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jih-1256
Temperature and Doping Dependencies Junction Of Polythiophene Schottky Barrier

 The junction between  polythiophene,  a conducting  polymer formed by  electrochemical polymerization,  and n-type silicon was  studied the temperature and doping dependencies were observed in the junction characteristics. The increase of junction  temperature leads to increase the saturation current, the barrier height, and decrease of the ideality factor for  junction. While the reduction in doping concentration causes a decrease  in the forward current. The results were  explained  according to the conventional  Schottky diode theories. 

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Publication Date
Wed Dec 30 2020
Journal Name
Iraqi Journal Of Science
The Potential Barrier and Thermal Stability Dependence on PI Thickness of Al/PI/c-Si Schottky Diode

This research investigated the effectiveness of using different thickness values of polyimide (PI) interfacial layer in order to improve electrical and thermal properties of Al/ PI /c-Si capacitor. The PI spectra produced by poly(amic acid) (PAA) were characterized by using FT-IR analysis. After imidization of PAA, some absorption peaks vanished, whereas PI peaks appeared, due to the complete conversion of PAA to PI.

    The results show that thermal decomposition resistance of polyimide films increases with the increase of polyimide thickness, because of the increase of the imide bond and the decrease of the average distance between amide groups.

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Publication Date
Tue Feb 12 2019
Journal Name
Iraqi Journal Of Physics
Effect of iodine doping on the characteristics of polythiophene thin films prepared by aerosol assisted plasma jet polymerization at atmospheric pressure

Iodine-doped polythiophene thin films are prepared by aerosol assisted plasma jet polymerization at atmospheric pressure and room temperature. The doping of iodine was carried out in situ by employing iodine crystals in thiophene monomer by weight mixing ratios of 1%, 3%, 5% and 7%. The chemical composition analyses of pure and iodine-doped and heat-treated polythiophene thin films are carried out by FTIR spectroscopy studies. The optical band gaps of the films are evaluated from absorption spectrum studies. Direct transition energy gaps are determined from Tauc plots. The structural changes of polythiophene upon doping and the reduction of optical band gap are explained on the basis of the results obtained from FTIR spectroscopy, UV–V

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Publication Date
Thu Apr 29 2021
Journal Name
Iraqi Journal Of Science
Capacitance and Resistivity Measurements of Polythiophene /Metallic Nanoparticles-based Humidity Sensors

Capacitive–resistive humidity sensors based on polythiophene (P3HT) organic semiconductor as an active material hybrid with three types of metallic nanoparticles (NP) (Ag, Al, and Cu) were synthesized by pulsed laser ablation (PLA). The hybrid P3HT/metallic nanoparticles were deposited on indium-tin-oxide (ITO) substrate at room temperature. The surface morphology of theses samples was studied by using field emission scanning electron micrographs (FE-SEM), which indicated the formation of nanoparticles with grain size of about 50nm. The electrical characteristics of the sensors were examined as a function of the relative humidity levels. The sensors showed an increase in the capacitance with variation in the humidity level.  While

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Publication Date
Mon Dec 30 2019
Journal Name
College Of Islamic Sciences
Issues Among the provisions of the use of the mosque and its dependencies

God Almighty set out to build mosques, and he commanded to seek their architecture, and the competition for them, and allocate them with types of worship that are not valid in others, and to preserve their sanctity and not to be degraded and taken for mundane purposes and special benefits, because they are considered one of the most prominent features of Islam and the rituals of Islamic society, so this research came to show the rule Sharia in various and contemporary issues that are needed by the imams of the mosques, their rulers, and those responsible for them. Among the issues in which they have examined comparative juristic research and reached the most correct opinion are:
Building mosques over or under buildings and factories i

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Publication Date
Wed Aug 09 2017
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
Influence of Simultaneous Doping of Tl on the Transition Temperature Tc and the Lattice Parameters of HgBa2Ca2Cu3O8+ δ Superconductors

