In this paper, we introduce a new type of compactness which is called "ï¡-ccompactness". Also, we study some properties of this type of compactness and the relationships among it and compactness, ï¡-compactness and c-compactness
In this paper, we introduce weak and strong forms of ω-perfect mappings, namely the ï±-ω-perfect, weakly ï±-ω-perfect and stronglyï±-ω-perfect mappings. Also, we investigate the fundamental properties of these mappings. Finally, we focused on studying the relationship between weakly ï±-ω-perfect and stronglyï± -ω-perfect mappings.
The main purpose of this paper is to investigate some results. When h is ï‡ -(ï¬ ,δ) – Derivation on prime Γ-near-ring G and K is a nonzero semi-group ideal of G, then G is commutative .
The purpose of this work is to construct complete (k,n)-arcs in the projective 2-space PG(2,q) over Galois field GF(11) by adding some points of index zero to complete (k,n–1)arcs 3  n  11. A (k,n)-arcs is a set of k points no n + 1 of which are collinear. A (k,n)-arcs is complete if it is not contained in a (k + 1,n)-arc
In this paper, we introduce a new class of sets, namely , s*g-ï¡-open sets and we show that the family of all s*g-ï¡-open subsets of a topological space ) ,X( ï´ from a topology on X which is finer than ï´ . Also , we study the characterizations and basic properties of s*g-ï¡open sets and s*g-ï¡-closed sets . Moreover, we use these sets to define and study a new class of functions, namely , s*g- ï¡ -continuous functions and s*g- ï¡ -irresolute functions in topological spaces . Some properties of these functions have been studied .
In this paper, the concept of Jordan triple higher -homomorphisms on prime
rings is introduced. A result of Herstein is extended on this concept from the ring into the prime ring . We prove that every Jordan triple higher -homomorphism of ring into prime ring is either triple higher -homomorphism or triple higher -anti-homomorphism of into .
In this paper, we introduce the concepts of higher reverse left (resp.right) centralizer, Jordan higher reverse left (resp. right) centralizer, and Jordan triple higher reverse left (resp. right) centralizer of G-rings. We prove that every Jordan higher reverse left (resp. right) centralizer of a 2-torsion free prime G-ring M is a higher reverse left (resp. right) centralizer of M.
In this research we study the effect of UV radiation on pure PC samples and doped samples with plasticizer (DOP) for different exposure times (6, 12, 18, 24h). The study have been made on the change in the IR spectra causes by the UV radiation on both kinds of samples, besides the morphology changes were also studied by the optical microscope. From the results we conclude that the increasing of exposure causes the elaboration of CO2 and C2 gases.
In this paper, we generalize many earlier differential operators which were studied by other researchers using our differential operator. We also obtain a new subclass of starlike functions to utilize some interesting properties.
The reaction paths of the C-C and C-H bond cleavage in the anthracene and phenanthrene aromatic molecules are studied by applying the ab-initio DFT method. It is found that the C-C bond cleavage proceeds via a singlet aromatic transition state, compelled through a disrotatoric ring opening reaction. A suprafacial H atom shift follows the transition state, leading to the formation of a methylene -CH2 and an acetylenic or allenic moiety. The calculated activation energies for anthracene range from 158.81-208.90 kcal/mol and the reaction energies from 96.106-156.976 kcal/mol. For phenanthrene, the energy values are 157.39-202.34 kcal/mol and 62.639-182.423 kcal/mol, respectively. For the C-H cleavage reactions, the calculated reaction energies
... Show MoreHetero junctions are fabricated by depositing antimony (Sb) and Al films on n-type single crystal(c-Si) wafers by the method of vacuum evaporation with thickness (0.25µm), with rate of deposition equals to 2.77 Å/sec, all samples are annealed in a vacuum for one hour at 473K. The tests have shown that all the films have polycrystalline structure for all Sb films. The barrier heights in (Sb/c-Si) junction was found to be equal 0.825eV, but(Al/c-Si) junction ohmic contact. Current-voltage measurements confirm this behaviour.