In this research , pure Cadmium Oxide thin films were prepared by thermal evaporation Under vacuum method , where pure cadmium metal was deposited on glass Substrate in Room temperature (300K) at thickness (400 ± 30) nm with Deposition rate(1.1 ± 0.1) nm/sec And then we oxidize a pure cadmium Film in Temperature ( 350ºC ) for one hour with existence air flow. This research contained study of the influence of doping process by Tin metal (Sn) with two different ratios (1,3) % at substrate temperature (473K ) on the some structural properties of pure Cadmium oxide films . X-Ray diffraction pattern showed that all prepared films ( undoped and Sn doped ) are polycrystalline and of cubic kind with preferred orientation along [111] plane for all doped And undoped films , and the average grain size would Decrease with apparent shape when The ratio of Sn dopant increases until (43nm) at ratio (3%) , also this research included a study of the influence of Sn dopant with a mentioned ratios on the some optical properties of pure CdO films, such as calculation of the value of optical energy gap to allow direct transition, and studied and calculated the absorption coefficient . The optical investigation showed that all films prepared ( undoped and Sn doped) have Absorption coefficient with a value larger than (α >10 4 cm-1) and this value was increased when the increase of the ratios of Sn dopant specially in the low photon energy The optical energy gap was founded equal to (2.15 eV) for pure Cadmium Oxide film and it will decrease when the ratio of Sn dopant increases until (1.925 eV) For ratio (3%) .
In this work, we study the effect of doping Sn on the structural and optical properties of pure cadmium oxide films at different concentrations of Tin (Sn) (X=0.1,0.3 and 0.5) .The films prepared by using the laser-induced plasma at wavelength of laser 1064 nm and duration 9 ns under pressure reached to 2.5×10-2 mbar. The results of X-ray diffraction tests showed that the all prepared films are polycrystalline. As for the topography of the films surface, it was measured using AFM , where the results showed that the grain size increases with an increase in the percentage of doping in addition to an increase in the average roughness. The optical properties of all films have also been studied through the absorbance s
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The (NiTsPc) thin films operating by vacuum evaporation technique are high recital and good desirable for number of applications, were dumped on glass substrates at room temperature with (200±20nm) thickness and doped with Al at different percentage (0.01,0.03) besides annealing the sample with 200˚C for 1 hours . The stimuluses of aluminum dopant percentage on characterization of the dropped (Ni Ts Pc) thin films were studied through X-ray diffraction in addition from the attained results, were all the films have polycrystalline in nature, as well the fallouts of XRD aimed at film illustrations polycrystalline, depending on the Al ratio doping, the results, SEM exposed the surface is regularly homogeneous. Utilizing first-ideolog
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The structural, optical properties of copper oxide thin films ( CuO) thin films which have been prepared by thermal oxidation with exist air once and oxygen another have been studied. Structural analysis results of Cu thin films demonstrate that the single phase of Cu with high a crystalline structure with a preferred orientation (111). X-ray diffraction results confirm the formation of pure (CuO) phase in both methods of preparation. The optical constant are investigated and calculated such as absorption coefficient, refractive index, extinction coefficient and the dielectric constants for the wavelengths in the range (300-1100) nm.
In this research, the structural and optical properties were studied for Bi2O3 and Bi2O3: Al thin films with different doping ratios ( 1, 2, 3 ) % , which were prepared by thermal evaporation technique under vacuum , with thickness ( 450 ± 20 ) nm deposited on glass substrates at room temperature ( 300 ) K , Structural measurements by ( XRD) techniques demonstrated that all samples prepared have polycrystalline structure with tetragonal structure and a preferred orientation [ 201 ] the &n
... Show MoreThe fabricated Photodetector n-CdO /-Si factory thin films Altboukaraharara spatial silicon multi- crystallization of the type (n-Type) the deposition of a thin film of cadmium and at room temperature (300K) and thickness (300 ± 20nm) and the time of deposition (1.25sec) was antioxidant thin films cadmium (Cd) record temperature (673k) for one hour to the presence of air and calculated energy gap optical transitions electronic direct ( allowed ) a function of the absorption coefficient and permeability and reflectivity by recording the spectrum absorbance and permeability of the membrane record within the wavelengths (300 1100nm). was used several the bias ranged between 1-5 Volts. The results showed that this
... Show MoreIn this work, (CdO)1-x (CoO)x thin films were prepared on glass slides by laser-induced plasma using Nd:YAG laser with (λ=1064 nm) and duration (9 ns) at different laser energies (200-500 mJ) with ratio (x=0.5), The influence of laser energy on structural and optical properties has been studied. XRD patterns show the films have a structure of polycrystalline wurtzite. As for AFM tests results for the topography of the surface of the film, where the results showed that the grain size and the average roughness increase with increasing laser energy. The optical properties of all films were also studied and the results showed that the absorption coefficient for within the wavelength range (280-1100 nm), The value of the optical power gap fo
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Cadmium Oxide and Bi doped Cadmium Oxide thin films are prepared by using the chemical spray pyrolysis technique a glass substrate at a temperature of (400?C) with volumetric concentration (2,4)%. The thickness of all prepared films is about (400±20) nm. Transmittance and Absorbance spectra are recorded in the wave length ranged (400-800) nm. The nature of electronic transitions is determined, it is found out that these films have directly allowed transition with an optical energy gap of (2.37( eV for CdO and ) 2.59, 2.62) eV for (2% ,4%) Bi doped CdO respectively. The optical constants have been evaluated before and after doping.
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