In the present article, Nano crystalline SnS and SnS:3% Bi thin films were fabricated using thermal
evaporation with 400±20 nm thickness at room temperature at a rate deposition rate of 0.5 ±0.01nm
/sec then annealing for one hour at 573 K for photovoltaic application. The prepared samples were
characterized in order to investigate the structural, electrical, morphological, and optical properties
using diverse techniques. XRD and SEM were recorded to investigate the effect of doping and
annealing on structural and morphological possessions, respectively. XRD showed an SnS phase
with polycrystalline and appeared to form an orthorhombic structure, with the distinguish trend
along the (111) grade,

Effect of the thermal annealing at 400oC for 2 hours and Argon laser radiation for half hour on the optical properties of AgAlS2 thin films, prepared on glass slides by chemical spray pyrolysis at 360oC with (0.18±0.05) μm thickness .The optical characteristics of the prepared thin films have been investigated by UV/Vis spectrophotometer in the wavelength range (300 – 1100)nm .The films have a direct allow electronic transition with optical energy (Eg) values decreased from (2.25) eV for untreated thin films to (2.10) eV for the annealed films and to (2.00) eV for the radiated films. The maximum value of the refractive index (n) for all thin films are given about (2.6). Also the extinction coefficient (K) and the real and imaginary d

In this work Nano crystalline (Cu2S) thin films pure and doped 3% Al with a thickness of 400±20 nm was precipitated by thermic steaming technicality on glass substrate beneath a vacuum of ~ 2 × 10− 6 mbar at R.T to survey the influence of doping and annealing after doping at 573 K for one hour on its structural, electrical and visual properties. Structural properties of these movies are attainment using X-ray variation (XRD) which showed Cu2S phase with polycrystalline in nature and forming hexagonal temple ,with the distinguish trend along the (220) grade, varying crystallites size from (42.1-62.06) nm after doping and annealing. AFM investigations of these films show that increase average grain size from 105.05 nm to 146.54 nm

Crystalline In2O3 Thin films have been prepared by flash evaporation. We have studied the crystal structure of as deposited at 303K and annealed at 523K using X-ray diffraction. The Hall Effect measurements confirmed that electrons were predominant charges in the conduction process (i.e n-type).It is found that the absorption coefficient of the prepared films decreases with increasing Ta. The d.c conductivity study showed that the conductivity increase with increasing Ta , whereas the activation energy decreases with increasing Ta. Also we study the barrier tunneling diode for In2O3/Si heterostructure grown by Flash evaporation technique. (capacitance-voltage C-V) spectroscopy measurements were performed at 303 K and at the annealing temper

In this research thin films from SnO2 semiconductor have been prepared by using chemical pyrolysis spray method from solution SnCl2.2H2O at 0.125M concentration on glass at substrate temperature (723K ).Annealing was preformed for prepared thin film at (823K) temperature. The structural and sensing properties of SnO2 thin films for CO2 gas was studied before and after annealing ,as well as we studied the effect temperature annealing on grain size for prepared thin films .

A standard theoretical neutron energy flux distribution is achieved for the triton-triton nuclear fusion reaction in the range of triton energy about ≤10 MeV. This distribution give raises an evidence to provide the global calculations including the characteristics fusion parameters governing the T-T fusion reaction.

     In this study, the electron energy distribution function (EEDF), the electron swarm parameters , the effective ionization coefficients, and the critical field strength (dielectric strength) in binary He-H₂ gas mixture which is used as cryogenic for high-temperature superconducting power applications,  are evaluated using two-term solution  of the Boltzmann equation over the range of E/N ( the electric field to gas density) from 1 to 100 Td ( 1 Td=10^-17 Vcm²) at temperature 77 K and pressure 2MPa, taking into account elastic ( momentum transfer) and inelastic cross-sections. Using the electron energy distribution function (EEDF) electron swarm parameters (electron drift velocity, mean electron e

Aim: to determine the effectiveness of women's self-care instructions on their post cesarean section care in Baghdad
teaching hospital.
Methodology: The present study used quasi-experimental study design in maternity words in Baghdad teaching
hospital. The sample was collected and follow up for the period (15) January 2014 until 15 May 2014 Nonprobability
(purposive sample) of (100) women post cesarean section divided in to two groups (50) women post
cesarean section considered as a study group, and another (50) women post cesarean section considered as the
control one, A questionnaire designed as a tool to collect data fit the purpose of the study a questionnaire include
demographic variables, Reproductive variables

Simplifying formulas that are used for calculations and design are the aim of researchers. For present work, the approach to distinguish the flow under sluice gate was conducted in a laboratory. The extensive experimental program was done to collect fifty-four data points for both free and submerged flow conditions. The data included different discharges, gate openings, flow depths at upstream as well as the flow depths represent a tail water and at a contracted section for downstream. The collected data are analyzed according to a problematic that may encounter in the field, to present a more straightforward (but with acceptable accurate) practical features equations and charts. Based on the proposed formulas, five meth