Some of structural ,and electrical properties of pure and zinc (Zn) doped cadmium telluride thin films with impurity percentages (0.5, 1, 1.5)%, deposited on hot glass substrate (temperature equals to 423K) of  thickness of 300nm and rate deposition of 0.5 nm.s-1  by thermal co-evaporation technique under vacuum of (2×10-5)Torr have been investigates. The structural properties for the prepared films were studied before and after. doping process by analysis of the X-ray diffraction, and it appeared that pure and dopant  CdTe thin films are polycrystalline and have the cubic structure with preferential orientation in the [111] direction, and the crystal structure of the films were improved due to doping process. From d.c.electrical conductivity in range of (291-495)K, we noticed that there are two activation energies Ea1 and Ea2, and their values decrease with the..increase.of.Zn.percentages,so..(σd.c.)..of..those..thin.films.increase . From Hall.effect. measurements we showed that the..(σd.c.).. for CdTe thin film is of n-type and converted to p-type when they adopted with Zn, and charge carrier concentration increases with the increase of Zn percentages, so Hall mobility (μH) decreases