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Publication Date
Sat May 01 2021
Journal Name
Journal Of Physics: Conference Series
Volume
1879
DOI
10.1088/1742-6596/1879/3/032073
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khaStIcBVTCNdQwCQFyi
Theoretical Estimation of Electronic Flow Rate at Al-TiO<sub>2</sub> Interfaces System
Hadi J M
Taif Saad Al
AbdulKareem A
Suad H
Mohsin A
Rajaa Faisel
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Abstract<p>The mechanism of the electronic flow rate at Al-TiO<sub>2</sub> interfaces system has been studied using the postulate of electronic quantum theory. The different structural of two materials lead to suggestion the continuum energy level for Al metal and TiO<sub>2</sub> semiconductor. The electronic flow rate at the Al-TiO2 complex has affected by transition energy, coupling strength and contact at the interface of two materials. The flow charge rate at Al-TiO2 is increased by increasing coupling strength and decreasing transition energy.</p>
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