At the time when many important political events and evolutions took place, the cinema has been pretty active, and witnessed the historical events before and after the two world wars and the cold war. During the first half of the 20th century, the cinema had great interest from the major countries and their politicians, as well as the commercial turnout of large companies to invest in that field for the profits. In the beginning of the 20th century, the major powers like the Soviet Union, the United States, Germany, Italy, England, and France started to compete in the development of their film industry and the investment of the new medium and the transformation of some famous works of fiction into films that perpetuate their cultural and intellectual heritage, But it went beyond the creative, literary and artistic aspects of the film industry when these countries began to have direct control and provide government support to their film companies to encourage them to produce films dealing with issues that are consistent with the nature of the stage and political trends prevailing in the meantime. Going back to the 20s and 30s of the 20th century, we can find several statements by politicians such as Lenin, Mussolini, Hitler and Goebbels persisting on the importance of cinema and control of its industry, and to point out to the danger of the emerging means in the fields of politics, propaganda and media.
دور المواد النانوية في إعادة تصنيف تكاليف المنتج الصناعي الحديث
تعد الجامعات من أهم المؤسسات المجتمعية التي تؤثر وتتأثر بالجو الاجتماعي المحيط بها، فهي من صنع المجتمع من ناحية، ومن ناحية أخرى هي أداته في صنع قياداته السياسية، الفكرية، الفنية، والمهنية، ومن هنا كان لكل جامعة رسالتها التي تتولى تحقيقها، فالجامعة في القرن العشرين تختلف رسالتها وغايتها عن الجامعة في القرن الحادي والعشرين. ولكي تقوم الجامعة بدور أفضل في خدمة المجتمع وتحمل المسؤولية المجتمعية فلابد لها من وض
... Show MoreAn indirectly method is used to determine hydrogen peroxide. The method based on oxidation of chromium (III) ion by hydrogen peroxide in basic medium to form chromate ion which react with barium (II) ion to produce a yellow precipitate (BaCrO4). Under the optimum established conditions, the linear range of 0.50-25.00 mmol L-1 along with correlation coefficient (r) of 0.9992, Limit of detection (LOD) 0.68 μg / 100 μL, precision expressed as relative standard deviation for six replication measurements at 5.0 mmol.L-1 H2O2 of less than 2% were obtained for hydrogen peroxide. The developed method was successfully applied for the estimation of H2O2 in three pharmaceuticals preparation of different companies using continuous flow injection o
... Show More: Porous silicon (n-PS) films can be prepared by photoelectochemical etching (PECE) Silicon chips n - types with 15 (mA /cm2), in15 minutes etching time on the fabrication nano-sized pore arrangement. By using X-ray diffraction measurement and atomic power microscopy characteristics (AFM), PS was investigated. It was also evaluated the crystallites size from (XRD) for the PS nanoscale. The atomic force microscopy confirmed the nano-metric size chemical fictionalization through the electrochemical etching that was shown on the PS surface chemical composition. The atomic power microscopy checks showed the roughness of the silicon surface. It is also notified (TiO2) preparation nano-particles that were prepared by pulse laser eradication in e
... Show MoreSilver sulfide and the thin films Ag2Se0.8Te0.2 and Ag2Se0.8S0.2 created by the thermal evaporation process on glass with a thickness of 350 nm were examined for their structural and optical properties. These films were made at a temperature of 300 K. According to the X-ray diffraction investigation, the films are polycrystalline and have an initial orthorhombic phase. Using X-ray diffraction research, the crystallization orientations of Ag2Se and Ag2Se0.8Te0.2 & Ag2Se0.8S0.2 (23.304, 49.91) were discovered (XRD). As (Ag2Se and Ag2Se0.8Te0.2 & Ag2Se0.8S0.2) absorption coefficient fell from (470-774) nm, the optical band gap increased (2.15 & 2 & 2.25eV). For instance, the characteristics of thin films made of Ag2Se0.8Te0.2 and Ag2Se0.8S0.2
... Show MoreSilver sulfide and the thin films Ag2Se0.8Te0.2 and Ag2Se0.8S0.2 created by the thermal evaporation process on glass with a thickness of 350 nm were examined for their structural and optical properties. These films were made at a temperature of 300 K. According to the X-ray diffraction investigation, the films are polycrystalline and have an initial orthorhombic phase. Using X-ray diffraction research, the crystallization orientations of Ag2Se and Ag2Se0.8Te0.2 & Ag2Se0.8S0.2 (23.304, 49.91) were discovered (XRD). As (Ag2Se and Ag2Se0.8Te0.2 & Ag2Se0.8S0.2) absorption coefficient fell from (470-774) nm, the optical band gap increased (2.15 & 2 & 2.25eV). For instance, the characteristics of thin films made of Ag2Se0.8Te0.2 and Ag2Se0.8S0.2
... Show MoreAbstract : Tin oxide SnO2 films were prepared by atmospheric chemical vapor deposition (APCVD) technique. Our study focus on prepare SnO2 films by using capillary tube as deposition nozzle and the effect of these tubes on the structural properties and optical properties of the prepared samples. X-ray diffraction (XRD) was employed to find the crystallite size. (XRD) studies show that the structure of a thin films changes from polycrystalline to amorphous by increasing the number of capillary tubes used in sample preparation. Maximum transmission can be measured is (95%) at three capillary tube. (AFM) where use to analyze the morphology of the tin oxides surface. Roughness and average grain size for different number of capillary tubes have b
... Show MoreABSTRACT: Thin film of CdS has been deposited onto clean glass substrate by using Spray pyrolysis technique. Results of Morphological (AFM) studied; electrical properties and optical conductivity studied are analysis. AFM results show a crystalline nature of the films. From the conductivity measurement at different temperatures, the activation energy of the films was calculated and found to be between 0.188 - 0.124 eV for low temperature regions, and between 1.67-1.19eV for high temperature regions. Hall measurements of electrical properties at room temperature show that the resistivity and mobility of CdS polycrystalline films deposited at 400 C0, were 3.878x103 . cm and 1.302x104cm2/ (V.s), respectively. The electrical conductivity of th
... Show MoreAbstract. Silver, Indium Selenium thin film with a thickness (5001±30) nm, deposited by thermal evaporation methods at RT and annealing3temperature (Ta=400, 500 and 600) K on a substrate of glass to study structural and optical properties of thin films and on p-Si wafer to fabricate the AgInSe2/p-Si heterojunction solar cell. XRD analysis shows that the AgInSe2 (AIS) deposited film at RT and annealing3temperature (Ta=400, 500 and 600) K have polycrystalline structure. The average grain size has been estimated from AFM images. The energy gap was estimated from the optical transmittance using a spectrometer type (UV.-Visible 1800 spectra photometer). From I-V characterization , the photovoltaic parameters such as, open-circuit voltage, short
... Show MoreThis research investigates modern linguistics in terms of the “universality” concept, through which linguistics shifted its attention from the description of the phenomenon into finding an interpretation of it. Then it investigates what needs interpretation in the language