        In the present study, we have reported investigations on the effect of simultaneous substitution of Tl at the Hg site in the oxygen deficient HgOδ layer of Hg1-xTlxBa2Ca2Cu3O8+ δ cuprate superconductor. Bulk polycrystalline samples were prepared by the two-step solid state reaction process. It was observed that the grown Hg1-xTlxBa2Ca2Cu3O8+ δ corresponds to the 1223 phase. Electrical resistivity, using four probe technique, is used to find the transition temperature Tc. The highest Tc(0ffset) were 108, 102,113, 118, 125 and 121K for Hg1xTlxBa2Ca2Cu3O8+ δ with x = 0.0, 0.05, 0.10, 0.15, 0.20 and 0.25 respectively. The optimum Tc(off) of ~ 125 K and Tc(onset) ~ 136K   was fo

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Publication Date
Mon Mar 08 2021
Journal Name
Baghdad Science Journal
The Effect of Grain Boundaries on Schottky Diode Parameters

The activation energy and optical band gap of different regions (p-type) polysilicon have been measured. Both microscopic studies and current-voltage characteristics of diodes prepared on different surface regions were carried out. Comparison of diodes parameters and microscopic studies indicate that the type of angles between boundaries has a significant effect on diodes parameters while the boundary lengths per unit area has less effect. The mechanism of Al-interaction with grain boundaries and their intersecting points at different temperature were also studies. The X-ray fluorescence spectrometry has been used for detection of diffused A1%.

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Publication Date
Sun Jun 01 2014
Journal Name
Baghdad Science Journal
Fabrication of multi-junction solar cells

Fabrication of solar cell prepared by thermal spray and vacuum thermal evaporation method on silicon wafer(n-type) and studying its efficiency. The film have been deposited on three layers(ZnO then CdS and CdTe) on Si and glass respectively.Direct energy gap was calculated and equal to (4.3,3.4,3)eV and indirect energy gap equal to (3.5,2.5,1.5)eV respectively . Efficiency was calculated for the cell of area 2cm2 it was equal to 0.14%.

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Publication Date
Fri Nov 29 2019
Journal Name
Iraqi Journal Of Physics
Synthesis and Characterization of P3HT Metal Nanoparticles Hybrid Junction

In this work the fabrication and characterization of poly(3-hexylthiophene) P3HT-metallic nanoparticles (Ag, Al). Pulsed Laser Ablation (PLA) technique was used to synthesis the nanoparticles in liquid. The Fourier Transformer Infrared (FTIR) for all samples indicate the chemical interaction between the polymer and the nanoparticles. Scanning Electron Microscopic (SEM) analysis showed the particle size for P3HT-AgNps samples between 44.50 nanometers as well the spherical structure. While for P3HT-AlNps samples was flakes shape. Energy Dispersive X-ray (EDX) spectra show the existing of amount of metallic nanoparticles.

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Publication Date
Thu Jan 01 2015
Journal Name
Progress In Electromagnetics Research C
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Publication Date
Thu Feb 10 2022
Journal Name
Iraqi Journal Of Science
Improving the efficiency of dye-sensitized solar cells with doping and co- doping titanium dioxide

In this work, A new strategy for enhancing the efficiency of dye sensitized solar cells (DSSC) by doping foreign ion and co- doping TiO2 / Fe and Cu (38 nm ) was prepared by sol-gel method and successfully used as a photoanode for (DSSC). The samples were characterized by using X-ray diffraction ( XRD) is used to calculate grain size, before and after Fe, Cu- doping and co- doping. Glass coating process with a thin layer on (Fluorine doped tin oxide) FTO glass by using doctor Blade technique .The optimum thickness utilized for TiO2 paste is (15μm) on a conductive glass. The best experimental results for doping and co- doping TiO2 with additive Copper (II) nitrate Cu (NO3)2 as improved it was VOC=0.6 V, ISC=1.92 mA, Imax=1.8 mA and Vmax=

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