RAPID THERMAL ANNEALING OF SILICON SOLAR CELL USINGINCOHERENT LIGHT SOURCE
ANNEALING
USINGINCOHERENT
The rapid thermal annealing (RTA) of single crystal silicon solar cell using the
radiation from a halogen lamp has been demonstrated. The electrical properties
under dark and illumination conditions followed by RTA are presented. The
maximum conversion efficiency and filling factor obtained after ٦٠٠oC/٢٠S RTA
were ١٣% and ٠.٧ respectively