Abstract

 This study investigated the optimization of wear behavior of AISI 4340 steel based on the Taguchi method under various testing conditions. In this paper, a neural network and the Taguchi design method have been implemented for minimizing the wear rate in 4340 steel. A back-propagation neural network (BPNN) was developed to predict the wear rate. In the development of a predictive model, wear parameters like sliding speed, applying load and sliding distance were considered as the input model variables of the AISI 4340 steel. An analysis of variance (ANOVA) was used to determine the significant parameter affecting the wear rate. Finally, the Taguchi approach was applied to determine

AlO-doped ZnO nanocrystalline thin films from with nano crystallite size in the range (19-15 nm) were fabricated by pulsed laser deposition technique. The reduction of crystallite size by increasing of doping ratio shift the bandgap to IR region the optical band gap decreases in a consistent manner, from 3.21to 2.1 eV by increasing AlO doping ratio from 0 to 7wt% but then returns to grow up to 3.21 eV by a further increase the doping ratio. The bandgap increment obtained for 9% AlO dopant concentration can be clarified in terms of the Burstein–Moss effect whereas the aluminum donor atom increased the carrier's concentration which in turn shifts the Fermi level and widened the bandgap (blue-shift). The engineering of the bandgap by low

This work analyzes the impact of MgO nanoparticles on the properties of an epoxy resin solution with uniform structure and particular degree of cure synthesized by the reaction of epoxy resin and pyromellitic dianhydride. Various concentrations of epoxy/MgO nanocomposites were fabricated by mechanical mixing, ultrasonication-based dispersion and casting processes. FTIR results have shown clear differences in the vibrations of C-H, epoxide rings, and main amine N-H groups. This confirms the interaction between MgO particles and the epoxy polymer matrix. X-ray diffraction analysis detected prominent peak at 18.35 degrees, along with additional ones at 43.44 degrees and 62.56 degrees, associated with the (200) and (220) planes of MgO crystal,

AlO-doped ZnO nanocrystalline thin films from with nano crystallite size in the range (19-15 nm) were fabricated by pulsed laser deposition technique. The reduction of crystallite size by increasing of doping ratio shift the bandgap to IR region the optical band gap decreases in a consistent manner, from 3.21to 2.1 eV by increasing AlO doping ratio from 0 to 7wt% but then returns to grow up to 3.21 eV by a further increase the doping ratio. The bandgap increment obtained for 9% AlO dopant concentration can be clarified in terms of the Burstein–Moss effect whereas the aluminum donor atom increased the carrier's concentration which in turn shifts the Fermi level and widened the bandgap (blue-shift). The engineering of the bandgap by

Compounds from ZnO doped with AgO in different ratio (0,3,5,7, and 9)wt.% were prepared.Thin films from the prepared compounds were deposited on a glass substrate using the pulsed laser deposition method. The XRD pattern confirmed the presence of a single-phase hexagonal wurtzite ZnO structure, without the presence of a secondary phase. AFM measurements showed an increase in both average grain size and average surface roughness with increasing concentration content of (AgO).The crystallite size of ZnO of the main peak corresponding to the preferred plane of crystal growth named (100) increases from 17.8 to 22.5nm by increasing of AgO doping ratio  from 0 to 9%. The absorbance and transmittance in the wavelength range (350-1100 nm)