A fully automatic electrothermal atomic emission spectrometry (ETA-AES) is described. This system is based on an echelle monochromator modified for wave¬length modulation which is completely controlled by microcomputer . The advantages of the system in atomic spectrometry have been discussed . Aspects of the analytical performances such as calibration ? dection limit, precision , and recovery for copper are considered . This system is applied for routine determination of copper in commercial powdered mill? by slurr>' atomization versus aqueous atomization techniques.

In the field of civil engineering, the adoption and use of Falling Weight Deflectometers (FWDs) is seen as a response to the ever changing and technology-driven world. Specifically, FWDs refer to devices that aid in evaluating the physical properties of a pavement. This paper has assessed the concepts of data processing, storage, and analysis via FWDs. The device has been found to play an important role in enabling the operators and field practitioners to understand vertical deflection responses upon subjecting pavements to impulse loads. In turn, the resultant data and its analysis outcomes lead to the backcalculation of the state of stiffness, with initial analyses of the deflection bowl occurring in conjunction with the measured or assum

A simplified theoretical comparison of the hydrogen chloride (HCl) and hydrogen fluoride (HF) chemical lasers is presented by using computer program. The program is able to predict quantitative variations of the laser characteristics as a function of rotational and vibrational quantum number. Lasing is assumed to occur in a Fabry-Perot cavity on vibration-rotation transitions between two vibrational levels of hypothetical diatomic molecule. This study include a comprehensive parametric analysis that indicates that the large rotational constant of HF laser in comparison with HCl laser makes it relatively easy to satisfy the partial inversion criterion. The results of this computer program proved their credibility when compared with th

Biofilm formation represents one of the biggest problems facing scientists because of this phenomenon linkage with virulence of bacteria and other clinical environmental problems. In the present study, two clinical isolates,
Escherichia coli, and Staphylococcus aureus were exposed to the non thermal plasma for different intervals of time (1, 2, 4, 8, and 16 min). The biofilm was measured post exposing. It was found that 2 min. exposing to non-thermal plasma reduced the biofilm formation by both clinical isolates significantly. It can be concluded that the ability of S. aureus to form biofilm higher than E. coli and exposing for 2 min to non-thermal plasma sufficient to reduce the biofilm formati

Non-thermal plasma(Dielectric barrier discharge) has many uses including living tissue sterilization, inactivation of the bacteria, excimer formation, angiogenesis, and surface treatment. This research aim is to use cold plasma as a tool to search the effect of the dielectric barrier discharge system at room temperature on human sperm motility and DNA integrity. This work was performed on 60 human semen samples suffering from low motility; each sample was prepared by centrifugation method, then each semen sample was divided into two sections, the first section is before significant exposure to the plasma system (DBD) and the second section is after treatment with the DBD system at ambient temperature. Before and after exposure to non-the

 Indium antimony (InSb) alloy were prepared successfully. The InSb films were prepared by flash thermal evaporation technique on glass and Si p-type substrate at various substrate temperatures (Ts= 423,448,473, and 498 K).       The compounds concentrations for prepared alloy were examined by using Atomic Absorption Spectroscopy (AAS) and X-ray fluorescence (XRF). The structure of prepared InSb alloy and films deposited at various Ts were examined by X-ray diffraction (XRD).It was found that all prepared InSb alloy and films were polycrystalline with (111) preferential direction .       The electrical properties of the films are studied with the varying Ts. It is found that

Porous silicon was prepared by using electrochemical etching process. The structure, electrical, and photoelectrical properties had been performed. Scanning Electron Microscope (SEM) observations of porous silicon layers were obtained before and after rapid thermal oxidation process. The rapid thermal oxidation process did not modify the morphology of porous layers. The unique observation was the pore size decreased after oxidation; pore number and shape were conserved. The wall size which separated between pore was increased after oxidation and that effected on charge transport mechanism of PS