In this work,   polynomials  and the finite q-exponential operator  are constructed. The operator  is used to combine an operator proof of the generating function with its extension, Mehler's formula with its extension and Roger's formula for the polynomials . The generating function with its extension,  Mehler's formula with its extension and Rogers formula for Al-Salam-Carlitz polynomials  are deduced by giving special values to polynomials .

This paper concentrates on employing the -difference equations approach to prove another generating function, extended generating function, Rogers formula and Mehler’s formula for the polynomials , as well as thegenerating functions of Srivastava-Agarwal type. Furthermore, we establish links between the homogeneous -difference equations and transformation formulas.

In this paper, we illustrate how to use the generalized homogeneous -shift operator  in generalizing various well-known q-identities, such as Hiene's transformation, the q-Gauss sum, and Jackson's transfor- mation. For the polynomials , we provide another formula for the generating function, the Rogers formula, and the bilinear generating function of the Srivastava-Agarwal type. In addition, we also generalize the extension of both the Askey-Wilson integral and the Andrews-Askey integral.

Human interferon as is the case in all kinds of interferon has complex effects but all share their impact on preventing the proliferation of viruses and preventing or reducing human Alantervjørn conversion occurs if the cell is in preventing the growth of the virus when interferon Balnmstqubl connects

The investigation of determining solutions for the Diophantine equation  over the Gaussian integer ring for the specific case of  is discussed. The discussion includes various preliminary results later used to build the resolvent theory of the Diophantine equation studied. Our findings show the existence of infinitely many solutions. Since the analytical method used here is based on simple algebraic properties, it can be easily generalized to study the behavior and the conditions for the existence of solutions to other Diophantine equations, allowing a deeper understanding, even when no general solution is known.

Abstract

In this work, the plasma parameters (electron temperature (T_e), electron density( n_e), plasma frequency (f_p) and Debye length (λ_D)) have been studied by using the spectrometer that collect the spectrum of Laser produce CdTe_(X):S_(1-X) plasma at X=0.5 with different energies. The results of electron temperature for CdTe range 0.758-0.768 eV also the electron density 3.648 10¹⁸ – 4.560 10¹⁸ cm^-3  have been measured under vacuum reaching 2.5 10^-2 mbar .Optical properties of CdTe:S were determined through the optical transmission method using ultraviolet visible spectrophotometer within the r

Interacting boson model version one has been used in the present

theoretical calculations. The energy levels & their transitions for dynamical  symmetry  0(6),  SU(3),  U(5),  ground-state  band,  Beta­ band, Gamma  band, B(E2), Ot, B(Ml), ,u,gt and  6(£2/Ml)have been  calculated  to  deduce  the  limit  of  Pt-198,  Z=78.  The  present results  confirmed  the  nuclear  behavior  of  this  isotope  lay  in  the

transitional region 0(6), SU(3) U(5). The calculations of 021 + & 022+

showed that the shape of this isotope is oblate according to Q21+  and pr

Ternary semiconductors AB5C8 (A = Cu/Ag, B = In and C = S, Se or Te) have been investigated. The CuIn5S8 and AgIn5S8 have been synthesize in cubic spinel structure with space group (Fd3m), whereas CuIn5Se8, AgIn5Se8, CuIn5Te8 and AgIn5Te8 have tetragonal structures with space group P-42m. The relaxed crystal geometry, electrical properties such as electronic band structure and optoelectronic properties are predicted by using full potential method in this work. For the determination of relaxed crystal geometry, the gradient approximation (PBE-GGA) is used. All the studied compounds are semiconductors based on their band structures in agreement with the experimental results, and their bulk moduli are in the range 35 to 69 GPa. Wide absorption

   3 BaTiO was prepared by mixing the components of 3 BaCO and 2 TiO by ratio [1:1] ØŒ This paper is devoted to study the effect of radition on the electrical properties of 3 BaTiO . Some of prepared samples were exposed to fast neutrons   SMeV and   MeV14 . In addition ØŒ Some samples were exposed to gamma – ray with dosage   Rad81.5 10 ï‚´ . The results showed that the exposition of some samples to fast neutrons    SMeV and   MeV14 lead to increase the electrical resistivity with the study of the effect of the addition of impurity on electrical resistivity . The addition of two compounds   2 3Yb O and   2 3Sm