A new family of distribution named Double-Exponential-X family is proposed. The proposed family is generated from the double exponential distribution. The forms of the probability densities and hazard functions of two distinct subfamilies of the proposed family are examined and reported. Generalproperties such as moment, survival, order statistics, probability weighted moments and quartile functions of the models are investigated. A sub family of the developed family of double –Exponential-X family of the distribution known as double-Exponential-Pareto distribution was used to fit a real life data on the use of antiretroviral drugs. Molecular simulation of efficacy of antiretroviral drugs is conducted to evaluate the performance of the

In this paper we prove the boundedness of the solutions and their derivatives of the second order ordinary differential equation x ?+f(x) x ?+g(x)=u(t), under certain conditions on f,g and u. Our results are generalization of those given in [1].

      The present paper concern with minimax shrinkage estimator technique in order to estimate Burr X distribution shape parameter, when prior information about the real shape obtainable as original estimate while known scale parameter.

 Derivation for Bias Ratio, Mean squared error and the Relative Efficiency equations.

 Numerical results and conclusions for the expressions mentioned above were displayed. Comparisons for proposed estimator with most recent works were made.

Thin films of GexS1-x were fabricated by thermal evaporating under vacuum of 10-5Toor on glass substrate. The effect of increasing of germanium content (x) in sulfide films on the electrical properties like d.c conductivity (σDC), concentration of charge carriers (nH) and the activation energy (Ea) and Hall effect were investigated. The measurements show that (Ea) increases with the increasing of germanium content from 0.1to0.2 while it get to reduces with further addition, while charge carrier density (nH) is found to decrease and increase respectively with germanium content. The results were explained in terms of creating and eliminating of states in the band gap

Thin films of ZnSxSe1-x with different sulfide content(x)
(0, 0.02, 0.04, 0.06, 0.8, and 0.1), thickness (t) (0.3, 0.5, and 0.7 μm) and annealing temperature (Ta) (R.T 373 and 423K) were fabricated by thermal evaporating under vacuum of 10-5 Toor on glass substrate. The results show that the increasing of sulfide content (x)and annealing temperature lead to decrease the d.c conductivity σDC of and concentration of charge carriers (nH) but increases the activation energy (Ea1,Ea2), while the increasing of t increases σDC and nH but decrease (Ea1,Ea2). The results were explained in different terms

Thin films of (Cu2S)100-x( SnS2 )x at X=[ 30,40, &50)]% with thickness (0.9±0.03)µm , had been prepared by chemical spray pyrolysis method on glass substrates at 573 K. These films were then annealed under low pressure of(10-2) mbar ,373)423&473)K for one hour . This research includes , studying the the optical properties of (Cu2S)100-x-(SnS2)x at X=[ 30,40, &50)]% .Moreover studying the effect of annealing on their optical properties , in order to fabricate films with high stability and transmittance that can be used in solar cells. The transmittance and absorbance spectra had been recorded in the wavelength range (310 - 1100) nm in order to study the optical properties . It was found that these films had direct optical band

A polycrystalline PbxS1-x alloys with various Pb content ( 0.54 and 0.55) has been prepared successfully. The structure and composition of alloys are determined by X-ray diffraction (XRD), atomic absorption spectroscopy (AAS) and X-ray fluorescence (XRF) respectively. The X-ray diffraction results shows that the structure is polycrystalline with cubic structure, and there are strong peaks at the direction (200) and (111), the grain size varies between 20 and 82 nm. From AAS and XRF result, the concentrations of Pb content for these alloys were determined. The results show high accuracy and very close to the theoretical values. A photoconductive detector as a bulk has been fabricated by taking pieces of prepared alloys and polished chemic

The study of properties of space of entire functions of several complex variables was initiated by Kamthan [4] using the topological properties of the space. We have introduced in this paper the sub-space of space of entire functions of several complex variables which is studied by Kamthan.

The effect of the annealing on the optical transmission , absorp tion coefficient,
dielectric constants (ε
r
),( ε
i
) ,Skin depth and the optical ener gy gap of (ZnO)x(CdO)1-x thin
films with (x=0.05) deposited on preheated glass substrates at a temperature of (450 C°) by
chemical pyrolysis technique were performed . These f ilms show direct allowed inter band
transition that influenced by annealing at ( 450 C°) for two hours . And it also found that the
optical ener gy gap has been increased fro m about (2.50 eV) before annealing to about (2.65
eV) after annealing , fro m the analysis of the absorp tion and transmission sp ectra in the
wavelength range (380-900nm) . The results show t

Alloys of InxSe1-x were prepared by quenching technique with
different In content (x=10, 20, 30, and 40). Thin films of these alloys
were prepared using thermal evaporation technique under vacuum of
10-5 mbar on glass, at room temperature R.T with different
thicknesses (t=300, 500 and 700 nm). The X–ray diffraction
measurement for bulk InxSe1-x showed that all alloys have
polycrystalline structures and the peaks for x=10 identical with Se,
while for x=20, 30 and 40 were identical with the Se and InSe
standard peaks. The diffraction patterns of InxSe1-x thin film show
that with low In content (x=10, and 20) samples have semi
crystalline structure, The increase of indium content to x=30
decreases degree o