermal transfer (thermal conductivity, thermal flow, thermal diffusion, thermal energy and heat resistance). The thermal conductivity, flow, and thermal conductivity values were increased sequentially by increasing the weight ratio of the filler while the results of stored energy values an

TiO2 thin films were deposited by reactive d.c magnetron sputtering method on a glass substrate with various ratio of gas flow (Oxygen /Argon) (50/50, 100/50 and 150/50) at substrate temperature 573K. It can be observe that the optical energy gap of TiO2 thin films dependent on the ratio of gas flow (oxygen/argon), it varies between (3.45eV-3.57eV) also it is seen that the optical constants (α, n, K, εr and εi ) has been varied with the change of the ratio of gas flow (Oxygen /Argon).

in this paper, the current work was devoted to the manufacture of TiO2 nanoparticles doped with manganese,  synthesis by the sol-gel technique using a dip-conting device, for their hydrophilic properties and photocatalytic activity, and the products were characterized by X-ray diffraction, scanning electron microscopy, and Uv-Visible absorption, and the results  XRD showed an  phase Anatase  ,  and the results of the SEM Explained the shape of the morphology of the samples after the doping process compared with pure TiO2, and the results of a shift in light absorption from ultraviolet rays to visible light were evident. The results showed that the thin films have a high wettability   under visible rays

The buildup factor of cylindrical samples (shields) for Brass, Copper & lead (Brass, Cu, Pb (was studied, where buildup factor were calculated with thickness between (0-12) m.f.p. for Co60 and Cs137sources with activities (30) & (41) MBq respectively , using scintillation detector NaI(T?) with (3"×3")volume .The results shows increases of buildup factor for low atomic number(Z) samples where the energy of radiation source was constant, also shows increases of buildup factor with decreases the energy of radiation source. An empirical equation was obtained using Matlab7 program this equation have agreements with most obtained data for 96%.