A model of the sensor nanochip based on germanium/silicon heterostructures (Ge/Si-heterostructures) with Ge quantum dots is suggested. Two-Quasimolecule Spectrum: Infrared radiation can sense the formation of a single exciton quasimolecule. Optical transitions of this state to higher-lying SIE levels lead to the emission of radiation in the infrared part of the spectrum, with the energy of the emitting radiation being ∼70 meV and its normalized intensity ∼0.11. Such a unique type of infrared light can be considered as a strong signature in detection of single exciton quasimolecules in Ge/Si heterostructures. The sensor nanochip model to be proposed would should lay the foundation for both the fundamentals and applications, and the process could lead to the next generation of high-efficient sensor nanochip. Its successful fabrication would open a way for high performance exciton optoelectronic devices, highly sensitive, miniaturized, and CMOS-based infrared detectors for the biomedical, environmental and communication applications.
Sensor Nanochips Based on Single Exciton Quasimolecules
Spatially Indirect Excitons
Double Quantum Dots
Single Exciton
Quasimolecules
Sensor Nanochips