Charge transfer (CT) at liquid/liquid interfaces are described theoretically depending on the quantum theory .A model that derived used to calculate the rate constant of transport at liquid/liquid interfaces. The calculation of the rate constant of charge transfer depends on the calculation of the reorganization energy, driving force ,and the coupling coefficient . Large reorganization energies and large rate constant for charge transfer ,indicate that the transitions involve more energy to happen . The system have large ð¸0 (ð‘’ð‘‰) refers that type of liquid is more reactive media than other liquid types with same donor. Driving force energy to drive the charge increases with the increase of absorption energy and decrease of in wave length. Height barrier at liquid/liquid interface that decreasing with decreasing the driving force energy and increasing the absorption energies .Charge transfer is so much small as a barrier of large values but in the low values of barrier ,the transfer is most probable. The large height barrier exclusion transfers across liquid/liquid system and the charger suffers from much resistant to transfer . However, this excluded transfer could be significantly large for high barrier and small concentrations .The theoretical values of rate constant of charge transfer show a good agreement with some of the experimental studies
A description of the theoretical of the reorganization energies have been described according to the outer-sphere Marcus model .It is a given expression according this model unable to evaluate the reorganization energy for electron transfer at liquid /liquid interface. The spherical model approach have been used to evaluate the radius of donor and acceptor liquid alternatively .Theoretical results of the reorganization free energy for electron transfer at liquid/liquid interface system was carried out . Matlap program is then used to calculate ð¸0 for electron transfer reaction between water donor stated and many liquid acceptor state. This shows a good agreement with the experiment. The results
... Show MoreThis investigation is a study of the length of time where drops can exist at an oil-water interface before coalescence take place with a bulk of the same phase as the drops. Many factors affecting the time of coalescence were studied in is investigation which included: dispersed phase flow rate, continuous phase height, hole size in distributor, density difference between phases, and viscosity ratio of oil/water systems, employing three liquid/liquid systems; kerosene/water, gasoil/water, and hexane/water. Higher value of coalescence time was 8.26 s at 0.7ml/ s flow rate, 30cm height and 7mm diameter of hole for gas oil/water system, and lower value was 0.5s at 0.3ml/s flow rate, 10 cm height and 3mm diameter of hole for hexane
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Liquid – liquid interface reaction is the method for
preparation nanoparticles (NP'S) which depend on the super
saturation of ions that provide by using the system that consist from
toluene and water, the first one is above the second to obtain
nanoparticles (NP's) CdS at the interface separated between these
two immiscible liquid. The structure properties were characterized by
XRD-diffraction and transmission electron microscopy.
The crystalline size estimate from X-ray diffraction pattern
using Scherer equation to be about 7nm,and by TEM analysis give us
that ananosize is about 5 nm which give a strong comparable with
Bohr radius. Photoluminescence analysis give two emission peak,
the first one around
(1)
(30)
(32)
Electron Transfer reaction rate constants at Semiconductor / Liquid interfaces are calculated dy using the Fermi Golden Rule for Semiconductor. The reorganization energy   eVï„ is computed for Semiconductor / Liquid Interfaces system in two solvents and compared with experimental value. The driving force (free energy) ΔGo(eV) is calculated depending on spectrum Ru(H2L`)2 (NCS)2 . The transfer is treated according with weak coupling (nonadiabatic) for two – state level between the Semiconductor and acceptor molecule state.
The plasma source can restrict the motion of charges that are localizing in the non equilibrium distribution of charge energy and reducing the electrons transport across magnetic field . The electrons & ions motion are controlled by ambipolar electric field and charge–atom collision . the source density for a given electron temperature and a given ion are considered to evaluate the diffusion coefficient . the ambipolar diffusion coefficient and the cross field diffusion coefficient for charge transfer are calculated through magnetized plasma in a uniform magnetic field , and an approximation ambipolar diffusion coefficient is evaluated. The result, showes how the diffusion process is gradually im
... Show MoreA quantum mechanical description of the dynamics of non-adiabatic electron transfer in metal/semiconductor interfaces can be achieved using simplified models of the system. For this system we can suppose two localized quantum states donor state |D› and acceptor state |A› respectively. Expression of rate constant of electron transfer for metal/semiconductor system derived upon quantum mechanical model and perturbation theory for transition between |ð·âŒª and |ð´âŒª state when the coupling matrix element coefficient is smaller than 0.025eV. The rate of electron transfer for Au/ ZnSe and Au/ZnS interface systems is evaluated with orientation free energy using a Matlap program. The
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