A quantum mechanical description of the dynamics of non-adiabatic electron transfer in metal/semiconductor interfaces can be achieved using simplified models of the system. For this system we can suppose two localized quantum states donor state |D› and acceptor state |A› respectively. Expression of rate constant of electron transfer for metal/semiconductor system derived upon quantum mechanical model and perturbation theory for transition between |ð·âŒª and |ð´âŒª state when the coupling matrix element coefficient is smaller than 0.025eV. The rate of electron transfer for Au/ ZnSe and Au/ZnS interface systems is evaluated with orientation free energy using a Matlap program. The results of the electron transfer rate constant are calculated for our modeas well as with experimental results
The coefficient of charge transfer at heterogeneous devices of Au metal with a well-known dyeis investigations using quantum model.Four different solvent are used to estimation the effective transition energy. The potential barrier at interface of Au and dye has been determined using effective transition energy and difference between the Fermi energy of Au metal and ionization energy of dye. A possible transfer mechanism cross the potential barrier dyeand coupling strength interaction between the electronic levels in systems of Au and is discussed.Differentdata of effective transition energy and potential barrier calculations suggest that solvent is more suitable to binds Au with dye.
Abstract We have been studied and analysis the electronic current at the interfaces of Au/PTCDA system according to simple quantum mode for the electronics transition rate due to postulate quantum theory. Calculation of electronic current were performed at interface of Au/PTCDA as well as for investigation the feature of electronic density at this devices. The transition of electronic current study under assume the electronic state of Au and PTCDA were continuum and the states of electrons must be closed to energy level for Au at Fermi state, and the potential at interface feature depended on structure of Au and PTCDA material. The electronic transition current feature was dependent on the driving force energy that results of absorption ene
... Show MoreSemiconductor quantum dots (QDs) have attracted tremendous attentions for their unique characteristics for solid-state lighting and thin-film display applications. A simple chemical method was used to synthesis quantum dots (QDs) of zinc sulfide (ZnS) with low cost. The XRD) shows cubic phase of the prepared ZnS with an average particles size of (3-29) nm. In UV-Vis. spectra observed a large blue shift over 38 nm. The band gaps energy (Eg) was 3.8 eV and 3.37eV from the absorption and photoluminescence (PL) respectively which larger than the Eg for bulk. QDs-LED hybrid devices were fabricated using ITO/ PEDOT: PSS/ Poly-TPD/ ZnS-QDs/ with different electron transport layers and cathode of LiF/Al layers. The EL spectrum reveals a bro
... Show MoreCharge transfer (CT) at liquid/liquid interfaces are described theoretically depending on the quantum theory .A model that derived used to calculate the rate constant of transport at liquid/liquid interfaces. The calculation of the rate constant of charge transfer depends on the calculation of the reorganization energy, driving force ,and the coupling coefficient . Large reorganization energies and large rate constant for charge transfer ,indicate that the transitions involve more energy to happen . The system have large ð¸0 (ð‘’ð‘‰) refers that type of liquid is more reactive media than other liquid types with same d
... Show MoreMetal nanoparticles can serve as an efficient nano-heat source with confinement photothermal effects. Thermo-plasmonic technology allows researchers to control the temperature at a nanoscale due to the possibility of precise light propagation. The response of opto-thermal generation of single gold-silica core-shell nanoparticle immersed in water and Poly-vinylpyrrolidone surrounding media is theoretically investigated. Two lasers (CW and fs pulses) at the plasmonic resonance (532 nm) are utilized. For this purpose, finite element method is used via COMSOL multiphysics to find a numerical computation of absorption cross section for the proposed core –shell NP in different media. Thermo-plasmonic response for both lasers is studied. The
... Show MoreThe mechanism of the electronic flow rate at Al-TiO2 interfaces system has been studied using the postulate of electronic quantum theory. The different structural of two materials lead to suggestion the continuum energy level for Al metal and TiO2 semiconductor. The electronic flow rate at the Al-TiO2 complex has affected by transition energy, coupling strength and contact at the interface of two materials. The flow charge rate at Al-TiO2 is increased by increasing coupling strength and decreasing transition energy.
« Dans la mesure où le texte théâtral est essentiellement non linéaire mais tabulaire, le personnage est un élément décisif de la verticalité du texte ; il est ce qui permet d’unifier la dispersion des signes simultanés. Le personnage figure alors dans l’espace textuel ce point de croisement ou plus exactement de rabattement du paradigme sur le syntagme : il est un lieu proprement poétique. Dans le domaine de la représentation, il apparaît ce point d’ancrage où s’unifie la diversité des signes »[1]
Quel est le personnage dans le théâtre ? Et comment est-il considéré dans le cadre de la sémiologie de théâtre ? Autour de ces deux quest
... Show MoreThe plasma source can restrict the motion of charges that are localizing in the non equilibrium distribution of charge energy and reducing the electrons transport across magnetic field . The electrons & ions motion are controlled by ambipolar electric field and charge–atom collision . the source density for a given electron temperature and a given ion are considered to evaluate the diffusion coefficient . the ambipolar diffusion coefficient and the cross field diffusion coefficient for charge transfer are calculated through magnetized plasma in a uniform magnetic field , and an approximation ambipolar diffusion coefficient is evaluated. The result, showes how the diffusion process is gradually im
... Show MoreIn this paper,we focus on the investigated and studied of transition rate in metal/organic semiconductor interface due to quantum postulate and continuum transition theory. A theoretical model has been used to estimate the transition rate cross the interface through estimation many parameters such that ;transition energy ,driving electronic energy U(eV) ,Potential barrier ,electronic coupling ,semiconductor volume ,density ,metal work function ,electronic affinity and temperature T. The transition energy is critical facter of charge transfer through the interfaces of metal organic films device and itscontrol of charge injection and transport cross interface. However,the potential at interfa
... Show MoreThe n-type Au thin films of 500nm thickness was evaporated by thermal evaporation method on p-type silicon wafer of [111] direction to formed Au/Si heterojunction solar cell. The AC conductivity, C-V and I-V characteristics of fabricated c-Au/Si diffusion heterojunction-(HJ) solar cell, has been studied. The first methods demonstrated that the AC conductivity due to with diffusiontunneling mechanism, while the second show that, the heterojunction profile is abrupt, the heterojunction parameters have been played out, such as the depletion width, built-in voltage, and concentration. And finally the third one show that the c-Au/Si HJ has rectification properties, and the solar cell yielded an open circuit voltage of (Vic) 0.4V, short circuit c
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